2SB TRANSISTOR Search Results

Transistors

Abstract: Bipolar Transistors 2SC SERIES TRANSISTORS
Contextual Info: Bipolar transistors-2SB series Bipolar transistors-2SB series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and

Bipolar Transistors

Contextual Info: Bipolar transistors-2SB series Bipolar transistors-2SB series The series name of ROHM’s bipolar transistors is used to classify these products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series In addition to these series, there are similar transistors that are manufactured to the US and

B1335A

Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Contextual Info: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033

Contextual Info: 2SB1130AM/2SB1236A h 7 > y 7 i i / I ransistors 2SB 1130AM 2SB1236A PNP y ' J - ¡ > Epitaxial Planar PNP Silicon Transistors 't'ii^ jiite ffl/M e d iu m Power Amp. • \Ü £ |3 |/D im e n s io n s Unit : mm 2SB 1236A 2SB 1130A M BV c e o = — 160V 6.8± 0.2

2SB1178

Abstract: 2SB1178A 2SD1748 2SD1748A
Contextual Info: Power Transistors 2SB 1178, 2SB 1178A 2SB1178, 2SB1178A P ackage Dim ensions U nit ! mm Silicon PNP Epitaxial Planar Darlington Type 3.7m ax. S 1 7 3max. ^ 1 3.2m ax. A F Power Am plifier ' C om plem entary Pair with 2 S D 1 7 4 8 , 2 S D 1 7 4 8 A 0.9 ± 0 .1

Contextual Info: m V J - v ~ - : v . ‘ : - . « w j : ^ ' : - : :*t o i i *-• - > - ^r: >: OWE RANSISTOR PNP DARLINGTON POWER TRANSISTORS Absolute M axim um Ratings Type No. Pc W Vcbo Vceo (V) (V) 2SB 1257 25 -60 -60 -6 2SB 1258 30 -100 -100 -6 V ebo (V) lc (A) Electrical Characteristics at TA = 25°C

B1307M

Abstract: j 6810 J 6810 D 2SB1306 b1306 1307M 2SB1307 2SB1307M sb1306 B-1306
Contextual Info: /Transistors 2SB1306/2SB1307M/2SB1326 2S B 1306/2S B 1307M 2SB 1326 Epitaxial Planar PNP Silicon Transistors Freq. Power Amp. • • « Ä 1 VCE sat| £ ( - 7 fi\n i@ 2SB1306 /D im e n s io n s 5.a±0.2 ( U n it: m m ) 2SB 1307M 4.810.? V cE (sa t)= —0.35V (Typ.)

2SB1372

Abstract: 2SD2065
Contextual Info: Power Transistors 2SB 13 7 2 2SB 1372 Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions High Pow er Amplifier C om plem entary Pair with 2 S D 2 0 6 5 U nit : ram • Features o r • V ery g o o d lin e a rity of DC c u r r e n t gain I i f e

transistor B502

Abstract: 2SD1760 2SB11
Contextual Info: Transistors Power Transistor 50V, 3A 2 S 1 7 6 0 / 2 S D D 1 8 6 4 / 2 S •F e a tu re s 1) 1 7 6 2 D •E x te rn a l dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0 .5 V (Ic / I b (Typ.) = 2A/0.2A) 2) Complements the 2SB11 8 4 /2SB 1243/2SB 1185. 2SD1760

2SB821

Abstract: 2SB1276
Contextual Info: Z $ / T ransistors K "7 > V 2SB821 2SB 1276 2SB821 /2SB 1276 x t : $ * ÿ 7 J l ' 7 ° l s - i - B P N P ' j 3 > fit rbb' f é ^ f f ^ ' l i f f l / L o w rbb' Low Noise Am p. Epitaxial Planar PN P Silicon Transistors • # 1 f l f i S * T * * y S SI / Di men si o ns Unit : mm)

2SB1301

Abstract: MARKING Z.R 2SD1952 marking zr IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR 2S B 1301 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SB 1301 is designed for audio frequency pow er am plifier and switching application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

MEI-1202

Abstract: 2SB800 2SD1001 IEI-1213 MF-1134 TC-5473B marking lp nec sot89
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB 800 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

Contextual Info: 2SB1183 / 2SB1239 / 2SB786F 2SD1759 / 2SD1861 / 2SD947F Transistors Power Transistor —40V, —2A 2SB 1183 / 2SB1239 / 2SB786F ^Absolute maximum ratings (Ta=25^C) 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kO resistor between base and emitter.

IEI-1213

Abstract: MF-1134 MEI-1202 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB799 ml 1134 2SD1000 quality assurance for semiconductor devices NEC IR SOT89 transistor marking MK
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB799 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB 799 is designed fo r audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

d2400a

Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
Contextual Info: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s

2sd1763

Contextual Info: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)

TPCP8L01

Abstract: TPCP8L NPN Darlington HED
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TPCP8L01 Category: Transistors /Bipolar Power Transistors/Low-Frequency Power Transistors 2SB Series,2SD Series

transistors 2SA

Abstract: 1782K 2SA series 2SA1807 2SD1834
Contextual Info: Bipolar transistors-2SA series Bipolar transistors-2SA series The series name for RO H M ’s bipolar transistors is used to classify the products as follows: PNP 2SA series 2SB series NPN 2SC series 2SD series These transistors are available in the following packages:

2SB1254

Abstract: 2SD1894 high current Darlington pair IC Darlington pair IC
Contextual Info: Power Transistors 2SB 1254 Package Dimensions Unit : mm Silicon PNP Epitaxial Planar Darlington Type Power Amplifier Complementary Pair with 2S D 1894 1 5.5m ax. 5 2m ax. - s3 .2 • Features • Optimum for 60W hi-fi output • High DC current gain hpE

2SB1233

Abstract: 2SB1233A
Contextual Info: Power Transistors 2 SB 1233 , 2 SB 1233 A 2SB 1233, 2SB1233A Silicon PNP Epitaxial Planar Type Package Dimensions P&wer Amplifier Unit : mm • Features • High co llector-em itter voltage 3.7max. 7.3max. V ceo 0.9 ± 0 . 1 O.Smax.- • Wide area of safety operation (ASO)

2n3055 npn transistor toshiba

Abstract: TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp
Contextual Info: 2. Id e n tific a tio n System 2.1 A C) Transistors EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2SC 4289 A 1st 2nd 3rd ST100Q22 SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2SA PNP high-frequency use 2SB PNP low-frequency use

A-263A

Abstract: 2SB1194 2SD1633
Contextual Info: 2SB 1194 Power Transistors 2SB1194 Silicon PNP Epitaxial Planar Darlington Type Power Switching Complementary Pair with 2SD 1633 Package Dimensions Unit • mm 4.4max. .lQ.Zmax., 5.7max. 2.9max • Features • • • • High speed switching Good linearity of DC current gain I i f e

TOSHIBA 2N3055

Abstract: Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA 2N3055 ST transistors 2SA pnp vhf transistor ST100Q22 HF VHF power amplifier module transistor bf422 fet
Contextual Info: 2.1 A Transistors C) EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2 SC 780 1st 2nd ST100Q22 3rd SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2.2 (Example) T ype 2SA PNP high-frequency use 2SB PNP low -frequency use

B904

Abstract: D1213 2SB904 D152 2SD121
Contextual Info: Ordering number ¡EN1022A 2SB 904/2SD 1213 PNP/NPN Epitaxial Planar Silicon Transistors 30V/20A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =~0-5V{PNP), 0.4(NPN) max.