2N7218
Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Text: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, 2N7219, 2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
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2N7218,
JANTX2N7218,
JANTXV2N7218
2N7219,
JANTX2N7219,
JANTXV2N7219
2N7221,
JANTX2N7221,
JANTXV2N7221
2N7222,
2N7218
2N7219
2N7221
2N7222
JANTX2N7218
JANTX2N7219
JANTX2N7221
JANTX2N7222
JANTXV2N7218
JANTXV2N7219
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Untitled
Abstract: No abstract text available
Text: 2N7219+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55
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2N7219
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Untitled
Abstract: No abstract text available
Text: 2N7219 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55
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2N7219
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Untitled
Abstract: No abstract text available
Text: 2N7219+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55
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2N7219
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2N7219
Abstract: IRFM240
Text: IRFM240 2N7219 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) VDSS ID(cont) RDS(on) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
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IRFM240
2N7219
O-254
254AA
2N7219
IRFM240
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Untitled
Abstract: No abstract text available
Text: 2N7219U Transistors N-Channel JFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)14 I(G) Max. (A) Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)150õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V)2.0 I(DSS) Max. (A)
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2N7219U
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2N6801LCC6
Abstract: No abstract text available
Text: Search Results Part number search for devices beginning "2N6801" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N6801 N-Channel TO39 450V 2.5A 25W
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2N6801"
2N6801
2N6801LCC4
2N6801LCC4-JQR-B
2N6801LCC6
2N6801LCC6-JQR-B
2N6801SMD
2N6801SMD-JQR-B
O276AB)
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/596K 17 April 2013 SUPERSEDING MIL-PRF-19500/596J 14 April 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
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MIL-PRF-19500/596K
MIL-PRF-19500/596J
2N7218,
2N7219,
2N7221,
2N7222,
2N7218U,
2N7219U,
2N7221U,
2N7222U,
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2N7219U
Abstract: 2N7218U 2N7221 2N7221U 2N7219U JANTX 2N7218 2N7219 2N7222 2N7222U 2N7219 JANTXV
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 July 2009. MIL-PRF-19500/596J 14 April 2009 SUPERSEDING MIL-PRF-19500/596H 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
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MIL-PRF-19500/596J
MIL-PRF-19500/596H
2N7218,
2N7219,
2N7221,
2N7222,
2N7218U,
2N7219U,
2N7221U,
2N7222U,
2N7219U
2N7218U
2N7221
2N7221U
2N7219U JANTX
2N7218
2N7219
2N7222
2N7222U
2N7219 JANTXV
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SHD239608
Abstract: shd239606
Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM
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O-254,
O-257)
SHD226413
SHD226401
SHD226402
SHD226403
SHD226404
SHD226405
SHD226406
SHD226407
SHD239608
shd239606
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F0011
Abstract: No abstract text available
Text: SFF240J SFF240JR Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ 15 AMP, 200 Volts, 0.18 Ω
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SFF240J
SFF240JR
IRFY240
2N7219
F00111C
O-257
F0011
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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S18A
Abstract: No abstract text available
Text: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available
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2N7218
2N7219
2N7221
2N7222
O-254AA
S18A
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2N7218
Abstract: LD20A
Text: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V T h r u 500V. N - C h a n n e l E n h a n c e m e n t Mo d e . M O S F E T P o w e r Tr a n s i s t o r FEATURES • • • • Isolated Hermetic Metal Package Fast Switching
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2N7218
2N7219
2N7221
2N7222
O-254AA
2N7219
2N72inuous
2N7218
LD20A
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2N6801-SM
Abstract: BFC49
Text: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18
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2N6800SM
2N6801
2N6801-SM
2N6801LCC4
2N6802
2N6802SM
2N6845
2N6847
2N6849
2N6849L
BFC49
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TRANSISTOR PEC 545
Abstract: 2N7221 transistor 2Fn 1256C 2N7218 2N7219 2N7222
Text: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Ceramic Feedthroughs Available
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2N7218
2N7221
2N7219
2N7222
O-254AA
534-5776FAX
t1073
TRANSISTOR PEC 545
transistor 2Fn
1256C
2N7222
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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PD9555
Abstract: LS 1316 2N7219 555C IRFM240 2N7219 JANTX 2N721
Text: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM 240 SN7S19 JANTXSN7S19 JANTXVSN7S19 [REF: MIL-S-1S500/596] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET11 technology ¡s the key to International
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IRFM240
JANTXSN7S19
JANTXVSN7S19
MIL-S-1S500/596]
HEXFET11
irfm240d
irfm240u
O-254
MIL-S-19500
PD9555
LS 1316
2N7219
555C
IRFM240
2N7219 JANTX
2N721
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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2N7219
Abstract: 555C IRFM240 JANTXV2N7219 2N7219 JANTX
Text: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I« R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM840 8N7S19 2N7219 "‘ 2N7219 N-CHANNEL [REF: M IL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International
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IRFMS40
JANTXSN7S19
JANTXV2N7219
MIL-S-19500/5S6]
IRFM240D
IRFM240U
O-254
MIL-S-19500
2N7219
555C
IRFM240
JANTXV2N7219
2N7219 JANTX
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Untitled
Abstract: No abstract text available
Text: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017
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IRFM044
IRFM054
IRFM064
IRFM140
2N7218
JANTX2N7218
JANTXV2N7218
IRFM150
2N7224
JANTX2N7224
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2sc 1364 transistor
Abstract: LS 1316 0/2sc 1364 transistor
Text: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS4G 2IM7219 2N7219 JANTXVSN7S1S N-CHANNEL [REF: MIL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International
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2IM7219
JANTX2N7219
MIL-S-19500/5S6]
IRFM240D
IRFM240U
O-254
MIL-S-19500
2sc 1364 transistor
LS 1316
0/2sc 1364 transistor
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