2SA1020 TRANSISTOR Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC= -1A)

pnp transistor a1020

Abstract: A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655
Contextual Info: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)

pnp transistor a1020

Abstract: A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y pnp A1020 Y transistor BR A1020 A1020 PNP toshiba marking code transistor 2sc2655 A1020 Y transistor
Contextual Info: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)

pnp transistor a1020

Abstract: A1020 transistor transistor a1020 toshiba marking code transistor 2sc2655 A1020 Y pnp A1020 Y A1020 PNP a1020 pnp transistor 2SA1020 toshiba
Contextual Info: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)

2sa1020

Abstract: 2SA1020L 2SA1020L UTC 2sc2655 sot-23 2sc2655 SOT89 transistor 2SA1020 2SA1020G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. „ FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

pnp transistor a1020

Abstract: A1020 transistor 2SA1020 A1020 Y pnp toshiba marking code transistor 2sc2655 transistor a1020 a1020 pnp 2SC2655 A1020 a1020 pnp transistor
Contextual Info: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW

2SA1020L

Abstract: 2SA1020 TO92NL 2SA1020L UTC TO-92NL 2sc2655 SOT89 Complement 2sc2655 2SC2655 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A transistor 2SA1020
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES 1 *Low collector saturation voltage: VCE SAT =-0.5V(max.) (IC=-1A)

2SA1020L UTC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

2SA1020

Abstract: 2SC2655 2sc2655 SOT
Contextual Info: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)

2SA1020

Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A pnp transistor 2sa1020 50V 1A PNP power transistor transistor pnp 1a
Contextual Info: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES 1 *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)

equivalent 2SC2655

Abstract: 2SA1020 2SC2655 2sc2655 SOT89 2sc2655 SOT HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
Contextual Info: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)

2SA1020

Contextual Info: 2SA1020 2SA1020 TO-92MOD TRANSISTOR PNP FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 900 mW (Tamb=25℃) 3. BASE Collector current ICM : -2 A Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

TRANSISTOR, 2SA1020Y

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1020 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Power Amplifier Applications 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

2SA1020

Contextual Info: ST 2SA1020 PNP Silicon Epitaxial Transistor POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low Collector Saturation Voltage VCE sat =-0.5V (Max.) (IC=-1A) High Speed Switching Time Tstg=1.0us (Typ.) TO-92 Plastic Package Weight approx. 0.19g

Contextual Info: MCC TM Micro Commercial Components 2SA1020-O 2SA1020-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF"

2SA1020

Abstract: 2SA1020G 2SA1020RLRA 2SA1020RLRAG 2SA JAPAN TRANSISTOR MANUAL
Contextual Info: 2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCE 50 Vdc Collector −Base Voltage VCB 50 Vdc Emitter −Base Voltage

2SA1020 Transistor

Abstract: 2SA1020
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1020 TRANSISTOR PNP TO-92MOD 1. EMITTER FEATURES Power amplifier applications 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

2SA1020

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1020 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES Power amplifier applications 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) z High Speed Switching Time: tstg=1 s(Typ.) z Complementary to 2SA1020

2SA1020

Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
Contextual Info: ST 2SA1020 PNP Silicon Epitaxial Transistor POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low Collector Saturation Voltage VCE sat =-0.5V (Max.) (IC=-1A) High Speed Switching Time Tstg=1.0us (Typ.) TO-92 Plastic Package Weight approx. 0.19g

2SA1020Y

Contextual Info: MCC TM Micro Commercial Components 2SA1020-O 2SA1020-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF"

2SA1020

Contextual Info: ST 2SA1020 PNP Silicon Epitaxial Transistor Power amplifier application Power switching application 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage

2sc2655

Abstract: equivalent 2SC2655 2SA1020
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020