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    2N60 APPLICATION Search Results

    2N60 APPLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3059
    		Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    CA3079
    		Rochester Electronics LLC CA3079 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    CA3059-G
    		Rochester Electronics LLC CA3059 - Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications Visit Rochester Electronics LLC Buy
    AM79866AJC
    		Rochester Electronics LLC AM79866A - Physical Data Receiver Visit Rochester Electronics LLC Buy
    TCM3105NL
    		Rochester Electronics LLC TCM3105NL - FSK Modem, PDIP16 Visit Rochester Electronics LLC Buy

    2N60 APPLICATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance


    Original     		QW-R502-053 PDF

    2n60

    Abstract: 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		2N60L 2N60G QW-R502-053 2n60 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		O-220 QW-R502-053 PDF

    2N60C

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		2N60-C 2N60-C QW-R502-A46 2N60C PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		2N60-E 2N60-E QW-R502-974. PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		2N60-C 2N60-C 2N60L-TA3-T 2N60G-TA3-T 2N60L-TF3-T QW-R502-A46 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		QW-R502-053 PDF

    2N60G

    Abstract: 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2N60G 2N60 2N60 TO-251 UTC 2N60L TO-220F utc 2n60l PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		QW-R502-053 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		QW-R502-053 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		QW-R502-053 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		QW-R502-053 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  1 1 TO-220F TO-220 DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		O-220F O-220 O-220F1 O-262 O-252 O-251 QW-R502-053 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		QW-R502-053 PDF

    2n60

    Abstract: 2N60 TO-251 UTC 2n60 equivalent 2n60 MOSFEt 2N60-TA3-T 2N60L utc 2n60l 2N60-TF3-T 2N60-TM3-T 2N60-TA
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		O-220 QW-R502-053 2n60 2N60 TO-251 UTC 2n60 equivalent 2n60 MOSFEt 2N60-TA3-T 2N60L utc 2n60l 2N60-TF3-T 2N60-TM3-T 2N60-TA PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		2N60-E 2N60-E QW-R502-974 PDF

    2N60B

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		O-220 QW-R502-053 2N60B PDF

    2N60E

    Abstract: 600V 2A SOT223 MOSFET N-channel
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		2N60-E 2N60-E QW-R502-974 2N60E 600V 2A SOT223 MOSFET N-channel PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		2N60-CB 2N60-CB QW-R209-071 PDF

    2n60

    Abstract: 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2n60 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC PDF

    2n60 MOSFEt

    Abstract: 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		O-220 O-251 O-220F O-220F1 O-252 QW-R502-053 2n60 MOSFEt 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L PDF

    2n60

    Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
    Contextual Info: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		Amps600Volts ET2N60 O-220 O-220F O-251 O-252 O220F 2n60 2N60 TO-252 2n60 MOSFEt ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F PDF

    2n60b

    Abstract: 2N60A
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


    Original     		O-220 O-220F O-220F1 QW-R502-053 2n60b 2N60A PDF

    2N60B

    Abstract: 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


    Original     		O-220 O-220F O-220F1 QW-R502-053 2N60B 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent PDF