2N5680
Abstract: 2N5679
Text: 2N5679 2N5680 HIGH VOLTAGE PNP SILICON TRANSISTOR • 2N5680 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5679, 2N5680 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier
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2N5679
2N5680
2N5680
2N5679,
2N5681
2N5682
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2N5680
Abstract: 2N5679 5679
Text: r Z 7 S G S -T H O M S O N ^7# 2N5679 2N5680 Kffloeœ iniera «® HIGH VOLTAGE PNP SILICON TRANSISTOR . 2N5680 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5679, 2N5680 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case intended for use as drivers for high
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2N5679
2N5680
2N5680
2N5679,
2N5681
2N5682
5679
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2N5680
Abstract: 2N5679 2N5682 P008B
Text: 2N5680 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The 2N5680 is high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal
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2N5680
2N5680
2N5682.
2N5679
2N5682
P008B
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Untitled
Abstract: No abstract text available
Text: PNP Power Silicon Transistor 2N5679 & 2N5680 Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/582 • TO-39 TO-205AD Package Maximum Ratings (TA = 25°C unless otherwise noted) Symbol 2N5679 2N5680 Units Collector - Emitter Voltage Ratings
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2N5679
2N5680
MIL-PRF-19500/582
O-205AD)
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Untitled
Abstract: No abstract text available
Text: 2N5679 2N5680 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) DESCRIPTION 12.70 (0.500) min. 0.89 max. (0.035) The 2N5679 and 2N5680 are silicon epitaxial planar PNP transistors in jedec TO-39 metal
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2N5679
2N5680
2N5679
2N5680
2N5681
2N5682
O-205AD)
10MHz
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JANS2N5416
Abstract: JANTX2N3868 2N3202 2N3203
Text: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S JANTX2N5415 JANTXV2N5415 2N5416 JAN2N5416
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M5151
2N5151L
2N51S3
JANS2N5416
JANTX2N3868
2N3202
2N3203
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2n5680
Abstract: No abstract text available
Text: TECHNICAL DATA PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/ 582 Devices Qualified Level 2N5679 JAN JANTX JANTXV 2N5680 MAXIMUM RATINGS TA = 250C unless otherwise noted Ratings Symbol 2N5679 Collector-Emitter Voltage Collector-Base Voltage
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MIL-PRF-19500/
2N5679
2N5680
O-205AD)
2n5680
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2N5680
Abstract: 2N5679 2N5681 2N5682
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.
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ISO/TS16949
2N5679
2N5680
2N5681
2N5682
25deg
2N5680
2N5679
2N5681
2N5682
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2N5680
Abstract: 2N5679 2N5681 2N5682 PNP TO-39
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 Boca Semiconductor Corp. BSC 2N5681 2N5682
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2N5679
2N5680
2N5681
2N5682
25deg
gm/500
2N5680
2N5679
2N5681
2N5682
PNP TO-39
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TO111 package
Abstract: 2N3774 2N3660 2N3661 2N3740 2N3741 2N3775 2N3776 2N3777 2N3778
Text: 8 E t l ! Ì M ELECTRO N ICS, INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680
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2N3660
2N3661
2N3740
2N3741
2N3774
2N3775
2N3776
2N3777
2N3778
2N3779
TO111 package
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transistor k 2723
Abstract: 2N5680 WCB411 817 transistor
Text: Philips Semiconductors Preliminary specification Silicon planar epitaxial transistor PHILIPS INTERNATIONAL 2N5680 SbE D • 711DôEt. 0 0 4 5 ^ 2 777 ■ PHIN QUICK REFERENCE DATA SYMBOL 7 “ ”^ PARAMETER CONDITIONS collector-base voltage collector-emitter voltage
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2N5680
-TO-39
711002b
T-27-23
transistor k 2723
2N5680
WCB411
817 transistor
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2N5680
Abstract: 2N5679 2N5681 2N5682
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.
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2N5679
2N5680
2N5681
2N5682
25deg
2N5680
2N5679
2N5681
2N5682
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2N5680
Abstract: 2N5679
Text: TECHNICAL DATA PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/582 Devices Qualified Level 2N5679 JAN JANTX JANTXV 2N5680 MAXIMUM RATINGS TA = 250C unless otherwise noted Ratings Symbol 2N5679 Collector-Emitter Voltage Collector-Base Voltage
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MIL-PRF-19500/582
2N5679
2N5680
O-205AD)
2N5680
2N5679
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2N5680
Abstract: 2N5679
Text: 2N5679 2N5680 SEME LAB MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTORS 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54
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2N5679
2N5680
2N5680
2N5681
2N5682
-10mA
-120V
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2N5680
Abstract: 2N5679 2N5682 2N5681
Text: DATA SHEET 2N5679 2N5681 2N5680 PNP 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages
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2N5679
2N5681
2N5680
2N5682
2N5679
100mA,
2N5681
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2n5680
Abstract: 2n5680 motorola 2N5679 MOTOROLA
Text: 2N5415, 2N5416 For Specifications, See 2N3439 Data. 2N5581/82 For Specifications, See 2N2218.A Data. M A X IM U M RATINGS 2N5680 2N5682 Untt 120 Vdc 120 Vdc Symbol 2N5679 2N5681 Collector-Emitter Voltage VCEO 100 Collector-Base Voltage VCBO 100 Emitter-Base Voltage
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2N5415,
2N5416
2N3439
2N5581/82
2N2218
2N5679
2N5680
2N5682
2N5681
2n5680
2n5680 motorola
2N5679 MOTOROLA
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2N5680
Abstract: 2N5681 2N5682 2N5679 TO-39 CASE to ambient
Text: Transys Electronics L I M I T E D PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5681 100 100
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2N5679
2N5680
2N5681
2N5682
25deg
2N5680
2N5681
2N5682
2N5679
TO-39 CASE to ambient
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Untitled
Abstract: No abstract text available
Text: 8 E t l ! Ì M ELECTRO N ICS, INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680
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2N3660
2N3661
2N3740
2N3741
2N3774
2N3775
2N3776
2N3777
2N3778
2N3779
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Untitled
Abstract: No abstract text available
Text: 2N5679 2N5680 2N5681 2N5682 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar
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2N5679
2N5680
2N5681
2N5682
2N5679,
2N5681
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Untitled
Abstract: No abstract text available
Text: P h ilip s S e m ic o n d u c to rs ^ bb53B31 0038177 STT H IA P X Preliminary specification Silicon planar epitaxial transistor 2N5680 N AUER PHILIPS/DISCRETE bBE D QUICK REFERENCE DATA PARAMETER SYMBOL collector current MIN. MAX. UNIT - V - 120 V - 1 A Tcase < 25 °C
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bb53B31
2N5680
bb53T31
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2N5680
Abstract: 4066 IC circuit diagram 16116
Text: 1611600 Feature: • NPN transistors. Applications • General Purpose Switching. • General Purpose Amplifiers. Description: The 2N5680 are high voltage silicon epitaxial planar PNP transistors in JEDEC TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit.
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2N5680
4066 IC circuit diagram
16116
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transistor jc 817
Abstract: 2n5680 WCB410
Text: philips Sem iconductors • ^ 53^31 0 0 HS177 ATT ■ APX Preliminary specification Silicon planar epitaxial transistor 2N5680 b^E D N AP1ER PHIL I P S / D I S C R E T E Q U IC K R E F E R E N C E DATA PARAM ETER SYM BO L MIN. CONDITIONS MAX. ~VCBO “ VcEO
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00HS177
2N5680
PINNING-TO-39
transistor jc 817
2n5680
WCB410
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2N5679
Abstract: 2N5680 2N5681 2N5682
Text: 2N5679 2N5680 SEME LAB MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )
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2N5679
2N5680
2N5679
2N5680
-25mA
-500mA
-50mA
-200mA
-250mA
2N5681
2N5682
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PDF
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2N5680
Abstract: 2N5679
Text: 2N5679 2N5680 SEME LAB MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )
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2N5679
2N5680
2N5680
2N5681
2N5682
-250mA
-500mA
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