2N7334
Abstract: 2N7334 JANTX
Text: 2N7334 Qualified Levels: JAN, JANTX, and JANTXV QUAD N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/597 DESCRIPTION This 2N7334 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage
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2N7334
MIL-PRF-19500/597
2N7334
MIL-PRF-19500/597.
MO-036AB
T4-LDS-0212,
2N7334 JANTX
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: 2N7334 MO-036AB
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 November 2010. MIL-PRF-19500/597E 18 August 2010 SUPERSEDING MIL-PRF-19500/597D 8 September 2003 * PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/597E
MIL-PRF-19500/597D
2N7334,
MIL-PRF-19500.
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
2N7334
MO-036AB
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2N6782 JANTX
Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE
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IRH7054
Oct-96
IRH7150
IRH7250
IRH7450SE
Nov-96
IRH8054
2N6782 JANTX
2N6758 JANTX
2N6756 JANTX
2N6766 JANTX
2N6792 JANTX
2N6796U
60022
2N7236
2n6806 jantx
2N6770 JANTX
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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2N7334
Abstract: 2N7334 JANTX IRFG110 JANTX2N7334
Text: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm The HEXFET technology is the key to International
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IRFG110
SN7334
JANTX2N7334
JANTXVSN7334
I-206
IRFG110,
2N7334
I-207
2N7334 JANTX
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2N7334
Abstract: IRFG110 JANTXV2N7334
Text: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]
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IRFG110
JANTXV2N7334
MIL-S-19500/5S7]
2N7334
I-207
JANTXV2N7334
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.396E I“R INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETb [REF: M IL -S -19500/597] 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Vblt, 0.70 Ohm Product Summary <D The HEXFET technology is the key to International
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IRFG110
JANTXV2ISI7334
I-207
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jantxv2n7224
Abstract: 2N7225
Text: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3
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IRFG110,
2N7334,
JANTX2N7334,
JANTXV2N7334.
I-405
FV064.
FV360.
FV460.
jantxv2n7224
2N7225
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JANTX2N7334
Abstract: irfy430
Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6
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irfg110
M0-036AB
2n7334
jantx2n7334
jantxv2n7334
irfg5110
irfg6110
2n7336
irfy430
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Untitled
Abstract: No abstract text available
Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17
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IRFG110
2N7334
JANTX2N7334
JANTXV2N7334
IRFG5110*
N7335
JANTXV2N7335
IRFV064
IRFV360
IRFV460
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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