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    2SA950 PNP Search Results

    2SA950 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2SA950 PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA952L

    Abstract: 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 >= 2N6009 BC328•16 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 20 2SA950 2SA950 2SA950 2SB811F 2SB1030 BC178C BC258C KSA542 ~~~~~B 25 30 2SA952K 2SB810E BC328·25 BC328CP KSB564A 2SB811E


    Original     		2N6009 BC328 BC328BP 2SA952L 2SB810H 2SB811H 2SBll19S 2SBl121S BC178BP BC178PBK 2SA952K diode GP 30M 2SA666 2N330A HA7815 sot89 diode bm LOW-POWER SILICON PNP 2SA952-L G20b PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		2SA950 2SC2120 SC-43 PDF

    2SA950

    Abstract: 2SC2120 2SA950 Y
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		2SA950 2SC2120 SC-43 2SA950 2SC2120 2SA950 Y PDF

    2SA950

    Abstract: 2SC2120
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SA950 2SC2120 SC-43 2SA950 2SC2120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SA950 2SC2120 SC-43 PDF

    2SA950

    Abstract: 2SA950 Y
    Text: 2SA950 2SA950 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: 3. BASE 1 2 3


    Original     		2SA950 -100mA -700mA -500mA, -20mA -10mA, 2SA950 2SA950 Y PDF

    2SA950

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SA950 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low-frequency power amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base


    Original     		2SA950 -500mA, -20mA -100mA, -10mA, 2SA950 PDF

    2SA950

    Abstract: 2SA950 PNP
    Text: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SA950 700mA 500mA, 2SA950 2SA950 PNP PDF

    2SC1815 NPN SOT-23

    Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
    Text: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213


    Original     		2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol


    Original     		2SA950 2SC2120 -10mA -100mA -700mA -500mA, -20mA PDF

    2SA950

    Abstract: 2sa950y 2SA950-Y 2sc212 2SA950 PNP 2SA950-O 2SC2120
    Text: 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   1W output applications Complementary to 2SC2120 G H Emitter Collector Base


    Original     		2SA950 2SC2120 2SA950-O 2SA950-Y 14-Feb-2011 -10mA, -100mA -700mA -500mA, -20mA 2SA950 2sa950y 2SA950-Y 2sc212 2SA950 PNP 2SA950-O 2SC2120 PDF

    2SA950 PNP

    Abstract: 2SA950 2SC2120 35VCEO
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		2SA950 2SC2120 -100mA -700mA -500mA, -20mA -10mA 2SA950 PNP 2SA950 2SC2120 35VCEO PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating


    Original     		2SA950-O 2SA950-Y 2SC2120 PDF

    2SA950

    Abstract: No abstract text available
    Text: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SA950 700mA 500mA, 2SA950 PDF

    2SA950Y

    Abstract: 2SA950-Y 2SA950
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating


    Original     		2SA950-O 2SA950-Y 2SC2120 2SA950Y 2SA950-Y 2SA950 PDF

    2SA950

    Abstract: 2SA950 PNP
    Text: ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SA950 500mA, 2SA950 2SA950 PNP PDF

    transistors 2SA950

    Abstract: 2SA950
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURE Power dissipation 1. EMITTER PCM : 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.8 Collector-base voltage V(BR)CBO : -35 V


    Original     		2SA950 -100mA -700mA -500mA, -20mA -10mA, transistors 2SA950 2SA950 PDF

    2SA950

    Abstract: 2SC2120
    Text: 2SA950 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage


    Original     		2SA950 2SC2120 -700mA -500mA, -20mA -10mA -10mA -100mA PDF

    2SA950

    Abstract: 2SC2120
    Text: 2SA950 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA950 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • B 級プッシュプルで 1 W の出力が得られます。 • 2SC2120 とコンプリメンタリになります。


    Original     		2SA950 2SC2120 SC-43 2SA950 2SC2120 PDF

    2SC2120-0

    Abstract: 2SA950 2SC2120
    Text: TO SH IBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • . 5.1 MAX. High hpE • hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SA950 2SC2120 SC-43 2SC2120-0 2SA950 2SC2120 PDF

    2SA950

    Abstract: 2SC2120
    Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SA950 2SC2120 SC-43 2SA950 2SC2120 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SA950 2SC2120 SC-43 PDF

    Untitled

    Abstract: No abstract text available
    Text: •€> P e FORWARD INTERNATIONAL ELECTRONICS LTD. 2SA950 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * Complement To2SC212Q * Collector Current Ic=-800mA ABSOLUTE MAXIMUM RATINGS at Tanfc=25°C Characteristic


    OCR Scan     		2SA950 To2SC212Q -800mA -100uA -100mA -500mA 500mA -20mA PDF

    ta8529f

    Abstract: TA8528 toshiba mcp
    Text: TOSHIBA TA8529F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP PACKAGE TA8529F Stepping Motor Driver 1C TA8528 + 2SA950 X 4 MCP TA8529F is a stepping motor driver 1C which operates based on bipolar transistors. The device incorporates stepping motor driver 1C TA8528


    OCR Scan     		TA8529F TA8528 2SA950 TA8529F TA8528 100mA 400mA toshiba mcp PDF