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    2N559 Price and Stock

    Microchip Technology Inc 2N5599

    POWER BJT
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    Microchip Technology Inc 2N5598

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    Rochester Electronics LLC 2N5598

    LOW FREQUENCY SILICON POWER NPN
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    Microchip Technology Inc 2N5597

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    SES 2N5597

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    2N559 Datasheets (118)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N559 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N559 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N559 Unknown Transistor Replacements Scan PDF
    2N559 Unknown GE Transistor Specifications Scan PDF
    2N559 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N559 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N559 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N559 Unknown Vintage Transistor Datasheets Scan PDF
    2N5590 Great American Electronics Silicon NPN power VHF transistor Scan PDF
    2N5590 Microsemi RF & Microwave Transistors Scan PDF
    2N5590 Motorola The European Selection Data Book 1976 Scan PDF
    2N5590 Motorola European Master Selection Guide 1986 Scan PDF
    2N5590 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5590 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5590 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5590 Unknown Transistor Replacements Scan PDF
    2N5590 Unknown Transistor Replacements Scan PDF
    2N5590 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5590 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5590 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N559 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5601

    Abstract: 2N5597 2N5599 2N5603
    Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ;


    Original
    PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    2N5597

    Abstract: 2N5601 2N5599 2N5603
    Text: Inchange Semiconductor Product Specification 2N5597 2N5599 2N5601 2N5603 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ;


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    PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    2N5597

    Abstract: 2N5599 2N5601 2N5603
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.


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    PDF 2N5597 2N5599 2N5601 2N5603 2N5597 2N5599/5601 2N5603

    2N5599

    Abstract: No abstract text available
    Text: 2N5599 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


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    PDF 2N5599 O213AA) 1-Aug-02 2N5599

    2N5597

    Abstract: No abstract text available
    Text: 2N5597 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


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    PDF 2N5597 O213AA) 1-Aug-02 2N5597

    Untitled

    Abstract: No abstract text available
    Text: 2N5597 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    PDF 2N5597 O213AA) 30-Jul-02

    MRF212

    Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413


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    PDF OT-161 92var StR-10 OT-123var O-220 MRF212 b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603

    2N5598

    Abstract: No abstract text available
    Text: 2N5598 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N5598 O213AA) 1-Aug-02 2N5598

    2N5598

    Abstract: 2N5600 2N5602 2N5604 5602 5604
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.


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    PDF 2N5598 2N5600 2N5602 2N5604 2N5598 2N5600/5602 2N5604 5602 5604

    2N5598

    Abstract: 2N5600 2N5604 2N5602 5604
    Text: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ;


    Original
    PDF 2N5598 2N5600 2N5602 2N5604 2N5598 2N5600/5602 2N5604 5604

    Untitled

    Abstract: No abstract text available
    Text: 2N5599 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    PDF 2N5599 O213AA) 30-Jul-02

    2N5600

    Abstract: 2N5598 2N5602 2N5604 5602 5604
    Text: Inchange Semiconductor Product Specification 2N5598 2N5600 2N5602 2N5604 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ;


    Original
    PDF 2N5598 2N5600 2N5602 2N5604 2N5598 2N5600/5602 2N5604 5602 5604

    SDT69504

    Abstract: 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333
    Text: Device Type 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333 2N5597 SDT3501 SDT3502 SDT3503 SDT3504 SDT3505 SDT3506 SDT3507 SDT3508 SDT3509 SDT3510 SDT3511 SDT3512 SDT3513 SDT3514 SDT3515 SDT3516 SDT3550 SDT3551 SDT3552 SDT3553 SDT3554 SDF3575


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    PDF 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333 2N5597 SDT69504 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333

    Untitled

    Abstract: No abstract text available
    Text: 2N5598 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N5598 O213AA) 30-Jul-02

    2N5591

    Abstract: 2N5590 2N5589 transistor 2N5589 2n5591_
    Text: S G S-"THOMSON Q5C Q | ?cia clS 3 7 T-JS'-u 0 0 0 0 jb fl2 SOLID STATE MICROWAVE 2N 5589 2N 5590 2N5591 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, PA 18936 • 215 362-8500 ■ T W X 510-661-7299 3 W /1 0 W /2 4 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION:


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    PDF PA18936 2N5589 2N5590 2N5591 MT-71 N5590 transistor 2N5589 2n5591_

    b25-12

    Abstract: 2N5591 B25-12 transistor "Frequency Multipliers" 4 watt VHF MT-72 20W power transistor
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5591/B25-12 Silicon NPN power VHF transistor 2N55591/B25-12 is designed for use 12.6 volt power amplifier, frequency multipliers and oscillator applications in industrial and commercial equipment. Especially suited for AM/FM land and mobile operation.


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    PDF 2N5591/B25-12 2N55591/B25-12 MT-72 b25-12 2N5591 B25-12 transistor "Frequency Multipliers" 4 watt VHF 20W power transistor

    2N5590

    Abstract: 2n5591 2N559 2N5589 SD1216 transistor 2N5589 SD1214 2n558 2N556 M135
    Text: Microsemi P rog resa P o w e re d b y T ech no log y Montgomeryville, PA 18936 Tel: 215 631-9840 2N5589 2N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.230MHZ FM MOBILE APPLICATIONS FREQUENCY 175MHz VOLTAGE 13.6 V POWER OUT 8 TO 25W HIGH POWER GAIN HIGH EFFICIENCY


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    PDF 2N5589 2N5590/2N5591 230MHz 175MHz SD1212-02 SD1214-12 2N5590 SD1216 2N5591 2N5590 2n5591 2N559 2N5589 transistor 2N5589 SD1214 2n558 2N556 M135

    2N5539

    Abstract: No abstract text available
    Text: m m lC fO 2 140 C o m m e rc e Drive t f f l M o n tg o m ery vilfe, PA S G Tei; {215 8 3 1-3 840 18936- ." * * , ' 1 ' : ^ 2 N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.,230MHz FM MOBILE APPLICATIONS • FREQUENCY 175WH:-: » VO LTAfif. i.TSV « POW ER OUT


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    PDF N5590/2N5591 230MHz 2N5590 2N5589/2N5590/2N5591 2N5539

    2N4071

    Abstract: 2N6277 JANTXV 2N5626
    Text: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J*2N5664*' 2H5665*2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300


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    PDF 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N4071 2N6277 JANTXV 2N5626

    2n5430

    Abstract: No abstract text available
    Text: A POW ERHOUSE BIPOLAR VCE sat max VOLTS 2N4864 120 2.0 50-150 0.5/5.0 0.2 0.5/0.05 2N5598 60 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5600 80 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 2N5602 80 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5604 100 2.0 30-90 1.0/5.0 0.85 2.0/0.2 *2N5606


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    PDF O-213 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2n5430

    B12-12

    Abstract: 2N5590 B1212 MT-72 MT-72 package 32fl02
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5590/B12-12 Silicon NPN power VHF transistor 2N5590/B12-12 is designed for amplifier, frequency multipliers and oscillator applications in industrial and commercial equipment. Especially suited for AM/FM land and mobile operation.


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    PDF 2N5590/B12-12 2N5590/B12-12 MT-72 32fl02Â 0000DQ2 B12-12 2N5590 B1212 MT-72 package 32fl02

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-213 TO-66 'c VOLTS AMPS hFE min/max V CE (sat) max VOLTS •c @ 'b A A 2N4864 120 2.0 50-150 0.5/5.0 0.2 0.5/0.05 2N5598 60 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5600 80 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 2N5602 80 2.0 70-200


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    PDF O-213 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612

    Untitled

    Abstract: No abstract text available
    Text: [j^ [D tUJ TF ©ÄTTM,© LOW P O W E R FIELD EFFE C T T R A N S IS T O R S L@W [ M © D © [ 1  I l [ p y i F D [ l [ ^ s ' M ° © [ n l  [ M [ M I [ L [ F i T T É Type Number Case Style (T O -) Geometry BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off)


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    PDF 2N3684 2N3684A 2N3685 2N3685A 2N3686 2N3686A 2N3687 2N3687A 2N4867 2N4867A

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF