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    2N60 MOSFET Search Results

    2N60 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    2N60 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance


    Original     		PDF QW-R502-053

    2n60

    Abstract: 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60L 2N60G QW-R502-053 2n60 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220 QW-R502-053

    2N60C

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60-C 2N60-C QW-R502-A46 2N60C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60-E 2N60-E QW-R502-974.

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60-C 2N60-C 2N60L-TA3-T 2N60G-TA3-T 2N60L-TF3-T QW-R502-A46

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF QW-R502-053

    2N60G

    Abstract: 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2N60G 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  1 1 TO-220F TO-220 DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220F O-220 O-220F1 O-262 O-252 O-251 QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF QW-R502-053

    2n60

    Abstract: 2N60 TO-251 UTC 2n60 equivalent 2n60 MOSFEt 2N60-TA3-T 2N60L utc 2n60l 2N60-TF3-T 2N60-TM3-T 2N60-TA
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220 QW-R502-053 2n60 2N60 TO-251 UTC 2n60 equivalent 2n60 MOSFEt 2N60-TA3-T 2N60L utc 2n60l 2N60-TF3-T 2N60-TM3-T 2N60-TA

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60-E 2N60-E QW-R502-974

    2N60B

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220 QW-R502-053 2N60B

    2N60E

    Abstract: 600V 2A SOT223 MOSFET N-channel
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60-E 2N60-E QW-R502-974 2N60E 600V 2A SOT223 MOSFET N-channel

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF 2N60-CB 2N60-CB QW-R209-071

    2n60

    Abstract: 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2n60 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC

    2n60 MOSFEt

    Abstract: 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220 O-251 O-220F O-220F1 O-252 QW-R502-053 2n60 MOSFEt 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L

    2n60 MOSFEt

    Abstract: 2n60 to-251 mosfet B2N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2A 600V N-CHANNEL MOSFET 1 TO-251 FEATURES * Typical RDS ON = 3.7Ω @VGS = 10V * Avalanche rugged technology * Low gate charge (typical 9.0 nC) * Low Crss (typical 5.0 pF) * 100% avalanche tested * Excellent switching characteristics


    Original     		PDF O-251 O-252 O-220 O-220F 2N60L 2N60-TA3-0-T 2N60L-TA3-0-T O-220 2N60-TF3-0-T 2N60L-TF3-0-T 2n60 MOSFEt 2n60 to-251 mosfet B2N60

    2n60

    Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
    Text: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF Amps600Volts ET2N60 O-220 O-220F O-251 O-252 O220F 2n60 2N60 TO-252 2n60 MOSFEt ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC DIP Type SMD Type Type Product specification 2N60 TO-220 Features RDS ON = 3.8 @VGS = 10V. Low gate charge ( typical 9.0 nC). Low Crss ( typical 5.0 pF). Fast switching capability. 1 Gate 2 Drain 3 Source Avalanche energy specified Improved dv/dt capability.


    Original     		PDF O-220