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    2N5210 C Search Results

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    2N5210 C Price and Stock

    NTE Electronics Inc 2N5210

    Transistor NPN Silicon Bvceo=50V IC=50ma TO-92 Case Low Noise High Gain General Purpose Amplifier
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    2N5210 C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5210

    Abstract: No abstract text available
    Text: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol


    Original     		2N5210/MMBT5210 OT-23 2N5210 O-92-3 2N5210BU 2N5210NMBU 2N5210TA 2N5210TAR 2N5210TF PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- '0 EBC ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		2N5209 2N5210 O-92A 2N5209, 2N5210 2N5086, 2N5087- 350mW BOX69477 2N5209 PDF

    transistor 2N5210

    Abstract: 2N5209 2N5210
    Text: DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS TA=25°C


    Original     		2N5209 2N5210 2N5209 2N5210 transistor 2N5210 PDF

    2N5210

    Abstract: transistor 2N5210 2N5209
    Text: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage


    Original     		2N5209/D 2N5209 2N5210 226AA) 2N5209/D* 2N5210 transistor 2N5210 2N5209 PDF

    2n5210 equivalent

    Abstract: 2n5210 2N5210 datasheet 2n5088 transistor 2N5088 2N5210 c
    Text: 2N5210 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*


    Original     		2N5210 2N5088 2n5210 equivalent 2n5210 2N5210 datasheet 2n5088 transistor 2N5210 c PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		2N5210 625mW 2N5088 100/iA, 100KHZ 20/iA 22KSJ PDF

    2N5769

    Abstract: 2N5219 2N5225 2N5172 2N5209 2N5210 2N5220 2N5224 2N5232 2N5232A
    Text: TO-92 Plastic Package Transistors NPN Maxinnum R atings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) *c Po (W) (A) @Tc=25” ^C BO ^CEO ^EBO (V) Min (V) Min (V) Min 2N5172 25 25 5 0.4 2N5209 50 50 5 0.625 0.0. 2N5210 50 50 5


    OCR Scan     		2N5172 O-92-1 2N5209 2N5210 2N5219 2N5830 2N6427 2N6515 2N6516 2N5769 2N5225 2N5220 2N5224 2N5232 2N5232A PDF

    LS 5087

    Abstract: a5t5086
    Text: TYPES 2N5086. 2N5087, A5T5086, A5T5087 P-N P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 Î. M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-LEVEL, LOW-NOISE AUDIO AMPLIFIER APPLICATIONS • For Complementary Use with N-P-N Types 2N5209, 2N5210, A5T5209, A5T5210


    OCR Scan     		2N5086. 2N5087, A5T5086, A5T5087 2N5209, 2N5210, A5T5209, A5T5210 100-mil LS 5087 a5t5086 PDF

    2SA564A-P

    Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
    Text: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A


    OCR Scan     		2N5138 2N5172 O-92B 2N5209 O-92A 2N5210 2N5219 2IM5223 2SA564A-P 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2SA1715 2SC372 PDF

    Untitled

    Abstract: No abstract text available
    Text: D is c re te P O W E R & S ig n a l Technologies e iM iP O N O iJ C T a « - 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1|aA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    OCR Scan     		2N5210 2N5088 PDF

    2N5210A

    Abstract: a5t5209 52-10A ic 5209 2N5209
    Text: TYPES 2N5209, 2N5210, A5T5209, A5T5210 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 2 2 , J U N E 1 9 7 3 S ILE C T t T R A N SISTO R S* FOR LO W -LEVEL, LOW-NOISE A U D IO A M P L IF IE R A PPLICATIO N S • For Complementary Use with P-N-P Types 2N 5086, 2IM5087, A 5T 5086, A 5T5087


    OCR Scan     		2N5209, 2N5210, A5T5209, A5T5210 2IM5087, 5T5087 100-mil 2N5210A a5t5209 52-10A ic 5209 2N5209 PDF

    2N5210

    Abstract: 2N5209 2N5210 4 pin 2N5210 c N5209
    Text: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2 N 52 09 2 N 5 2 10 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage VCEO 50 Vdc C o lle c to r-B a s e Voltage


    OCR Scan     		2N5209/D N5209 2N5210 O-226AA) 2N5209 2N5210 4 pin 2N5210 c PDF

    2N5210

    Abstract: 2n5209
    Text: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2 N 52 09 2 N 5 2 10 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage VCEO 50 Vdc C o lle c to r-B a s e Voltage


    OCR Scan     		2N5209/D O-226AA) 2N5210 2n5209 PDF

    ZTX109

    Abstract: 2N5210 2N3906 transistor 2N5210 2N5086 2N5087 2N5209 BC550P BC560P BCY65EP
    Text: TABLE 5 : NPN LOW NOISE The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. Max VcEisat at at Max Type Max. Noise Figure at Min fi­ hFE


    OCR Scan     		BCY65EP BCY77P 2N5209 30-15k 2N5086 2N5210 2N5087 ZTX331 ZTX531 BC550P ZTX109 2N3906 transistor 2N5210 2N5086 2N5087 BC560P PDF

    low noise transistors

    Abstract: BC550P ZTX109 2N3804 2N5086 2N5087 2N5209 2N5210 Scans-00106609 BCY65EP
    Text: NPN LOW NOISE T A B LE 5 - NPN SILICO N PLANAR LOW N O ISE T R A N S IS T O R S The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. The devices are listed in order of decreasing collector/emitter breakdown voltage V CE0 ,


    OCR Scan     		BCY65EP MPS2484 30-15k BCY77P 2N5209 2N5210 ZTX331 BC550P /2N3904 low noise transistors ZTX109 2N3804 2N5086 2N5087 Scans-00106609 PDF

    ztx214 Transistor

    Abstract: 2N3904 70570 BC415P 2n4123 transistor ZTX109 DSAIH000142303. transistor 2N5210 BS3934
    Text: ZETEX SEMICOND UCT ORS IbE D • ^70570 GGObam 5 ■ ZETB E-LINE SPECIFICATIONS ~ ^ „ I - c °l audio pre-amplifiers as well as universal applications The transistors on this page are characterised for low noise, low level amplification and are ideally suited for


    OCR Scan     		BS3934 SO-94 SO-95 SO-97 SO-96 TQ-202 ztx214 Transistor 2N3904 70570 BC415P 2n4123 transistor ZTX109 DSAIH000142303. transistor 2N5210 PDF

    2N6429

    Abstract: J 2N2484 mpsa18 2N642B MPS-A09 2N2484 motorola 2N2483 SILICON SMALL-SIGNAL DICE MPS-6571 MPSA09
    Text: MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC ^ * . * 3' . 34 DE J t>3fc.725S 0037T7t. □ 34C DIODES/OPTO 37976 1 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C2484 DIE NO. — NPN LINE SOURCE — DMB102 This die provides performance similar to that of the following device types:


    OCR Scan     		0037T7t. DMB102 2N2483 2N2484 2N5089 2N5209 2N5210 2N642B 2N6429 MMCM2484 J 2N2484 mpsa18 MPS-A09 2N2484 motorola SILICON SMALL-SIGNAL DICE MPS-6571 MPSA09 PDF

    low noise transistors

    Abstract: 2N3904 ZTX109 ZTX239 2N4401 2N4403 ZTX530 BC213P BCY59P ZTX108
    Text: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30


    OCR Scan     		ZTX531 ZTX331 BCY79P 1000f BCY59P ZTX213 ZTX108 BC213P BC183P 2N4403 low noise transistors 2N3904 ZTX109 ZTX239 2N4401 ZTX530 BCY59P ZTX108 PDF

    MPSA18

    Abstract: PN2484 2N5210 national 2N5088 2N5089 2N5210 2N5961 2N5962
    Text: This I Material cr aIn Copyrighted a aa .rr ÜJ a xtn Cb » % /^ Device No. MPSA18 -a -v j •nJ By Its I National S e m Case Style TO-92 92 i c o n V CBO VCE0 ^EBO (V) Min (V) Min (V) Min 45 45 6.5 d u c t o 'cBO <"A) « Max 50 V m 30 400 500 500 500 ' '


    OCR Scan     		MPSA18 2N5088 2N5210 2N5961 2N5962 PN2484 2N5210 national 2N5089 PDF

    ZTX109

    Abstract: 2N5086 2N5087 2N5209 2N5210 BC550P BC560P BCY65EP BCY71P BCY77P
    Text: TABLE 6 : PNP LOW NOISE The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. Type V CEO Max • Max VCE satl at 'c V h FE Min Max 'c 'c 'c


    OCR Scan     		BCY77P BCY65EP 2N5086 30-15k 2N5209 2N5087 2N5210 ZTX531 ZTX331 ZTX109 2N5209 2N5210 BC550P BC560P BCY65EP BCY71P PDF

    2N3904

    Abstract: ztx51 MPS3645 2N4401 2N4403 BC183P BC213P BCY59P BCY79P ZTX108
    Text: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30


    OCR Scan     		ZTX531 ZTX331 BCY79P 1000f BCY59P ZTX213 ZTX108 BC213P BC183P 2N4403 2N3904 ztx51 MPS3645 2N4401 BC183P BCY59P ZTX108 PDF

    SE4021

    Abstract: BC207B 2N4248 2N4249 BC207 pnp BC521 BC207 BC526 BC204 EN3962
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING V q eq (Cont’d) DEVIC EN O . Pola rity PNP Item NPN VCEO V Min 1 PN4250 40 a 2N4248 40 3 hFE hFE @ >c mA Mln/Max 250/700 50/- @ ic mA NF dB Max @f kHz NF dB Max


    OCR Scan     		PN4250 2N4248 O-106 PN4248 BC207 BC204 BC207A BC204A SE4021 BC207B 2N4249 BC207 pnp BC521 BC526 EN3962 PDF

    2SC1815GR

    Abstract: 2SC1815BL 2N3693 2SC1815-GR 2SC1815-BL 2N5209 2N5210 2N5232 2N5232A 2SC1815
    Text: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Typ* No. 2N5209 VC80 VCE0 VEBO (V) Mn (V) Min (V) Min 50 50 5 'cso (UA) Max 0.050 VC8 (V) hFE Min 35 50 50 5 0.050 35 9 Max Cob 'c & VCE VCE(SH| ®^BE (Sal) ® •c Ices 0 vce (mA) (uA) (V) (mA) (V) (V) (V) (Pf) Min Max


    OCR Scan     		2N5209 2N5210 2N5232 O-92-1 2N5232A 2SC3114R 2SC3114S 2SC1815GR 2SC1815BL 2N3693 2SC1815-GR 2SC1815-BL 2N5232 2N5232A 2SC1815 PDF

    SE4010

    Abstract: SE4002 2N3565 SE4001 SE-4002 mps*6520 MPS-6571 2N5133 SE401 MPS3708
    Text: TRANSISTO RS—SMALL SIGNAL NPN LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTO RS BY A SCEN D IN G VCEO PLASTIC PACKAGE V CEO NF dB @ f kHz M AX h FE ^FE NF VOLTS MIN h lF E MIN - M A X 2N5133 18 60 - 1000 @ 1.00 TO-106 MPS6571 20 250 - 1000 @ 0.10 TO-92 2N4968


    OCR Scan     		2N5133 MPS6571 2N4968 2N5089 MPS6521 MPS6520 2N3565 SE4010 SE4002 SE4001 SE-4002 mps*6520 MPS-6571 SE401 MPS3708 PDF