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Hewlett Packard Co HXTR-2101 GENERAL PURPOSE TRANSISTOR (Also Known As: 2N6679)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	HXTR-2101		2			1 $45.5 10 $45.5 100 $45.5 1000 $45.5 10000 $45.5	Buy Now

2N6679 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N6679		Hewlett-Packard	General Purpose Transistors		Scan	PDF
2N6679		Hewlett-Packard	Diode and Transistor Data Book 1980		Scan	PDF
2N6679		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
2N6679		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2N6679		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF

2N6679 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HMXR-5001 Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001 Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog	Original	PDF
2N6679 Abstract: HPAC-100 HPAC HXTR-2101 Text: COMPONENTS 2N6679 HXTR-2101 Features HIGH GAIN 10.5 dB Typical at 4 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE BIPOLAR TRANSISTORS GENERAL PURPOSE TRANSISTOR H E W L E T T P AC KARD G Description The 2N6679 (HXTR-2101) is an NPN bipolar transistor designed fo r high gain and o utp ut power at 4 GHz. The	OCR Scan	PDF	2N6679 HXTR-2101) 2N6679 HPAC-100, MIL-S-19500 HPAC-100 HPAC HXTR-2101
Untitled Abstract: No abstract text available Text: m 2N6679 \ \ SILICON NPN RF TRANSISTOR PACKAGE STYLE SOT-100 DESCRIPTION: The 2N6679 is Designed for 4.0 GHz Small Signal Thin and Thick Film RF Amplifier Applications. 02,65 m ax - s :!'4" '- MAXIMUM RATINGS 1,1 lc 70 mA V ce 20 V P diss 900 mW @ Tc = 87 °C	OCR Scan	PDF	2N6679 OT-100 2N6679
2N6679 Abstract: sot100 70MA20 SOT-100 Text: 2N6679 SILICON NPN RF TRANSISTOR PACKAGE STYLE SOT-100 DESCRIPTION: The 2N6679 is Designed for 4.0 GHz Small Signal Thin and Thick Film RF Amplifier Applications. 70 mA 20 V P d is s 900 mW @ Te %87 0C o Ie < m MAXIMUM RATINGS Tj -65 °C to +200 0C Tstg -65 0C to +200 0C	OCR Scan	PDF	2N6679 OT-100 sot100 70MA20 SOT-100
2N6679 Abstract: transistor GY 123 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2N6679 NPN S ilic o n High Fre q u e n cy T ra n sisto r . . . designed fo r use in h igh-frequency, sm all-sign a l, n a rro w and w id e b a n d a m p lifie rs. Ideal fo r use in m ic ro s trip th in and th ick film applications.	OCR Scan	PDF	2N6679 IL-S-19500 MIL-STD-750/883 IS12I 2N6679 transistor GY 123
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	PDF	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	PDF	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
2N4427 equivalent bfr91 Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability	OCR Scan	PDF	PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	PDF	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	PDF	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
PT 2102 ic Abstract: 2N6679 HXTR-2101TXV HXTR-4101 HPAC-70GT HXTR-6106 6105T HXTR-2101 HXTR-6105 HXTR-2001 Text: HEWLETT-PACKARD-. CMPNTS EOE t C3 M4M7SflM 0005512 2 □ 181 t S S ä S General Purpose Transistors HXTR-2001 Chip Technical Data • High Gain 11 dB Typical at 4 GHz • Low Noise Figure 3.8 dB Typical at 4 GHz • High O utput Pow er 20 dBm Typical PldB at	OCR Scan	PDF	44475A4 Q0551S HXTR-2001 2N6679, HXTR-2101, HXTR-2102, HXTR-4101, HXTR-6105, HXTR-6106, at-2102 PT 2102 ic 2N6679 HXTR-2101TXV HXTR-4101 HPAC-70GT HXTR-6106 6105T HXTR-2101 HXTR-6105
PT 2102 ic Abstract: HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003 Text: H E W L E T T - P A C K A R D n CMPNTS EOE D £3 44475Û4 m General Purpose Transistors HXTR-2001 Chip Technical Data Features ^ k laert ; LJ Generic Chip HXTR-2001 Recommended Die Attach and Bonding Procedures Eutectic Die Attach at a stage temperature of 410 ± 10°C under	OCR Scan	PDF	HXTR-2001 2N6679, HXTR-2101, HXTR-2102, HXTR-4101, HXTR-6105, HXTR-6106, HXTR-6106 MIL-S-19500, PT 2102 ic HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003