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    2SA21 Search Results

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    2SA21 Price and Stock

    Rochester Electronics LLC 2SA2126-TL-H

    TRANS PNP 50V 3A TP-FA
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    DigiKey 2SA2126-TL-H Bulk 540,423 1,192
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    Rochester Electronics LLC 2SA2124-S-TD-E

    TRANS PNP 30V 2A PCP
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    DigiKey 2SA2124-S-TD-E Bulk 42,000 1,402
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    Rochester Electronics LLC 2SA2126-S-TL-E

    TRANS PNP 50V 3A TP-FA
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    DigiKey 2SA2126-S-TL-E Bulk 33,600 897
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    Rochester Electronics LLC 2SA2126-E

    TRANS PNP 50V 3A TP
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    DigiKey 2SA2126-E Bag 33,267 1,268
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    Rochester Electronics LLC 2SA2127-AE

    TRANS PNP 50V 2A 3-MP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA2127-AE Bulk 22,014 1,567
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    Find more 2SA21 price and stock on Findchips.com

    2SA21 Datasheets (206)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA21 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA21 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA21 Unknown Cross Reference Datasheet Scan PDF
    2SA21 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA21 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA21 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA21 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA21 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA210 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA210 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA210 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SA210 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA210 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA210 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA210 Unknown Vintage Transistor Datasheets Scan PDF
    2SA210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA2101 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SA2102 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SA210H Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA210H Unknown Discontinued Transistor Data Book 1975 Scan PDF
    ...

    2SA21 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zDimensions Unit : mm zApplications For switching, for muting.


    Original     		2SA2018 2SA2030 2SA2119K 500mA 2SA2018 250mA 200mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SC6026MFV 2SA2154MFV PDF

    2SA2151

    Abstract: 2sc6011 200v 5a pnp 2sa215
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications


    Original     		2SA2151 -200V 2SC6011 -50mA -200V 2SA2151 2sc6011 200v 5a pnp 2sa215 PDF

    2SA2182

    Abstract: 2SA21
    Text: 2SA2182 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 80 MHz typ. Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit


    Original     		2SA2182 2SA2182 2SA21 PDF

    2SA21

    Abstract: 2SA2154 2SC6026
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026


    Original     		2SA2154 2SC6026 2SA21 2SA2154 2SC6026 PDF

    2SA2183

    Abstract: No abstract text available
    Text: 2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications • Unit: mm Low collector-emitter saturation : VCE sat = −1.0 V（max） Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		2SA2183 2SA2183 PDF

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV PDF

    2SA2183

    Abstract: No abstract text available
    Text: 2SA2183 東芝トランジスタ シリコンＰＮＰエピタキシャル形 2SA2183 大電流スイッチング用 単位: mm コレクタ飽和電圧が低い。：VCE sat = −1.0 V（最大） 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格


    Original     		2SA2183 SC-67 2-10U1A 20070701-JA 2SA2183 PDF

    2SA2190

    Abstract: No abstract text available
    Text: 2SA2190 東芝複合デバイス シリコンPNPエピタキシャル形トランジスタ 2SA2190 ○ 電力増幅用 ○ 励振段電力増幅用 • 単位: mm トランジション周波数が高い。 :ｆＴ=200MHz（標準） 絶対最大定格 Tc = 25°C


    Original     		2SA2190 200MHz SC-67 2-10U1A 20070701-JA 2SA2190 PDF

    2SA2161J

    Abstract: 2SC6037J
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SC6037J 2SA2161J 2SA2161J 2SC6037J PDF

    2SA2162

    Abstract: 2SC6036 2SC603
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05


    Original     		2002/95/EC) 2SA2162 2SC6036 2SA2162 2SC6036 2SC603 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features VCBO Collector-emitter voltage (Base open) VCEO Emitter-base voltage (Collector open)


    Original     		2002/95/EC) 2SC6054J 2SA2174J PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC6036G 2SA2162G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054G • Features M Di ain sc te on na tin nc ue e/ d  Package  Absolute Maximum Ratings Ta = 25°C


    Original     		2002/95/EC) 2SA2174G 2SC6054G PDF

    2SA2180

    Abstract: 2SA21
    Text: 2SA2180 Ordering number : EN8526 PNP Epitaxial Planar Silicon Transistor 2SA2180 50V / 5A High-Speed Switching Applications Applications • High-speed switching applications switching regulator, driver circuit . Features • • • • Adoption of MBIT processes.


    Original     		2SA2180 EN8526 2SA2180 2SA21 PDF

    SOT-346

    Abstract: 2SA2018 2SA2030 2SA2119K SC-75A T146
    Text: 2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. 0.8 1.6 0.2 0.3 zFeatures 1 A collector current is large.


    Original     		2SA2018 2SA2030 2SA2119K 500mA 250mA -200mA -10mA SOT-346 2SA2119K SC-75A T146 PDF

    2SA2163

    Abstract: 2SA21
    Text: Transistors 2SA2163 Silicon PNP epitaxial planar type For high frequency amplification Unit: mm • Features 3 2 0.60±0.05 1 0.39+0.01 −0.03 1.00±0.05  Absolute Maximum Ratings Ta = 25°C 0.25±0.05 Symbol Rating Unit Collector-base voltage Emitter open


    Original     		2SA2163 2SA2163 2SA21 PDF

    2SA2122

    Abstract: 2SC5950
    Text: Transistors 2SA2122 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 0.425 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10 2 0.2±0.1 1 (0.65) (0.65)  Absolute Maximum Ratings Ta = 25°C


    Original     		2SA2122 2SC5950 2SA2122 2SC5950 PDF

    2SA2174J

    Abstract: 2SA21 2SC6054J 2sa2174j_cob-vcb 2SA2174
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)


    Original     		2002/95/EC) 2SA2174J 2SC6054J 2SA2174J 2SA21 2SC6054J 2sa2174j_cob-vcb 2SA2174 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05


    Original     		2002/95/EC) 2SC6036 2SA2162 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036G • Features  Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SA2162G 2SC6036G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Features  Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original     		2002/95/EC) 2SC5950G 2SA2122G PDF

    2SA2151

    Abstract: No abstract text available
    Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA2151 Silicon PNP Power Transistor ./ f pX^ DESCRIPTION 1I • High Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) r^, I PIN 1.8ASE


    Original     		2SA2151 -200V 2SC6011 -50mA -200V 2SA2151 PDF

    n2503

    Abstract: No abstract text available
    Text: Ordering number : EN7379A 2SA2112 Bipolar Transistor -50V, -3A, Low VCE sat , PNP Single NMP http://onsemi.com Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes Features • • Adoption of MBIT process Low collector-to-emitter saturation voltage


    Original     		EN7379A 2SA2112 15where n2503 PDF