2SA1254
Abstract: 2SC2206
Text: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT
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2SC2206
2SA1254
2SA1254
2SC2206
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2SA1254
Abstract: 2SC2206
Text: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage
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2SC2206
2SA1254
2SA1254
2SC2206
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10,7mhz
Abstract: 2SA1254 2SC2206
Text: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open)
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2SA1254
2SC2206
10,7mhz
2SA1254
2SC2206
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage
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2SC2206
2SA1254
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10,7mhz
Abstract: 2SA1254 2SC2206
Text: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C (0.85) Symbol Rating Unit VCBO 30 V Collector-emitter voltage (Base open)
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2SC2206
2SA1254
10,7mhz
2SA1254
2SC2206
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2SC2206
Abstract: 2SA1254 transistor 2Sc2206
Text: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as
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2SC2206
2SA1254
100MHz
2SC2206
2SA1254
transistor 2Sc2206
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2SA1254
Abstract: 2SC2206
Text: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current
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2SA1254
2SC2206
2SA1254
2SC2206
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Untitled
Abstract: No abstract text available
Text: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm 2.5±0.1 R 0.9 R 0.7 • Absolute Maximum Ratings Ta = 25°C 1.0 4.1±0.2 2.0±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es
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2SC2206
2SA1254
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2SA1254
Abstract: 2SC2206
Text: Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2SA1254
2SC2206
2SA1254
2SC2206
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2SA1254
Abstract: 2SC2206
Text: Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1254 Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as
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2SC2206
2SA1254
2SA1254
2SC2206
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2SA1254
Abstract: 2SC2206
Text: Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 • Absolute Maximum Ratings Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2SA1254
2SC2206
2SA1254
2SC2206
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2SA1254
Abstract: 2SC2206
Text: Transistors 2SA1254 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2206 Unit: mm 2.5±0.1 1.0 4.1±0.2 2.0±0.2 4.5±0.1 R 0.9 R 0.7 2.4±0.2 • High transition frequency fT • Low collector-emitter saturation voltage VCE(sat)
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2SA1254
2SC2206
2SA1254
2SC2206
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2SA1254
Abstract: 2SC2206
Text: Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 Unit: mm 6.9±0.1 1.0 0.85 Ta=25˚C 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage
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2SA1254
2SC2206
2SA1254
2SC2206
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2SA1254
Abstract: 2SC2206
Text: Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1254 Unit: mm • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current
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2SC2206
2SA1254
2SA1254
2SC2206
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2SA1281
Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400
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2SA1201
2SA1202
2SA1203
2SA1204
2SA1205
2SA1206
2SA1207
2SA1208
2SA1209
2SA1210
2SA1281
2SA1277
2SA1273
2sa1274
2SA1251
2SA1218
2SA1236
2sc3248
2sa1229
2SA1267
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2sc2258 complementary
Abstract: 2SC2206 2SC2258 2SA1254 2SC2258A 2SC2258B Ma0058
Text: P A N A S O N I C INDL/ELEK-CSEHI} 72C D | b^BSflSM □ □ □ c]145 fi K -7- 3 / - / ? 2SC2206 2SC2206 '> iJ NPN N P N Epitaxial Planar Amplifier 'J /C om plem entary Pair with 2SA1254 2SA1254 6.9±0.1 • 4# ^ /F e a t u r e s • F M /A M y t « 7 R F J i i f l i z f t j » / S u i t a b l e fo r R F A m plifier in F M /
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2SC2206
2SA1254
2SA1254
2sc2258 complementary
2SC2206
2SC2258
2SC2258A
2SC2258B
Ma0058
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2SA1015
Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624
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2SB1037
2SB649A
2SB1186A
2SA1306A
2SB1186B
2SB548
2SB1314
2SA1783
2SA1015
2SA733
2SA1091
2SA1371
2SA562TM
2SB548
2SB814
2SA1243
2SB642
2SB793
2SA1306A
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2SC2633
Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
Text: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D | bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with
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2SA111Q
2SA1110
2SC2590
2SC2590
-99-i-l
100MHz
2SC2633
2SA1110
2SA1125
2SA1254
2SC2206
2SA111
2SA11
CC1216
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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A1534
Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin
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T0-92
T092L:
T0220F
T0220
T092NL
A1534
T092
2SB642
T092L
2SB0774
SS-Mini 3
2SA1495
2SB946
2SA1124
A1534A
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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