2N65 MOSFET Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65-C Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

2n65 MOSFEt

Abstract: mosfet 2n65 2N65
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

2n65 MOSFEt

Abstract: 2N65 power mosfet 2N65 2N65L 2N65G-TM3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2 Amps, 650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

2n65 MOSFEt

Abstract: 2N65 mosfet 2n65 2N65G-TM3-T 2N65G-TA3-T QW-R502-370 2N65L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

2N65

Abstract: 2N65 power mosfet 2n65 MOSFEt 25V 1A power MOSFET TO-220 mosfet 2n65 2N65L power mosfet 200A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2 Amps, 650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  TO-220F 1 1 TO-220F1 TO-262 1 1 TO-251 FEATURES * R DS ON = 5.0Ω @ V GS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (C RSS = typical 5.0 pF)

Contextual Info: SSD02N65 2A , 650V , RDS ON 8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

Contextual Info: 3VD238650YL 3VD238650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD238650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.

8N65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices

2n65 MOSFEt

Abstract: 2N65 3VD238650YL mosfet 2n65
Contextual Info: 3VD238650YL 3VD238650YL 高压MOSFET芯片 描述 ¾ 3VD238650YL为采用硅外延工艺制造的N沟道 增强型650V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；

230V AC primary to 12V, 1A secondary transformer

Abstract: 230v dc 5a rectifier diode 13003 charger 230V ac to 5V dc usb charger circuit CM 2N65
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2014 - Jan - 26

Automobile Black Box

Abstract: Power Bank Freescale ACT2801 ACT2802 ACT8945A Atmel ACT8865 power management units high power
Contextual Info: 3Q 2014 Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4

13003 charger

Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26

230V ac to 5V dc usb charger circuit

Abstract: SAMA5 RK3026 s3c2416 charger pad wide
Contextual Info: Contents 1. High Power DC-DC Converter Products ………………….………………………….………….………….….…. 3 1.1 DC-DC Product Selection Guide …….………………………………………………………………………….……. 4

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,