2SA1012 TRANSISTOR Search Results

2SC2562

Abstract: 2SA1012
Contextual Info: Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING

2sc2562

Abstract: 2SA1012
Contextual Info: SavantIC Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING

2sa1012

Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562
Contextual Info: SavantIC Semiconductor Product Specification 2SA1012 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD2562 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING

2sc2562

Abstract: 2SA1012 2SA1012 jmnic
Contextual Info: JMnic Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION

2sa1012

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SA1012 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low collector saturation voltage VCE sat =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-220

Contextual Info: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)

2SA1012

Contextual Info: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-252 1:BASE 2: COLLECTOR 3: EMITTER

2sc2562

Abstract: 2SA1012
Contextual Info: Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage

2SA1012

Abstract: transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors PNP FEATURES HIGH CURRENT SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A . High Speed Swithing Time : tstg = 1.0us (Typ.)

2SA1012

Contextual Info: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-251 1:BASE 2: COLLECTOR 3: EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors PNP FEATURES HIGH CURRENT SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A . High Speed Swithing Time : tstg = 1.0us (Typ.)

transistor 2sA1012

Abstract: 2SA1012 2sc2562
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.

2SA1012

Abstract: 2sc2562
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . „ FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0 s(Typ.) *Complementary To 2SC2562 „ ORDERING INFORMATION

a1012 transistor

Abstract: transistor A1012 a1012 a1012* transistor
Contextual Info: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR PNP FEATURES z HIGH CURRENT SWITCHING APPLICATIONS. z Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A z High Speed Swithing Time : tstg = 1.0us (Typ.)

2SA1012

Abstract: hFE is transistor to220
Contextual Info: ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION .  FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0s(Typ.) *Complementary To 2SC2562  ORDERING INFORMATION

2sc2562

Abstract: 2SA1012 A101 AC75 2SC2562 Toshiba
Contextual Info: 2SA1012 TOSHIBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = —0.4V (Max.) at I q = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.)

2SA1012

Abstract: 2SA1012L 2sc2562 transistor 2sA1012
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION 1 TO- 251 . FEATURES 1 TO-252 *Low collector saturation voltage VCE SAT =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562

2SA1012

Abstract: 50V 1A PNP power transistor
Contextual Info: 2SA1012 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features — 1 2 3 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562

Contextual Info: TOSHIBA 2SA1012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 Q1 2 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= “ 0*4V (Max.) at 1q = -3 A Hieh Speed Switching Time : tc,+rr= l.Ows(Tvd.)

transistor Ic 1A

Contextual Info: 2SA1012 TO SH IBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm « ii MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors TO-220 PNP FEATURES z High Current Switching Applications. z Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A z High Speed Swithing Time : tstg = 1.0us (Typ.)