2SA1328
Abstract: 2SC3345
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -6A ·High Switching Speed ·Complement to Type 2SC3345 APPLICATIONS ·Designed for high current switching applications.
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2SA1328
2SC3345
2SA1328
2SC3345
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2SA1323
Abstract: No abstract text available
Text: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Allowing supply with the radial taping
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2SA1323
2SC3314
2SA1323
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2SA1020Y
Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH
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TEC9015B
2SA661
2SB1002
2SB1059
2SB740
BFT71
BFT81
2SA493G
2SA1020Y
2SA1015LY
2SA10150
2SA1015L-Y
2SA10200
2SA12130
TEC9015
2SA705
2SA1015L
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Untitled
Abstract: No abstract text available
Text: 2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Complementary to 2SA1321 Unit: mm
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2SC3334
2SA1321
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2sa1320
Abstract: 2SC3333
Text: 2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1320 High Voltage Switching Applications Color TV Chroma Output Applications • High voltage: VCEO = −250 V · Low Cre: 1.8 pF (max) · Complementary to 2SC3333 Unit: mm Maximum Ratings (Ta = 25°C)
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2SA1320
2SC3333
2sa1320
2SC3333
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Untitled
Abstract: No abstract text available
Text: 2SA1321 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)50m Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SA1321
Freq80M
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A1327A
Abstract: 2SA1327A
Text: 2SA1327A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1327A ○ ストロボフラッシュ用 ○ 中電力増幅用 単位: mm • hFE = 100~320 (VCE = −2 V, IC = −1.0 A) • hFE = 70 (最小) (VCE = −2 V, IC = −8 A)
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2SA1327A
2-10R1A
2SA1327A-6
20070701-JA
A1327A
2SA1327A
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A1327
Abstract: 2SA1327A
Text: 2SA1327A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1327A Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain: hFE = 70 (min) (VCE = −2 V, IC = −1 A) • Low collector saturation voltage: VCE (sat) = −0.5 V (max)
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2SA1327A
A1327
2SA1327A
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2sa1328
Abstract: 2SC3345
Text: JMnic Product Specification 2SA1328 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3345 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING
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2SA1328
O-220
2SC3345
O-220)
2sa1328
2SC3345
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2SC3334
Abstract: C3334 2SA1321
Text: 2SC3334 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3334 High-Voltage Switching Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 250 V • Low Cre: 1.8 pF (max) • Complementary to 2SA1321 Unit: mm
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2SC3334
2SA1321
2SC3334
C3334
2SA1321
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Untitled
Abstract: No abstract text available
Text: JbE.rn.i~Condii.ctot L/^ioducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1327 DESCRIPTION • Low Collector Saturation Voltage: VcE<satr -0.5V(Max.)@lc= -8A
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2SA1327
O-220Fa
-10mA;
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2SC3346
Abstract: 2SA1329
Text: SavantIC Semiconductor Product Specification 2SC3346 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA1329 ·High speed switching time : tstg=1.0µs Typ. ·Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A
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2SC3346
O-220C
2SA1329
2SC3346
2SA1329
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2SA1012
Abstract: 2SA1293 2SC2562 2SC3258
Text: TOSHIBA Powered by TO-220-AB 20 20 40 40 75 75 40 40 60 80 80 100 100 20MIN. 10MIN. 10MIN. 10MIN. 8-40 8-40 12MIN. 10MIN. 10MIN 5-30 5-30 6-30 6-30 7 10 2SA1328 2SA1329 12 2 3 4 5 8 8 12 5 5 5 5 5 5 5 5 5 5 5 5 5 0.1 0.5 0.5 0.8 2 2 3 3 4 5 5 8 8 1 1 1 0.6
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08S87
20MIN.
2SA1012
2SA1293
2SC2562
2SC3258
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2SA1327
Abstract: No abstract text available
Text: AOK AOK Semiconductor Product Spec ification 2SA1327 Silicon PNP P o w e r Transistors DESCRIPTION • W ith TO-22QFa package • L o w c o lle c to r s a tu r a tio n v o lta g e • H ig h c u rre n t c a p a c ity APPLICATIONS ¿ • S tro b e fla s h a p p lic a tio n s
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2SA1327
O-220Fa
O-22QFa)
500nut
Te-25
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sb 320 toshiba audio power amplifier
Abstract: No abstract text available
Text: Sb TOSHIBA {D I SC RE TE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO 2SA1327 » F I S C H T E S D 0007314 0 5óC 07314' » T “"3 ^ - / 7 SILICO N PNP E P IT A X IA L TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 10L3M A X.
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2SA1327
10L3M
sb 320 toshiba audio power amplifier
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150-mF
Abstract: 2SA1323 2SC333
Text: - - « J* m ^ @ m • 2 SC3 3 1 3 t o : iw fö T a s it r a : AM/FM 7 ~s-%<D RF i ü , g£, Ä j S l^ Ä S o • 2 S C 3 3 I 4 T O fö T : ¡ * Ä if O T 2SA1323 ¿ 3 > 7 -,J > 4 $ Ä : AM/FM 7 § Vceo (V 20 Vebo (V) 5 M M H z) ! c (mA) 30 Cre(pF) hFE Pc(mW)
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200MHz
2SA1323
900MHz
20thA
20IHA
150-mF
2SA1323
2SC333
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2SA1327A
Abstract: No abstract text available
Text: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr
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2SA1327A
hpE-70
2SA1327A
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A1320 TRANSISTOR
Abstract: A1320 2SA1320 2SC3333 nj TRANSISTOR
Text: 2SA1320 TOSHIBA 2 S A 1 320 T O SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SW ITCHING APPLICATIONS COLOR TV C H R O M A OUTPUT APPLICATIONS . 5.1 M AX. • • • High Voltage : VCEO= —250V Low Cre : 1.8pF(Max.)
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2SA1320
--250V
2SC3333
A1320 TRANSISTOR
A1320
2SA1320
nj TRANSISTOR
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2SA1320
Abstract: No abstract text available
Text: 2SA1320 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS COLOR TV CHROMA OUTPUT APPLICATIONS .5.1 M AX. • • • High Voltage : V q e q ——250V Low Cre : i.SpF (Max.) Complementary to 2SC3333
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2SA1320
----250V
2SC3333
2SA1320
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2SC3346
Abstract: No abstract text available
Text: 2SC3346 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage : v C E sat = 0-4V (Max.) (at Ic = 6A) High Speed Sw itching Time : tstg = 1.0/iS (Typ.) Com plem entary to 2SA1329
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2SC3346
2SA1329
2SC3346
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1327 U nit in mm STROBE FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. • • • • 1CL3MAX. MIN. hpE of 70 at —2V, —8A —10A Rated Collector Current MAX. V cE (sat)of -0.5V at -8 A Ic 20W at 25°C Case Temperature
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2SA1327
--10A
--10mA,
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2SA1327A
Abstract: No abstract text available
Text: TO SH IBA 2SA1327A 2SA1 3 2 7 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : h p E -70 (min.) (VCE = —2V, Ic ——1A) Low Collector Saturation Voltage : Vnxr
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2SA1327A
hpE-70
2SA1327A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3333 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS COLOR TV CHROMA OUTPUT APPLICATIONS 5.1 M AX. • High Voltage : V ç e o = 250V : 1.8pF (Max.) Low Cre Complementary to 2SA1320
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2SC3333
2SA1320
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