Toshiba transistor A1962
Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
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2SA1962
2SC5242
Toshiba transistor A1962
a1962
transistor a1962
TOSHIBA A1962
a1962 TOSHIBA
2SA1962 TOSHIBA
2SA1962
2SC5242
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Untitled
Abstract: No abstract text available
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
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2SA1962
2SC5242
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transistor a1962
Abstract: Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
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2SA1962
2SC5242
2-16C1A
transistor a1962
Toshiba transistor A1962
A1962
2SA1962 TOSHIBA
2SA1962
transistor 2sc5242
a1962 TOSHIBA
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transistor a1962
Abstract: a1962 a1962 TOSHIBA Toshiba transistor A1962 2Sa1962 2SA1962 TOSHIBA TOSHIBA A1962 2SC5242
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
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2SA1962
2SC5242
transistor a1962
a1962
a1962 TOSHIBA
Toshiba transistor A1962
2Sa1962
2SA1962 TOSHIBA
TOSHIBA A1962
2SC5242
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Toshiba transistor A1962
Abstract: a1962 TOSHIBA A1962 TOSHIBA A1962 transistor a1962 2SA1962 TOSHIBA 360MAX
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
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2SA1962
2SC5242
2-16C1A
Toshiba transistor A1962
a1962 TOSHIBA
A1962
TOSHIBA A1962
transistor a1962
2SA1962 TOSHIBA
360MAX
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Toshiba transistor A1962
Abstract: No abstract text available
Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.
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2SA1962
2SC5242
Toshiba transistor A1962
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C5242 TOSHIBA
Abstract: C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
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2SC5242
2SA1962
2-16C1A
C5242 TOSHIBA
C5242
transistor c5242
TOSHIBA C5242
Toshiba transistor c5242
2sc5242 transistor
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Untitled
Abstract: No abstract text available
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
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2SC5242
2SA1962
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C5242 TOSHIBA
Abstract: c5242 TOSHIBA C5242 Toshiba transistor c5242 transistor c5242 toshiba audio power amplifier 2SA1962 2SC5242 NPN Transistor 2sc5242
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
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2SC5242
2SA1962
C5242 TOSHIBA
c5242
TOSHIBA C5242
Toshiba transistor c5242
transistor c5242
toshiba audio power amplifier
2SA1962
2SC5242
NPN Transistor 2sc5242
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Untitled
Abstract: No abstract text available
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
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2SC5242
2SA1962
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c5242
Abstract: C5242 TOSHIBA transistor c5242 TOSHIBA c5242
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
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2SC5242
2SA1962
2-16C1A
c5242
C5242 TOSHIBA
transistor c5242
TOSHIBA c5242
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2SC5242
Abstract: No abstract text available
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
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2SC5242
2SA1962
2SC5242
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C5242
Abstract: transistor c5242 C5242 TOSHIBA TOSHIBA C5242 NPN Transistor 2sc5242 Toshiba transistor c5242 2SA1962 2SC5242 2SA1962 TOSHIBA
Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage
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2SC5242
2SA1962
C5242
transistor c5242
C5242 TOSHIBA
TOSHIBA C5242
NPN Transistor 2sc5242
Toshiba transistor c5242
2SA1962
2SC5242
2SA1962 TOSHIBA
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2SC5242
Abstract: 2SA1962 Toshiba 2SC5242
Text: TO SH IBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 POWER AMPLIFIER APPLICATIONS • High Collector Breakdown Voltage : V 0 e q = 23OV Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier
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2SC5242
2SA1962
2SC5242
2SA1962
Toshiba 2SC5242
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NPN Transistor 2sc5242
Abstract: transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER
Text: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. • • • High Collector Breakdown Voltage : VCEO“ 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier
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2SC5242
2SA1962
NPN Transistor 2sc5242
transistor 2sc5242
2SA1962
2SC5242
80W TRANSISTOR AUDIO AMPLIFIER
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a1962 TOSHIBA
Abstract: Toshiba transistor A1962 transistor a1962 A1962 2SA1962 TOSHIBA 2SA1962 2SC5242
Text: 2SA1962 TO SH IBA 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier
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2SA1962
2SC5242
a1962 TOSHIBA
Toshiba transistor A1962
transistor a1962
A1962
2SA1962 TOSHIBA
2SA1962
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X. • High Collector Breakdown Voltage : VCEO = 230V Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier
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2SC5242
2SA1962
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Toshiba transistor A1962
Abstract: a1962 TOSHIBA a1962 2SA1962 2SC5242 transistor 2sc5242
Text: 2SA1962 TO SH IBA 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier
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2SA1962
2SC5242
25transportation
Toshiba transistor A1962
a1962 TOSHIBA
a1962
2SA1962
transistor 2sc5242
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2SC5242
Abstract: No abstract text available
Text: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.
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2SC5242
2SA1962
2-16C1A
2SC5242
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2SC5242
Abstract: No abstract text available
Text: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE ? < mm; r wmr Unit in mm POWER AMPLIFIER APPLICATIONS 15.9 MAX. 03.2 ±0.2 • High Collector Breakdown Voltage : V q e O “ 23C V Min.) • Complementary to 2SA1962 • Recommend for SOW High Fidelity Àudio Frequency Amplifier
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2SC5242
2SA1962
2-16C1A
2SC5242
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Toshiba 2SA1962
Abstract: No abstract text available
Text: 2SA1962 TOSHIBA 2 SA 1 9 6 2 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.9 MAX. • • • 03.2 ±0.2 High Collector Voltage : V q e O “ —230V Min. Complementary to 2SC5242 Recommend for SOW High Fidelity Àudio Frequency Amplifier
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2SA1962
--230V
2SC5242
2-16C1A
Toshiba 2SA1962
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transistor a1962
Abstract: a1962 SA1962 2SA19 2SA1962 2SC5242
Text: 2SA1962 TO SHIBA 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 0 3 .2 ± 0 .2 1 5.9 M AX. • • • High Collector Voltage : VCEO——230V Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier
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2SA1962
VCEO----230V
2SC5242
2-16C1A
--230V,
transistor a1962
a1962
SA1962
2SA19
2SA1962
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NPN Transistor 2sc5242
Abstract: 2SC5242
Text: T O SH IB A 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5 .9 M A X . • • • 0 3 .2 ± 0.2 High Collector Breakdown Voltage : VCEO = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier
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2SC5242
2SA1962
2-16C1A
NPN Transistor 2sc5242
2SC5242
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Untitled
Abstract: No abstract text available
Text: 2SA1962 T O SH IB A 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5 .9 M A X . • • • 03.2 ± 0.2 High Collector Voltage : Vq e O = -230V Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier
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2SA1962
-230V
2SC5242
2-16C1A
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