| 2N5662J |
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Semico
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Package = TO-5 Level = Jantxv Vceo (V) = 200 Vcbo (V) = 250 Vebo (V) = 6.0 Ic (A) = 2.00 Power (W) ta = 1 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 120 VCE(sat) (V) = 0.40 |
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Original |
PDF
|
| 2N5662JAN |
|
Unitrode
|
International Semiconductor Data Book 1981 |
|
Scan |
PDF
|
| 2N5662JANTX |
|
New England Semiconductor
|
NPN SILICON POWER TRANSISTOR |
|
Original |
PDF
|
| 2N5662JANTX |
|
Unitrode
|
International Semiconductor Data Book 1981 |
|
Scan |
PDF
|
| 2N5662JANTXV |
|
Microsemi
|
NPN POWER SILICON TRANSISTOR |
|
Original |
PDF
|
| 2N5662JANTXV |
|
Unitrode
|
International Semiconductor Data Book 1981 |
|
Scan |
PDF
|
| 2N5662JTXV |
|
New England Semiconductor
|
NPN SILICON POWER TRANSISTOR |
|
Original |
PDF
|
| 2N5662JV |
|
Semico
|
Package = TO-5 Level = Jantxv Vceo (V) = 200 Vcbo (V) = 250 Vebo (V) = 6.0 Ic (A) = 2.00 Power (W) ta = 1 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 120 VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
| 2N5662JX |
|
Semico
|
Package = TO-5 Level = Jantxv Vceo (V) = 200 Vcbo (V) = 250 Vebo (V) = 6.0 Ic (A) = 2.00 Power (W) ta = 1 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 120 VCE(sat) (V) = 0.40 |
|
Original |
PDF
|
