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    2SA1962 TOSHIBA Search Results

    2SA1962 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    2SA1962 TOSHIBA Datasheets Context Search

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    Toshiba transistor A1962

    Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


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    PDF 2SA1962 2SC5242 Toshiba transistor A1962 a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242

    Untitled

    Abstract: No abstract text available
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


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    PDF 2SA1962 2SC5242

    transistor a1962

    Abstract: Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


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    PDF 2SA1962 2SC5242 2-16C1A transistor a1962 Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA

    transistor a1962

    Abstract: a1962 a1962 TOSHIBA Toshiba transistor A1962 2Sa1962 2SA1962 TOSHIBA TOSHIBA A1962 2SC5242
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


    Original
    PDF 2SA1962 2SC5242 transistor a1962 a1962 a1962 TOSHIBA Toshiba transistor A1962 2Sa1962 2SA1962 TOSHIBA TOSHIBA A1962 2SC5242

    Toshiba transistor A1962

    Abstract: a1962 TOSHIBA A1962 TOSHIBA A1962 transistor a1962 2SA1962 TOSHIBA 360MAX
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


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    PDF 2SA1962 2SC5242 2-16C1A Toshiba transistor A1962 a1962 TOSHIBA A1962 TOSHIBA A1962 transistor a1962 2SA1962 TOSHIBA 360MAX

    Toshiba transistor A1962

    Abstract: No abstract text available
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


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    PDF 2SA1962 2SC5242 Toshiba transistor A1962

    C5242 TOSHIBA

    Abstract: C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


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    PDF 2SC5242 2SA1962 2-16C1A C5242 TOSHIBA C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


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    PDF 2SC5242 2SA1962

    C5242 TOSHIBA

    Abstract: c5242 TOSHIBA C5242 Toshiba transistor c5242 transistor c5242 toshiba audio power amplifier 2SA1962 2SC5242 NPN Transistor 2sc5242
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


    Original
    PDF 2SC5242 2SA1962 C5242 TOSHIBA c5242 TOSHIBA C5242 Toshiba transistor c5242 transistor c5242 toshiba audio power amplifier 2SA1962 2SC5242 NPN Transistor 2sc5242

    Untitled

    Abstract: No abstract text available
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


    Original
    PDF 2SC5242 2SA1962

    c5242

    Abstract: C5242 TOSHIBA transistor c5242 TOSHIBA c5242
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


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    PDF 2SC5242 2SA1962 2-16C1A c5242 C5242 TOSHIBA transistor c5242 TOSHIBA c5242

    2SC5242

    Abstract: No abstract text available
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


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    PDF 2SC5242 2SA1962 2SC5242

    C5242

    Abstract: transistor c5242 C5242 TOSHIBA TOSHIBA C5242 NPN Transistor 2sc5242 Toshiba transistor c5242 2SA1962 2SC5242 2SA1962 TOSHIBA
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


    Original
    PDF 2SC5242 2SA1962 C5242 transistor c5242 C5242 TOSHIBA TOSHIBA C5242 NPN Transistor 2sc5242 Toshiba transistor c5242 2SA1962 2SC5242 2SA1962 TOSHIBA

    2SC5242

    Abstract: 2SA1962 Toshiba 2SC5242
    Text: TO SH IBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 POWER AMPLIFIER APPLICATIONS • High Collector Breakdown Voltage : V 0 e q = 23OV Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier


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    PDF 2SC5242 2SA1962 2SC5242 2SA1962 Toshiba 2SC5242

    NPN Transistor 2sc5242

    Abstract: transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER
    Text: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. • • • High Collector Breakdown Voltage : VCEO“ 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier


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    PDF 2SC5242 2SA1962 NPN Transistor 2sc5242 transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER

    a1962 TOSHIBA

    Abstract: Toshiba transistor A1962 transistor a1962 A1962 2SA1962 TOSHIBA 2SA1962 2SC5242
    Text: 2SA1962 TO SH IBA 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier


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    PDF 2SA1962 2SC5242 a1962 TOSHIBA Toshiba transistor A1962 transistor a1962 A1962 2SA1962 TOSHIBA 2SA1962

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X. • High Collector Breakdown Voltage : VCEO = 230V Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier


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    PDF 2SC5242 2SA1962

    Toshiba transistor A1962

    Abstract: a1962 TOSHIBA a1962 2SA1962 2SC5242 transistor 2sc5242
    Text: 2SA1962 TO SH IBA 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier


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    PDF 2SA1962 2SC5242 25transportation Toshiba transistor A1962 a1962 TOSHIBA a1962 2SA1962 transistor 2sc5242

    2SC5242

    Abstract: No abstract text available
    Text: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.


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    PDF 2SC5242 2SA1962 2-16C1A 2SC5242

    2SC5242

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE ? < mm; r wmr Unit in mm POWER AMPLIFIER APPLICATIONS 15.9 MAX. 03.2 ±0.2 • High Collector Breakdown Voltage : V q e O “ 23C V Min.) • Complementary to 2SA1962 • Recommend for SOW High Fidelity Àudio Frequency Amplifier


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    PDF 2SC5242 2SA1962 2-16C1A 2SC5242

    Toshiba 2SA1962

    Abstract: No abstract text available
    Text: 2SA1962 TOSHIBA 2 SA 1 9 6 2 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.9 MAX. • • • 03.2 ±0.2 High Collector Voltage : V q e O “ —230V Min. Complementary to 2SC5242 Recommend for SOW High Fidelity Àudio Frequency Amplifier


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    PDF 2SA1962 --230V 2SC5242 2-16C1A Toshiba 2SA1962

    transistor a1962

    Abstract: a1962 SA1962 2SA19 2SA1962 2SC5242
    Text: 2SA1962 TO SHIBA 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 0 3 .2 ± 0 .2 1 5.9 M AX. • • • High Collector Voltage : VCEO——230V Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier


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    PDF 2SA1962 VCEO----230V 2SC5242 2-16C1A --230V, transistor a1962 a1962 SA1962 2SA19 2SA1962

    NPN Transistor 2sc5242

    Abstract: 2SC5242
    Text: T O SH IB A 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5 .9 M A X . • • • 0 3 .2 ± 0.2 High Collector Breakdown Voltage : VCEO = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier


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    PDF 2SC5242 2SA1962 2-16C1A NPN Transistor 2sc5242 2SC5242

    Untitled

    Abstract: No abstract text available
    Text: 2SA1962 T O SH IB A 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5 .9 M A X . • • • 03.2 ± 0.2 High Collector Voltage : Vq e O = -230V Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier


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    PDF 2SA1962 -230V 2SC5242 2-16C1A