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    2N6308 Price and Stock

    Microchip Technology Inc 2N6308

    NPN TRANSISTOR
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    Microchip Technology Inc 2N6308T1

    POWER BJT
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    Microchip Technology Inc JAN2N6308

    TRANS NPN 350V 8A TO204AA
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    Microchip Technology Inc JANTX2N6308

    TRANS NPN 350V 8A TO204AA
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    Microchip Technology Inc JANTXV2N6308

    TRANS NPN 350V 8A TO204AA
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    2N6308 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6308 Central Semiconductor POWER TRANSISTORS TO-3 CASE Original PDF
    2N6308 Central Semiconductor NPN Silicon Transistor Original PDF
    2N6308 Micro Commercial Components TRANS GP BJT NPN 380V 8A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=8 / Hfe=10-60 / fT(Hz)=5M / Pwr(W)=125 Original PDF
    2N6308 Microsemi NPN POWER SILICON TRANSISTOR - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=8 / Hfe=10-60 / fT(Hz)=5M / Pwr(W)=125 Original PDF
    2N6308 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=8 / Hfe=10-60 / fT(Hz)=5M / Pwr(W)=125 Original PDF
    2N6308 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6308 Central Semiconductor NPN SILICON TRANSISTOR Scan PDF
    2N6308 Diode Transistor Transistor Short Form Data Scan PDF
    2N6308 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6308 Motorola Switchmode Datasheet Scan PDF
    2N6308 Motorola The European Selection Data Book 1976 Scan PDF
    2N6308 Motorola European Master Selection Guide 1986 Scan PDF
    2N6308 Motorola Power Transistor Selection Guide Scan PDF
    2N6308 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6308 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6308 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6308 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6308 Unknown Transistor Replacements Scan PDF
    2N6308 Unknown Transistor Replacements Scan PDF
    2N6308 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2N6308 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6308 Features • • • NPN Silicon Power Transistors For switching power supply applications 700V collector-base breakdown capability


    Original
    PDF 2N6308 300Vdc,

    2N6308

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2N6308 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers,


    Original
    PDF 2N6308 2N6308

    2N6308

    Abstract: No abstract text available
    Text: 2N6308 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6308 O204AA) 31-Jul-02 2N6308

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6308 Features • • • NPN Silicon Power Transistors For switching power supply applications 700V collector-base breakdown capability


    Original
    PDF 2N6308 300Vdc,

    Untitled

    Abstract: No abstract text available
    Text: 2N6308 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6308 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6308 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6308 O204AA) 16-Jul-02

    power BJT

    Abstract: "Power BJT" bjt specifications si 1125 h TRANSISTORS BJT list
    Text: 2N6308 Si NPN Power BJT 9.00 Transistors Transistors Bipolar Si NPN Power Transisto. Page 1 of 2 Enter Your Part # Home Part Number: 2N6308 Online Store 2N6308 Diodes Si NPN Power BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original
    PDF 2N6308 2N6308 com/2n6308 power BJT "Power BJT" bjt specifications si 1125 h TRANSISTORS BJT list

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 498 Qualified Level Devices 2N6306 JAN JANTX JANTXV 2N6308 MAXIMUM RATINGS Ratings Symbol Units VCEO VCBO VEBO IC IB Vdc Vdc Vdc Adc Adc W W C 2N6306 2N6308 250 350 500 700 8.0 8.0 4.0


    Original
    PDF MIL-PRF-19500/ 2N6306 2N6308 2N6306 1000C 1750C, O-204AA) MIL-PRF-19500/498)

    2N6308

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6308 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers,


    Original
    PDF 2N6308 2N6308

    2N6308

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level 2N6306 JAN JANTX JANTXV 2N6308 MAXIMUM RATINGS Ratings Symbol Units VCEO VCBO VEBO IC IB Vdc Vdc Vdc Adc Adc W W C 2N6306 2N6308 250 350 500 700 8.0 8.0 4.0


    Original
    PDF MIL-PRF-19500/498 2N6306 2N6308 2N6306 1000C 1750C, O-204AA) MIL-PRF-19500/498) 2N6308

    2N6306

    Abstract: 2N6308 1000C
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level 2N6306 JAN JANTX JANTXV 2N6308 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current


    Original
    PDF MIL-PRF-19500/498 2N6306 2N6308 1000C 1750C, O-204AA) MIL-PRF-19500/498) 2N6306 2N6308 1000C

    2N6308

    Abstract: 2N6306 1000C
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/498 Devices Qualified Level 2N6306 JAN JANTX JANTXV 2N6308 MAXIMUM RATINGS Ratings Symbol Units VCEO VCBO VEBO IC IB Vdc Vdc Vdc Adc Adc W W C 2N6306 2N6308 250 350 500 700 8.0 8.0 4.0


    Original
    PDF MIL-PRF-19500/498 2N6306 2N6308 2N6306 1000C 1750C, O-204AA) MIL-PRF-19500/498) 2N6308 1000C

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N6308 Features • • • NPN Silicon Power Transistors For switching power supply applications 700V collector-base breakdown capability


    Original
    PDF 2N6308 300Vdc,

    2NG307

    Abstract: 2N6306 ns802 2N6307 2N6308 unitrode 655
    Text: POWER TRANSISTORS S 8 Amp, 700V, Triple Diffused NPN Mesa 2N6308 FEATURES • Collector-Base Voltage: up to 700V • Peak Collector Current: 16A • Rise Time: ^ 600 n s • Fall Time: < 400 ns f @ ' c “ 3A D E S C R IP T IO N These high voltage triple diffused glass


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    PDF 2N6306 2N6307 N6308 600nsl 2N6308 2NG307 ns802 2N6308 unitrode 655

    2N6307 Motorola

    Abstract: 2N6308 2N6306 2N6303 2n6308 motorola
    Text: MOTOROLA SC XSTRS/R F g . . - ï^ N _ - . - 12E D I k3k72S4 OOAIbeb 7 | MOTOROLA 7^ 33 -/3 2N6303 SEMICONDUCTOR TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching


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    PDF k3k72S4 2N6303 2N6306 2N6307, 2N6308 2N6306 2N6307 2N6308 2N6306, 2N6307 Motorola 2N6303 2n6308 motorola

    2n6306

    Abstract: 2N6307 2N6308 npn high voltage transistor 500v 8a NPN Transistor 600V NPN Transistor 600V 2A World transistors and ic vbe 10v, vce 500v NPN Transistor 250V transistor npn 2a
    Text: Datasheet 2N6306 2N6307 2N6308 Central Sem iconductor Corp. NPN Silicon T r a n s i s t o r 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 Case Manufacturers of World Class Discrete Semiconductors DESCRIPTION


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    PDF 2N6306 2N6307 2N6308 2N6306, 2N6307, 2N6308 npn high voltage transistor 500v 8a NPN Transistor 600V NPN Transistor 600V 2A World transistors and ic vbe 10v, vce 500v NPN Transistor 250V transistor npn 2a

    Untitled

    Abstract: No abstract text available
    Text: 2N6308 m \\ S ILIC O N NPN PO W ER TR A N S IS TO R DESCRIPTION: The 2N6308 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE T O - 3 I.*” .1 35 MAXIMUM RATINGS lc 8.0 A Ib 4.0 A V 1 .1 440 ‘ 125 W @ Tc = 25 °C


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    PDF 2N6308 2N6308

    t066

    Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
    Text: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317


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    PDF QD0D443 2N6278 2N6279 2N6280 2N6281 2N6282 750-18k 2N6283 2N6284 t066 2n6354a 2N6285

    2N6306

    Abstract: 2N6307 2n6308 zn63 2N6307 Motorola
    Text: #% • im-_ -4 ^ iy ^ « M > - jw y g .'á MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VO LTAG E NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage Inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching


    OCR Scan
    PDF 2N6306 2N6307, 2N6308 2NS306 2N6307 --2N6306, 2N6308 2N6306 2N6307 zn63 2N6307 Motorola

    2N6308

    Abstract: No abstract text available
    Text: 2N6308 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6308 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS |e 8.0 A Ib 4.0 A VeE 350 V pd is s 125 W @ Te & 25 0C Tj -65 0C to *200 0C Ts t g


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    PDF 2N6308

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


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    PDF O-111 O-5/39 O-114 2N5415

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


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    PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


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    PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375


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    PDF 2N6249 2N6250 2N6251 2N6253 2N6254 2N6248 2N6282 2N6285 2N6547 2N6576