Untitled
Abstract: No abstract text available
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SA950
2SC2120
SC-43
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2SA950
Abstract: 2SC2120 2SA950 Y
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SA950
2SC2120
SC-43
2SA950
2SC2120
2SA950 Y
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2SA950
Abstract: 2SC2120
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SA950
2SC2120
SC-43
2SA950
2SC2120
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Untitled
Abstract: No abstract text available
Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SA950
2SC2120
SC-43
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2SA950
Abstract: 2SA950 Y
Text: 2SA950 2SA950 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: 3. BASE 1 2 3
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2SA950
-100mA
-700mA
-500mA,
-20mA
-10mA,
2SA950
2SA950 Y
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating
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2SA950-O
2SA950-Y
2SC2120
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2SA950Y
Abstract: 2SA950-Y 2SA950
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating
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2SA950-O
2SA950-Y
2SC2120
2SA950Y
2SA950-Y
2SA950
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2SA950
Abstract: 2SA950 PNP
Text: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SA950
700mA
500mA,
2SA950
2SA950 PNP
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol
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2SA950
2SC2120
-10mA
-100mA
-700mA
-500mA,
-20mA
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2SA950 PNP
Abstract: 2SA950 2SC2120 35VCEO
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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2SA950
2SC2120
-100mA
-700mA
-500mA,
-20mA
-10mA
2SA950 PNP
2SA950
2SC2120
35VCEO
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2SA950
Abstract: No abstract text available
Text: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SA950
700mA
500mA,
2SA950
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2SA950
Abstract: No abstract text available
Text: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SA950
700mA
500mA,
2SA950
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2SA950
Abstract: 2SA950 PNP
Text: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SA950
500mA,
2SA950
2SA950 PNP
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2SC2120
Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SC2120
2SA950
2SC2120
2SA950
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2SA950
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. 2SA950 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low-frequency power amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base
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2SA950
-500mA,
-20mA
-100mA,
-10mA,
2SA950
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2SA950
Abstract: 2SC2120
Text: 2SA950 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA950 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • B 級プッシュプルで 1 W の出力が得られます。 • 2SC2120 とコンプリメンタリになります。
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2SA950
2SC2120
SC-43
2SA950
2SC2120
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2SC2120
Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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2SC2120
2SA950
SC-43
2SC2120
2SA950
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2SC2120
Abstract: 2SA950
Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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2SC2120
2SA950
SC-43
2SC2120
2SA950
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2SC2120-0
Abstract: 2SA950 2SC2120
Text: TO SH IBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • . 5.1 MAX. High hpE • hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C)
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2SA950
2SC2120
SC-43
2SC2120-0
2SA950
2SC2120
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2SA950
Abstract: 2SC2120
Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)
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2SA950
2SC2120
SC-43
2SA950
2SC2120
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)
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2SA950
2SC2120
SC-43
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Untitled
Abstract: No abstract text available
Text: •€> P e FORWARD INTERNATIONAL ELECTRONICS LTD. 2SA950 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * Complement To2SC212Q * Collector Current Ic=-800mA ABSOLUTE MAXIMUM RATINGS at Tanfc=25°C Characteristic
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2SA950
To2SC212Q
-800mA
-100uA
-100mA
-500mA
500mA
-20mA
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ta8529f
Abstract: TA8528 toshiba mcp
Text: TOSHIBA TA8529F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP PACKAGE TA8529F Stepping Motor Driver 1C TA8528 + 2SA950 X 4 MCP TA8529F is a stepping motor driver 1C which operates based on bipolar transistors. The device incorporates stepping motor driver 1C TA8528
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TA8529F
TA8528
2SA950
TA8529F
TA8528
100mA
400mA
toshiba mcp
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Untitled
Abstract: No abstract text available
Text: FORWARD INTIRNATONAL ELECTRONICS LID . 2SC2120 SEMICONDUCTOR "" TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY A M PLIFIER H IG H FREQUENCY OSC. Package: TO-92 * Complement to 2SA950 * Collector-Emitter Voltage VCEO=30V C haracteristic Symbol R ating
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2SC2120
2SA950
100uA
100mA
500mA
500mA
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