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    2N5308A Search Results

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    2N5308A Price and Stock

    Central Semiconductor Corp 2N5308 APM TIN/LEAD

    Transistor Darlington NPN 40V 300mA 3-Pin TO-92 Ammo Pack - Ammo Pack (Alt: 2N5308 APM TIN/LEA)
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    Avnet Americas 2N5308 APM TIN/LEAD Ammo Pack 2,000
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    Mouser Electronics 2N5308 APM TIN/LEAD
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    Central Semiconductor Corp 2N5308 APP TIN/LEAD

    Transistor Darlington NPN 40V 500mA 3-Pin TO-92 Ammo - Ammo Pack (Alt: 2N5308 APP TIN/LEA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N5308 APP TIN/LEAD Ammo Pack 2,000
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    Mouser Electronics 2N5308 APP TIN/LEAD
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    Central Semiconductor Corp 2N5308 APM PBFREE

    Transistor Darlington NPN 40V 300mA 3-Pin TO-92 Ammo Pack - Ammo Pack (Alt: 2N5308 APM PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N5308 APM PBFREE Ammo Pack 2,000
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    Mouser Electronics 2N5308 APM PBFREE
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    Central Semiconductor Corp 2N5308 APP PBFREE

    Transistor Darlington NPN 40V 500mA 3-Pin TO-92 Ammo - Ammo Pack (Alt: 2N5308 APP PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N5308 APP PBFREE Ammo Pack 2,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.48201
    		Buy Now
    Mouser Electronics 2N5308 APP PBFREE
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    2N5308A Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5308A Allegro MicroSystems Bipolar transistor Scan PDF
    2N5308A Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    2N5308A General Electric Semiconductor Data Book 1971 Scan PDF
    2N5308A General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N5308A General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. Scan PDF
    2N5308A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5308A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5308A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5308A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5308A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5308A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5308A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5308A Sprague Semiconductor Data Book 1977 Scan PDF
    2N5308A Sprague NPN Small-signal transistor Scan PDF

    2N5308A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306

    D38S1-4

    Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93

    D39C4

    Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308
    Text: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.


    OCR Scan     		PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5307 GES5308

    2N3901

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    2N4424

    Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech GES6220

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    quan-tech

    Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan     		PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 2N5307, quan-tech D39C4 GES6220

    TRANSISTOR 2n3901

    Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 TRANSISTOR 2n3901 2N390 pnp 2N3901

    ES5448

    Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40MBIENT 9ES6003 ES5448 GES6220

    TP107B

    Abstract: 2N5133 TP107A 2N3565 TP109B tp107 TP252A TP251B MPS-A13 pnp 2N5138
    Text: Q Q D f l O I I C EconolineR Plastic-Molded 0I KHV UC Silicon SEPT" Transistors SMALL-SIGNAL LOW NOISE AMPLIFIERS P O LA R IT Y Pd 25 C mW 2N3565 2N5133 2N5138 2N 5376 2N5377 2N5378 2N 5379 NPN NPN PNP NPN NPN PNP PNP 625 625 625 500 500 500 500 30 20 30


    OCR Scan     		PDF 2N3565 2N5133 2N5138 2N5377 2N5378 MPS5308A 2N5306 2N5306A 2N5307 2N5308 TP107B TP107A TP109B tp107 TP252A TP251B MPS-A13 pnp

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 ges6011, 6ES60II GES6001 GES6002

    2N5232

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232A 2N5249A 2N5305 2N5306 2N5309
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 P A C K A G E Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5232, 2N5305 2N5306 2N5309

    2N3856

    Abstract: 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3856 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    IN733A

    Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
    Text: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano


    OCR Scan     		PDF 2N582 2N5828 2N5828A 2N5829 2N5830 2N5831 2N5832 2N5833 2N6000 2N6004 IN733A 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    800-0400

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 VCE (sat) Max. @ lc (m A ) 40 00 00 60


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40LECTOR-BASE GES6007 800-0400 GES6001

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON S IG N A L TRAN SIS TO R S G E N E R A L PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005


    OCR Scan     		PDF to-92 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 QES6004- GES6001 GES6002

    2N3901

    Abstract: 2N5356 GES93 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVC eo @ 10mA V h FE Min.-Max. @ IC,V C E (V> (V) Max. Typical (MHz) Ccb@10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100mA, 2N3901 2N5356 GES93

    D38S5

    Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,


    OCR Scan     		PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S3' D38S5 hitachi 16 X 2 lcd 2N5232A

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10m A V Min. I I • m 1 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000 GES6001 GES6002 40 40 25 25 25 50 00 00 OB WS 500 800 300 300 500 25 40 40 40 40 00 00 oo 00 00


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002

    TR 3904 HFE 100-300 SM

    Abstract: itt 3904 2N 3904 h2 c 2n3904, itt GES5822 GES5823 GES5824 GES5825 GES5826 GES5827
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10m A V Min. 1I •I m 00 00 60 00 «0 200 200 120 200 300 GES5827 NPft GES5828 GES6000 N M GES6001 GES6002 50 00 00 OB WS 500 800 300 300 500 NP» mp un 40 40 25 25 25 PHP NP* WM»


    OCR Scan     		PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 r-04mi TR 3904 HFE 100-300 SM itt 3904 2N 3904 h2 c 2n3904, itt