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    2N5872 PNP Search Results

    2N5872 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    2N5872 PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5872

    Abstract: 2N5871
    Text: SavantIC Semiconductor Product Specification 2N5871 2N5872 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base


    Original
    2N5871 2N5872 2N5871 2N5872 PDF

    2N5872

    Abstract: 2N5871 2N5872 pnp
    Text: Inchange Semiconductor Product Specification 2N5871 2N5872 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base


    Original
    2N5871 2N5872 2N5871 115sat 2N5872 2N5872 pnp PDF

    2N5872

    Abstract: No abstract text available
    Text: 2N5872 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N5872 O204AA) 18-Jun-02 2N5872 PDF

    2N5872

    Abstract: No abstract text available
    Text: 2N5872 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N5872 O204AA) 16-Jul-02 2N5872 PDF

    2N5872

    Abstract: No abstract text available
    Text: 2N5872 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N5872 O204AA) 31-Jul-02 2N5872 PDF

    KT835B

    Abstract: B0544 b0202 2SB75 2SB55B 2SB946 2SB61B 2SB61 2N5981 2SB518
    Text: POWER SILICON PNP Item Number Part Number Manufacturer Ic Max A V(BR)CEO Min (V) fT hFE Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) PD Max (W) TOper Max (Oe) Package Style I(C) >= 5 A, (Co nt' d) 5 -10 2SB1224 MJF6107 2N61 06 2N6107 40874 2N6134 B0722 2N5872


    Original
    2SB1224 MJF6107 2N6107 2N6134 B0722 2N5872 2N6318 MJ6701 2SA663 2SA627 KT835B B0544 b0202 2SB75 2SB55B 2SB946 2SB61B 2SB61 2N5981 2SB518 PDF

    2N5872

    Abstract: 2N5871
    Text: TYPES 2N5871, 2N5872 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5873, 2N5874 • 115 Watts at 25°C Case Temperature • 7-A Rated Continuous Collector Current


    OCR Scan
    2N5871, 2N5872 2N5873, 2N5874 2N5871 PDF

    BU4060

    Abstract: BU409 2N5876 BD376 2n5b77 b0375 BD136 BD375 bu406d BU407D
    Text: CRIMSON S E M I C O N D U C T OR INC DE~| 2 5 1MCHfc. ODDOBBS 2514096 CRIMSON SEMICONDUCTOR INC . 99D 00335 T3S-o/ D EPITAXIAL BASH TO-3 continued NPN PNP 2N 3716 2N 5873 2N 5874 2N5877 2N5878 2N6055 2N 6056 2N 6057 2N 6058 2N 6059 2N3792 2N5871 2N5872 2N 5875


    OCR Scan
    5S14D 33-O/ 2N3716 2N3792 2N5873 2N5871 2N5874 2N5872 2N5877 2N5875 BU4060 BU409 2N5876 BD376 2n5b77 b0375 BD136 BD375 bu406d BU407D PDF

    MJ480

    Abstract: motorola MJ480 2n4913 motorola 2N4232 MJ2802 2n4233 2n5878 2n4912 2N5872 MJ481
    Text: MOTOROLA SC BM {DIO DES/OPTO } 6367255 MOTOROLA SC DE|t,3b72SS □OaTTSl DIODES/OPTO 3 ^ 3 7 SILICON POW ER TR A N SISTO R DICE (continued) 2C6316 DIE NO. — NPN LINE SOURCE — PL500.418 NPN 3 ^ D O / 2C6318 / / PNP g51 DIE NO. — PNP LINE SOURCE — PL500.419


    OCR Scan
    3b72SS PL500 2C6316 2C6318 2N3054 2N3713 2N3714 2N2715 2N3716 MJ480 motorola MJ480 2n4913 motorola 2N4232 MJ2802 2n4233 2n5878 2n4912 2N5872 MJ481 PDF

    fast switching pnp transistor 3A 60V

    Abstract: 2N5872 SOLITRON DEVICES
    Text: _ 8 3 6 8 6 0 2 _SOI TT r oni n r v / m r g SOLITRON DEVICES INC tmh TS 95D 02889 DE-J ßBbäbOS ODDEflflT I ÄTTÄ[L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 67 CONTACT METALLIZATION


    OCR Scan
    203mm) fast switching pnp transistor 3A 60V 2N5872 SOLITRON DEVICES PDF

    TIP41/TIP42

    Abstract: 2N5872 2N4897 2N4903 2N4906 2N5069 2N5336 2N5337 TIP121 TIP122
    Text: F A IR C H ILD T R A N S IS T O R S POWER POW ER T R A N S IS T O R S BY Icmax, POLARITY A N D A S C E N D IN G VqeO D E V IC E NO. Polarity NPN PNP Item •c = 5.0 A hFE @ ic • A Min/Max VCEO V Max VCE(sat) @ *C V A Max <T MHz Min(Typ) (Cont’d) p D(Max)


    OCR Scan
    TIP121* TIP126* O-220 2N5069 2N4903 2N4897 2N5336 2N5337 2N491S 2N4906 TIP41/TIP42 2N5872 2N4897 2N5336 2N5337 TIP121 TIP122 PDF

    2N5684

    Abstract: 2N5867 2N5613 PPC 2n5683 2N5678 2N5680 2N5872 2N5615 2n5683 2N5619
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST PNP DEVICE BRIEAKDOV m V O LTAGE s SAT . V O LTA GES M 3 X . hF:E 'c (A) 2.5 Min. Max. 5.5 V CE (V) 5 70 80 5.5 5 2.5 100 80 5.5 5 TO-3 120 100 5.5 2N5621 TO-3 80 60 2N5623 TO-3 100 2N5625 TO-3 2N5627 200


    OCR Scan
    2N5613 2N5615 2N5617 2N5619 2N5621 2N5623 2N5625 2N5627 2N5677 2N5678 2N5684 2N5867 PPC 2n5683 2N5680 2N5872 2n5683 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50


    OCR Scan
    A1331A7 000DQ24 2N5861 2N5864 2N5865 2N5867 2N5868 2N5869 2N5870 2N5871 PDF

    2N5940

    Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
    Text: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP


    OCR Scan
    2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5940 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 PDF

    transistor 40411

    Abstract: 40411 transistor 40411 2N6258 2N5867 2N5872 2N1487 2N1488 2N1489 2N1490
    Text: •Typ«* PNP Compta- VCBHMtS 1C mmt Votte) M a x hn ic / m VCC(SAT) @IC/H VK le n ¥« IS/fe PD@ @VCf TC-2S°C T - lu e ’ Ir (M in-M ax ®A /V ) (V@ A/A) (*@ a / v) 3.0 @1.5/.3 3.0 @1.5/3 1@1.5/.1 1@1.5/.1 3.2@.8/.08 3.5@1.5/4 3.5 @1.5/4 2.5 @1.5/4


    OCR Scan
    Tc-25Â 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N4347 2N3715 2N3791 transistor 40411 40411 transistor 40411 2N6258 2N5867 2N5872 2N1487 2N1488 2N1489 2N1490 PDF

    FT317

    Abstract: FT317B BD220 FT317A ft410 Fairchild FT317 2N5872 bc323 BD223 transistor TIP42
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING V q eo Item DEVICE NO. Polarity NPN PNP @ ic VCE(sat) @ ic hFE v CEO V A A V Max Max Min/Max *T MHz Min(Typ) (Cont’d) pD(Max) W Tc=25°C Package No. •c = 4.0 A Max Continuous (Cont’d)


    OCR Scan
    2N3054 2N5298 O-220 BD222 BD225 2N6122 2N6125 2N4232 FT317 FT317B BD220 FT317A ft410 Fairchild FT317 2N5872 bc323 BD223 transistor TIP42 PDF

    transistor 40411

    Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
    Text: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30


    OCR Scan
    TC-25Â 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N4347 2N3715 2N3791 transistor 40411 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 PDF

    Untitled

    Abstract: No abstract text available
    Text: P I ELECTRONICS INC Eb d F | □□MBS'iS OOOOSEb 7 |^*T-3 3-01 COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333


    OCR Scan
    2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3, TO-39 le MAX = 3-50A V c e o (SUS) = 40-100V PNP Power Transistors NPN Typ. No. conplMMnt W hFE&c/Vc* (mln-màx A/V) VCE(SAT) ©IC/IB (V© A/A) 10 10 10 10 25-90 @1/2 25-90 @1/2 50-150 @ 1/2 50-150 @1/2 1 @4/4


    OCR Scan
    0-100V 2N6330 2N6331 2N6327 2N6328 2N6436 2N6437 2N6438 2N6377 2N6378 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 5T E D • fa5b*m3 0QQQ054 434 « N E S '7 > 3 3 - o / = 3-50A V c E O S U S = 40-1O O V fT = 2-6 MHz PNP TO-3 lc (M A X ) Case 803 Case 804 Type No. NPN Compie* ment VCEO <sus> <V) (M AX) 1C (A) hFE @ IC/VCE {min-max @ A/V) VC£ (SAT)


    OCR Scan
    0QQQ054 40-1O 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 PDF

    2N5286

    Abstract: 2N540S 2N5867 2N5872 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905
    Text: \ P I ELECTRONICS INC Eb DE | DÜMBSTS □□□□2Eb 7 |^T-3 3-Ot COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333


    OCR Scan
    2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N5286 2N540S 2N5867 2N5872 PDF

    mj 1504 transistor

    Abstract: transistor mj 1504 2N5862 MJ 5030 transistor b 1560 mj 1504 2N5680 2N5867 2N4902 2N4903
    Text: ~2~B48352 DIODE TE~£WgISTOR CO INC PNPTO-3 A4 84D D E|EflM fl3SE 0 0 135 D D D D 1 3S D T - fl ¥ ~ DIODE TPi4f\ 515TDR CO. INC. 201) 666-0400 « Telex: 139485 • Outside N Y & NJ area ca ll TO LL FREE 800-526-4581 F A X No. 201*575*5863 Type* NPN Com pJe- VCtO(SUS)


    OCR Scan
    B48352 TMI\I515T0R TC-25Â 2N4901 2N5067 1ffl40 2N4902 2N5068 2N4903 2N5069 mj 1504 transistor transistor mj 1504 2N5862 MJ 5030 transistor b 1560 mj 1504 2N5680 2N5867 PDF

    2N4211

    Abstract: 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210
    Text: ”04 e-C g4Wæ~DlODE T R A M S ïS T O R C O DE |Efl4fl3S2 0 D 0 D 1 3 0 T INC 64 D 00 1 3 0 ~ D T-33-13 ~ D1QDE TRANSISTOR CQ.,1 \IC. (201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 NPNTO-63 PNP


    OCR Scan
    0D0D130 T-33-13 mDDETMI\l515TDRCCLiniC. NPNTO-63 2N1936 2N1937 2N3265 2N3266 2N3597 2N6246 2N4211 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210 PDF

    N5408

    Abstract: SDT3324 N5404 2N5286 2N5609 2N5287 2n5601 2N5153 2N5333 2N5384
    Text: 27 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO f >1 VO LTA G ES @ TYPE NUMBER 5 CASE TYPE V CBO V AMP SILICON PNP V CEO V V EBO V h FE M IN . I M A X . V CE V I >C A V CE s V BE(s) V I V 'c A 1 ’b A Observe (—) Negative Polarity 2N5153


    OCR Scan
    2N5153 2N5286 O-111-I 2N5287 2N5333 2N5384 O-111-1 2IM5404 2IM5405 N5408 SDT3324 N5404 2N5609 2n5601 PDF