2N5088 APPLICATION NOTE Search Results

2N5088 MOTOrola

Abstract: 2N5089 MOTOROLA 2N5088 equivalent 2n5088 transistor 2N5089 2N508 2N5088
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5088 2N5089 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N508 8 2N508 9 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

2N2089

Abstract: 2N2089RLRAG 2n5088 application note 2N5088 equivalent 2n5088 transistor 2N2089RLRA 2N2089RLRE 2N2089RLREG 2N5088 2N5088RLRA
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5088 2N5089 Collector − Base Voltage Vdc 30 25 VCBO 2N5088

2N5088 equivalent

Abstract: 2n2089 2N5088G 2N5088 2n5088 transistor 2n5088 application note 2N2089RLRA 2N2089RLRAG 2N2089RLRE 2N2089RLREG
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5088 2N5089 Collector − Base Voltage Vdc 30 25 1 EMITTER

2N5088 equivalent

Abstract: 2N5088 2n5088 transistor 2N5089
Contextual Info: ON Semiconductort Amplifier Transistors 2N5088 2N5089 NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous

2N5088G

Abstract: 2N5088 equivalent 2n5088 transistor 2N5089 2n2089 2N2089RLRE 2N5088 2N5089G 2n5088 application note
Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR 2 BASE MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO 2N5088 2N5089 Collector − Base Voltage Vdc VCBO

Contextual Info: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR 2 BASE MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO Collector − Base Voltage Vdc VCBO Vdc 35 30 2N5088

2N5088 equivalent

Abstract: 2N5088 2N5089
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION

2N5089

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage

2N5088 Cross Reference

Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2N5088 equivalent

Abstract: 2N5088 2N5089
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage

transistor 2n5088 equivalent

Abstract: transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs transistor j201 siliconix fet Siliconix "low noise jfet"
Contextual Info: AN106 Siliconix LowĆNoise JFETs Ċ Superior Performance to Bipolars Introduction D Junction field effect transistors continue to outperform the best bipolar transistors on lowĆfrequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET

2N5088 equivalent

Abstract: siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393
Contextual Info: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET

2N5088BU

Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

N CHANNEL jfet Low Noise Audio Amplifier

Abstract: jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404
Contextual Info: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET

2N5089

Abstract: 2N5088 equivalent 2n5088 transistor c 5088 2N5089 power 2N5088 MMBT5088 MMBT5089 4973P 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2N5088 Fairchild

Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

transistor fn 1016

Abstract: N CHANNEL jfet Low Noise Audio Amplifier siliconix fet JFET APPLICATIONS JFETs Junction FETs Siliconix AN106 jfets 2N4393 2N5088 equivalent jfet to 92
Contextual Info: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET

2n5089 spice

Abstract: 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

TIC 1160

Abstract: 2N5088 equivalent 2n5088 transistor 2N5088 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2N5088

Abstract: transistor 2N5088 2N5088 equivalent 2n5088 transistor 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2N6428

Abstract: as dc hfe nv 2N6428A 2N5088
Contextual Info: 2N6428/6428A 2N6428/6428A Amplifier Transistor • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Infrared Sensing and Data Transmission

Abstract: xr567 MRD360 MC145030 MTP3055EL MC34072 MRD821 photo transistor mrd360 mc145026 XR-567
Contextual Info: AN1016/D Infrared Sensing and Data Transmission Fundamentals Prepared by: Dave Hyder ON Semiconductor Field Applications Engineer http://onsemi.com APPLICATION NOTE Many applications today benefit greatly from electrical isolation of assemblies, require remote control, or need to

MPSA18

Abstract: 2N5088 CBVK741B019 F63TNR PN2222N MPSA18C MPSA18 Fairchild
Contextual Info: MPSA18 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted