2N5172 TRANSISTOR Search Results

Contextual Info: 2N5172 2N5172 General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-07-26 Power dissipation Verlustleistung 18 9 16 E CB 2 x 2.54 Dimensions / Maße [mm] 625 mW Plastic case Kunststoffgehäuse

2N5172

Contextual Info: 2N5172 NPN 2N6076 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5172 and 2N6076 are complementary silicon small signal transistors designed for general purpose applications. MARKING: FULL PART NUMBER

2n5172

Contextual Info: 2N5172 2N5172 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-15 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca.

Contextual Info: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol

2N5172

Abstract: 10D3
Contextual Info: 2N5172 2N5172 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-15 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca.

2N5172

Contextual Info: 2N5172 2N5172 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

2N5172

Abstract: CBVK741B019 F63TNR PN100 PN2222N 2n5172 transistor
Contextual Info: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol

"to-98" package

Abstract: MPS5172 2N5172 2N6076 PN5172 2n5172 to-92 TO-98 RCA 2N
Contextual Info: G E SOLI» STATE DE | 3075DÛ1 0 0 1 7 C]3T 1 | r* s ' -Signal Transistors 2N5172, MPS5172, PN5172,2N6076 Silicon Transistors TO-92 TO-98

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

Contextual Info: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643

transistor 2n5172

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR AMPLIFIER TRANSISTOR 2N5172 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

2N5172

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5172 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current A ICM : 0.5 Collector-base voltage

2N5172

Contextual Info: 2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 General Purpose Amplifier Transistor G H Emitter Collector Base J A D Collector

2n5172 transistor

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS

2N5172

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5172 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: Bipolar Transistors Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222

2N5172

Abstract: DS21602
Contextual Info: 2N5172 NPN SMALL SIGNAL TRANSISTOR Features High Current Gain 600 mW Power Dissipation KM M-H TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking: Type Number

Contextual Info: SynSEMi T O -92 Plastic Encapsulate Transistors 5YN5EMI SEMICONDUCTOR 2N5172 TRANSISTOR NPN TO — 92 FEATURES Power dissipation 1. EMITTER Po, : 0.625 Collector current W Icm A • 0.5 oo^ (Tamb=25 *C) 2. COLLECTOR 3. BASE Collector base voltage V (br x b o : 25 V

marking EB 202 transistor

Contextual Info: 2N5172 VISHAY NPN SMALL SIGNAL TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features High Current Gain 600 mW Power Dissipation TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram

2n5172

Contextual Info: 2N5172 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • High Current Gain 600 mW Power Dissipation E A TO-92 B Dim Min Max A 4.32 4.83 Mechanical Data • • • • • C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208

2N5172

Abstract: DS21
Contextual Info: 2N5172 visH A Y NPN SMALL SIGNAL TRANSISTOR /l i t e w i i / POWERSEMICONDUCTOR I Features • • High Current Gain 600 mW Power Dissipation TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208

"to-98" package

Abstract: 2N5172
Contextual Info: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5172 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 25 V Operating and storage junction temperature range