2N5302 TRANSISTOR Search Results

2N5301

Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 3 J CD H m C < < — r* m « in w FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 2N5301, 2N5302 DESIGNED FOR COMPLEMENTARY USE WITH 2N4398, 2N4399 I. g w S On 200 W at 25°C Case Temperature

2N5302

Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
Contextual Info: ÆàMOS PEC NPN SILICON HIGH-POWER TRANSISTORS NPN General Purpose use in power amplifier and switching circuit applications. 2N5301 2N5302 2N5303 FEATURES: * DC Current Gain Specified- 1.0 to 30 A * Low Collector-Emitter Saturation Voltage v CE<sat = °-75 v M ax) @ lc = 10 A - 2N5301, 2N5302

2N5302

Abstract: 2N5303 jantx 2n5302 adc ic 1000C
Contextual Info: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage

2N5302

Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage

Contextual Info: Microsemi NPN Transistors Part Number JAN2N633S JANS2N6338 JANTX2N6338 JANTXV2N6338 JAN2N6339 JANS2N6339 JANTX2N6339 JANTXV2N6339 JAN2N6340 JANS2N6340 JANTX2N6340 JANTXV2N6340 JAN2N6341 JANS2N6341 JANTX2N6341 JANTXV2N6341 2N6686 2N6687 2N5301 2N5302 2N6326

2N5302

Contextual Info: 2N5302 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER ! ! High Current Capability TO-3 High Power Dissipation ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage

TIP 110 transistor

Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature

Contextual Info: 2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc

2N5301

Abstract: 2N5302 2N5303 2n53
Contextual Info: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4398/4399/5745 ·Low collector/saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching

2N5301

Abstract: 2N5302 2N5303 RCA-2N5301
Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power

TRANSISTOR 2n5302

Abstract: 2N5302
Contextual Info: ON Semiconductort High-Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector–Emitter Saturation Voltage – 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc

2N5301

Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
Contextual Info: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching

BU108

Abstract: 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS 200 WATTS • High Collector–Emitter Sustaining Voltage —

Contextual Info: ON Semiconductort High−Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector−Emitter Saturation Voltage − 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc

2N5301

Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
Contextual Info: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS

2N5301

Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
Contextual Info: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS

2n5253

Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
Contextual Info: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321

Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ | ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power

2N5301

Abstract: 2N5302 2N5301-1
Contextual Info: 2N5301 2N5302 200 WATT NPN SILICON POWER TRANSISTOR Solid State Devices Incorporated 1 4 830 V alley V iew Avenue La Mirada, California 9 0 6 3 8 Telephone 213 9 2 1 -9 6 6 0 TW X -910-5 83-480 7 Xooa.^.s" • H F E .1 5 -6 0 @ 15 Amps

Contextual Info: 2N5302+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5302+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5302+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ]> High-Current High-Power High-Speed N-P-N Power Transistors • 43D2271 GGHOiiS^ 387 H H A S _ TERMINAL DESIGNATIONS F e a tu m : ■ Specification to r /ife and VcE saf up to 30 A ■ Current gain-bandw idth product h = 2 MHz min. a t 1 A