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Rochester Electronics LLC 2N6134 PNP POWER TRANSISTOR
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GTCAP 2N6133
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2N613 Datasheets (132)

Part	Manufacturer	Description	Datasheet Type	PDF
2N613	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N613	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N613	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N613	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N613	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N613	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N613	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N613	Unknown	GE Transistor Specifications	Scan	PDF
2N613	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N613	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N6130	Central Semiconductor	Leaded Power Transistor General Purpose	Original	PDF
2N6130	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N6130	Central Semiconductor	Power Transistors	Scan	PDF
2N6130	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	Scan	PDF

2N6130	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N6130	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
2N6130	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N6130	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6130	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6130	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF

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2N613 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6129 Abstract: 2N6131 2N6132 2N6133 2N6134 2N6130 Text: Inchange Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ・Power amplifier and medium speed switching applications	Original	PDF	2N6129 2N6130 2N6131 O-220 2N6132 2N6133 2N6134 2N6129 2N6130 2N6131 2N6134
2N6133 Abstract: 2N6132 2N6134 2N612 2N6129 2N6131 2n6134 datasheet 2N6130 Text: Inchange Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ・Power amplifier and medium speed switching applications	Original	PDF	2N6132 2N6133 2N6134 O-220 2N6129 2N6130 2N6131 O-220) 2N6132 2N6133 2N6134 2N612 2N6131 2n6134 datasheet
2N6130 Abstract: 2N6131 2N6129 2N6132 2N6133 2N6134 Text: SavantIC Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High power dissipation ·Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ·Power amplifier and medium speed switching applications	Original	PDF	2N6129 2N6130 2N6131 O-220 2N6132 2N6133 2N6134 2N6129 2N6130 2N6131 2N6134
2N6138 Abstract: 2N6116 DSCC 493a 2N6117 2N6118 2N6137 transistor cr Text: INCH-POUND NOTICE OF INACTIVATION FOR NEW DESIGN MIL-S-19500/493A NOTICE 2 5 December 2001 MILITARY SPECIFICATION Semiconductor Device, PNPN, Thysistor, Silicon, Programable Unijunction Transistor , Types 2N6116, 2N6117, 2N6118, 2N6137, 2N6138 JAN, JANTX, JANTXV	Original	PDF	MIL-S-19500/493A 2N6116, 2N6117, 2N6118, 2N6137, 2N6138 MIL-S-19500/493A. 2N6116 DSCC 493a 2N6117 2N6118 2N6137 transistor cr
2N6133 Abstract: 2N6132 2N6129 2N6130 2N6131 2N6134 Text: SavantIC Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High power dissipation ·Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ·Power amplifier and medium speed switching applications	Original	PDF	2N6132 2N6133 2N6134 O-220 2N6129 2N6130 2N6131 O-220) 2N6132 2N6133 2N6131 2N6134
AF306 Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929 Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284	Original	PDF	2N1524 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 AF306 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
KT835B Abstract: B0544 b0202 2SB75 2SB55B 2SB946 2SB61B 2SB61 2N5981 2SB518 Text: POWER SILICON PNP Item Number Part Number Manufacturer Ic Max A V(BR)CEO Min (V) fT hFE Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) PD Max (W) TOper Max (Oe) Package Style I(C) >= 5 A, (Co nt' d) 5 -10 2SB1224 MJF6107 2N61 06 2N6107 40874 2N6134 B0722 2N5872	Original	PDF	2SB1224 MJF6107 2N6107 2N6134 B0722 2N5872 2N6318 MJ6701 2SA663 2SA627 KT835B B0544 b0202 2SB75 2SB55B 2SB946 2SB61B 2SB61 2N5981 2SB518
2N6132 Abstract: 2N6134 2N6133 2N6129 2N6131 2n6134 datasheet 2N6130 Text: Product Specification www.jmnic.com 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ・Power amplifier and medium speed switching applications	Original	PDF	2N6132 2N6133 2N6134 O-220 2N6129 2N6130 2N6131 2N6132 2N6133 2N6134 2N6131 2n6134 datasheet
2N6131 Abstract: 2N6129 2N6130 2N6132 2N6133 2N6134 Text: Product Specification www.jmnic.com 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ・Power amplifier and medium speed switching applications	Original	PDF	2N6129 2N6130 2N6131 O-220 2N6132 2N6133 2N6134 2N6129 2N6130 2N6131 2N6134
Untitled Abstract: No abstract text available Text: One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N6137 ABSOLUTE MAXIMUM RATINOS Anode-to-Catrwde FcMward Voltage, V>IC Anade-to-Cathod* Rewrss Voltage, V/K) Gate-to-CaUiod* Forward Voltftge, V€K	Original	PDF	2N6137 300mW 125-C -55-C 2NI13T
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
2N6136 Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A Text: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum	Original	PDF	AN548A/D AN548A 2N6136 uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A
2SB553Y Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15	Original	PDF	2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
2N6132 Abstract: No abstract text available Text: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 10 A PEAK Ib 3.0 A V ce -40 V P diss 50 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C	OCR Scan	PDF	2N6132 2N6132

2N6137 Abstract: 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX Text: INCH-PÙUNDI MIL-S-19500/493A ER 30 MARCH 1990 SUPERSEDING- MIL-S-19500/493(EL) 22 January 1974 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV	OCR Scan	PDF	MIL-S-19500/493A MIL-S-19500/493 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, MIL-S-19500. T0-18) 2N6137 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX
2N6137 Abstract: UNITRODE U-66 UNITRODE SCR unijunction application note Text: 2N6137 PUTs Military, Planar, TO-18, Hermetic FEATURES • Available as JAN and JANTX types • — 55°C to +125°C Temperature Range for Timing and Oscillator Circuits • U < 10/jA at T = — 55°C lv ^ 40„A at T = -f125°C • Programmable 77, RBB, lP and lv	OCR Scan	PDF	2N6137 10/jA 2N6137 UNITRODE U-66 UNITRODE SCR unijunction application note
UNITRODE U-66 Abstract: No abstract text available Text: 2N6137 PUTs Military, Planar, TO-18, Hermetic FEATU RES DESCRIPTION • Available as JA N and JAN TX types per MIL standard 1 9 5 00 /4 93 • — 55°C to +125°C Tem perature Range for T im in g and O sc illa to r C irc u its • Ip < IOjuA at T = — 55°C	OCR Scan	PDF	2N6137 40juA UNITRODE U-66
2N6137 Abstract: unijunction application note Text: 2N6137 PUTs Military, Planar, TO-18, Hermetic / - a s ' - o FEATURES • Available as JAN and JANTX types per MIL standard 19500/493 • — to -f-125’ 0 Temperature Range for Timing and Oscillator Circuits • l , < l V A a t T = -55»C I , > 40*A at T = +125'C	OCR Scan	PDF	2N6137 2N6I37 MA02172 2N6137 unijunction application note
2n6027 Abstract: 2N602S 2n6027 PUT 2N6028 Text: B a c k to S ilic o n C o n tro lle d R ectifiers 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT	OCR Scan	PDF	2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 2N6116 2n6027 PUT 2N6028
Unijunction Abstract: Programmable unijunction 2N6116 PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit 2N6027 Text: 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT anode anode Gate N Gate N N N cathode cathode G<V " •N	OCR Scan	PDF	2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 2n6116 2n6117 2n6118 Unijunction Programmable unijunction PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit
Untitled Abstract: No abstract text available Text: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK -40 V ce 50 W @ Tc = 25 °C P diss Tj -65 °C t o +150 °C T -65 °C t o +150 °C	OCR Scan	PDF	2N6132 2N6132
Untitled Abstract: No abstract text available Text: MICROSENI CORP/ WATERTOWN SDE » PUTs TBMTTLiB 0G12SMD ETLl • U N I T 2N6137 Military, Planar, TO-18, Hermetic 7 -¿LS~-Ó < FEATURES • Available as JAN and JANTX types per MIL standard 1 9 5 0 0 /4 9 3 • —55°C to -\|-125°C Tem perature Range fo r T im ing and O scilla to r C ircu its	OCR Scan	PDF	0G12SMD 2N6137 10/zA 13471b3 T-25-09
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
2N6256 Abstract: 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	PDF	260MHz rc-25 2SA777 770MHz, 2N6256 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081

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Rochester Electronics LLC 2N6134

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2N613 Datasheets (132)

2N613 Datasheets Context Search

2N6129

2N6133

2N6130

2N6138

2N6133

AF306

KT835B

2N6132

2N6131

Untitled

sn76131

2N6136

2SB553Y

2N6132

2N6137

2N6137

UNITRODE U-66

2N6137

2n6027

Unijunction

Untitled

Untitled

IC HXJ 2038

2N6256