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    2N7002K

    Abstract: No abstract text available
    Text: 2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features  ESD rating: 1000V HBM     Low On-Resistance: RDS(on) < 3 @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device


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    PDF 2N7002K OT-23 24-AUG-11 KSD-T5C097-000 2N7002K

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


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    PDF 2N7002K JESD22 OT-23

    transistor a114 esd

    Abstract: TRANSISTOR A114 A114 transistor 2n7002k
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


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    PDF 2N7002K 2N7002K JESD22 OT-23 transistor a114 esd TRANSISTOR A114 A114 transistor

    transistor A114

    Abstract: 2n7002k transistor a114 esd
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


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    PDF 2N7002K 2N7002K JESD22 OT-23 transistor A114 transistor a114 esd

    transistor A114

    Abstract: A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101 JESD22
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


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    PDF 2N7002K JESD22 OT-23 transistor A114 A114 transistor 2N7002K transistor a114 esd 2n7002k 7k transistor 2N7002K transistor C101 A114 C101

    2N7002K

    Abstract: A114A transistor 2N7002K fairchild semiconductor 2N7002K 2N7002K TRANSISTOR
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free/RoHS Compliant


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    PDF 2N7002K A114A C101C 2N7002K A114A transistor 2N7002K fairchild semiconductor 2N7002K 2N7002K TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed


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    PDF 2N7002K 380mA 310mA AEC-Q101 DS30896

    MARKING C7K

    Abstract: MSOT-23 2n7002k EQUIVALENT
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


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    PDF 2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K MSOT-23 2n7002k EQUIVALENT

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


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    PDF 2N7002K 380mA 310mA AEC-Q101 DS30896

    MARKING C7K

    Abstract: 2N7002K-7 2n7002k EQUIVALENT
    Text: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage


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    PDF 2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K 2N7002K-7 2n7002k EQUIVALENT

    s0246

    Abstract: 2N7002 2N7002K TNJO60
    Text: 2N7002K New Product Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 2 @ VGS = 10 V 300 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


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    PDF 2N7002K O-236 OT-23 2N7002 08-Apr-05 s0246 2N7002 2N7002K TNJO60

    transistor 2N7002K

    Abstract: 2N7002 2N7002K 7k marking
    Text: 2N7002K New Product Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 2 @ VGS = 10 V 300 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


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    PDF 2N7002K O-236 OT-23 2N7002 S-02464--Rev. 25-Oct-00 transistor 2N7002K 2N7002 2N7002K 7k marking

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance


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    PDF 2N7002K 380mA 310mA DS30896

    SILICONIX 2N7002

    Abstract: 2N7002 2N7002K s0246 2n7002 siliconix
    Text: 2N7002K New Product Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 2 @ VGS = 10 V 300 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


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    PDF 2N7002K O-236 OT-23 2N7002 S-02464--Rev. 25-Oct-00 SILICONIX 2N7002 2N7002 2N7002K s0246 2n7002 siliconix

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 • Halogen-free According to IEC 61249-2-21 Available • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF


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    PDF 2N7002K O-236 OT-23 2N7002K-T1 2N7002K-T1-E3 2N7002K-T1-GE3 18-Jul-08

    MARKING C7K

    Abstract: 2N7002KQ-13 2N7002K-7
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


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    PDF 2N7002K 380mA 310mA AEC-Q101 DS30896 MARKING C7K 2N7002KQ-13 2N7002K-7

    2N7002K-T1-E3

    Abstract: 2n7002k 7k 2N7002K-T1-GE3 2N7002KT1GE3 2N7002K 7K MARKING 2N7002K-T1
    Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 • Halogen-free According to IEC 61249-2-21 Available • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF


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    PDF 2N7002K O-236 OT-23 2N7002K-T1 2N7002K-T1-E3 2N7002K-T1-GE3 2N7002K-T1-E3 2n7002k 7k 2N7002K-T1-GE3 2N7002KT1GE3 2N7002K 7K MARKING 2N7002K-T1

    2N7002K-T1-E3

    Abstract: 2N7002K-T1 2N7002K 2N7002K-T1-GE3
    Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)


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    PDF 2N7002K O-236 OT-23 2002/95/EC 2N7002K-T1 2N7002K-T1-E3 11-Mar-11 2N7002K-T1 2N7002K 2N7002K-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)


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    PDF 2N7002K 2002/95/EC O-236 OT-23 2N7002K-T1 2N7002K-T1-E3 2N7002K-T1-GE3 11-Mar-11

    marking 7k sot-23 package

    Abstract: 2N7002K-T1-E3
    Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)


    Original
    PDF 2N7002K 2002/95/EC O-236 OT-23 2N7002K-T1 2N7002K-T1-E3 2N7002K-T1-GE3 2011/65/EU 2002/95/EC. marking 7k sot-23 package 2N7002K-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)


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    PDF 2N7002K O-236 OT-23 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    2N7002K-T1-E3

    Abstract: 2N7002K-T1-GE3 2N7002K-T1 2N7002K-T1 Vishay 2n7002k 7k 2N7002K
    Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)


    Original
    PDF 2N7002K O-236 OT-23 2002/95/EC 2N7002K-T1 2N7002K-T1-E3lectual 18-Jul-08 2N7002K-T1-E3 2N7002K-T1-GE3 2N7002K-T1 2N7002K-T1 Vishay 2n7002k 7k 2N7002K

    MAX17015B

    Abstract: max17015 fds8884 GRM21BR61E105K GRM31CR61E106K AC digital voltmeter LRC-LRF-1206LF-01
    Text: 19-4996; Rev 0; 10/09 MAX17015 Evaluation Kit Features The MAX17015 evaluation kit EV kit is a complete, fully assembled and tested surface-mount PCB that features the MAX17015B highly integrated, multichemistry battery-charger control IC. The MAX17015 EV kit utilizes two


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    PDF MAX17015 MAX17015B MAX17015B fds8884 GRM21BR61E105K GRM31CR61E106K AC digital voltmeter LRC-LRF-1206LF-01

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K Vishay Siliconix New Product N-Channel 60-V D-S MOSFET TrenchFET MOSFET PRODUCT SUMMARY Vds(V) r DS<on) 60 (Q) Id ( m A ) 2 V gs = 10V ESD Protected 300 2000 V FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Direct Logic-Level Interface: TTL7CM0S


    OCR Scan
    PDF 2N7002K O-236 OT-23 2N7002 S-02464--Rev. 25-Oct-OO S-02464-- 25-Oct-00