2N4401 ITT Search Results

Contextual Info: Transistors UMT4401 / SST4401 / MMST4401 /2N4401 NPN Medium Power Transistor Switching I UMT4401 /SST4401 /MMST4401 /2N4401 •Features •E xternal dimensions (Units : mm) 1 ) BV ceo< 40V (lc = 1 m A ) 2 ) Complements the UMT4403/SST4403/MMST4403/PN4403

2N4401 surface mount

Abstract: 2N4401 transistor 2N4401 NPN Switching Transistor 2N4401 2N4403 2N4401 036
Contextual Info: 2N4401 VISHAY NPN SMALL SIGNAL TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary PNP Type Available

TRANSISTOR 2N 4401

Abstract: NEC 2N4400 2n4401
Contextual Info: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE 2N4400,2N4401 GENERAL PURPOSE SWITCHING AND AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION 2N4400, 2N4401 are NPN transistors, designed for general purpose switching and amplifier applications, feature injection-molded plastic package for high reliability.

2N4401

Contextual Info: TOSHIBA 2N4401 Transistor Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current " Iqev = ^ OOnA Max. , Ig[ry —-100nA (Max.) @ VCE = 35V, VBE = -0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

2N4401 surface mount

Abstract: 2N4401 NPN Switching Transistor 2N4401 transistor 2N4401 2N4403 NPN switching transistor 2N4403
Contextual Info: 2N4401 NPN SMALL SIGNAL TRANSISTOR Features • • • Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary PNP Type Available 2N4403 H-e-H h -M TO-92

Contextual Info: NEW PRO DUCT NEW PRO DUCT 2N4401 SMALL SIGNAL TRANSISTORS NPN FEATURES TO-92 0.181 (4.6) 0.142 (3.6) ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor 2N4403 is recommended.

transistor 2N4401

Abstract: 2N4401
Contextual Info: Transistors 2N4401 USHA INDIA LTD GENERAL PURPOSE TRANSISTOR • Colleetor-Emitter Voltage: Veto = 40V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit V cbo 60 40 6 600 V Collector-Base Voltage

2N4401 NATIONAL SEMICONDUCTOR

Abstract: 2N4401
Contextual Info: zn National Jut Semiconductor 2N4401 MMBT4401 T L /G /1 0 1 0 0 -1 NPN General Purpose Amplifier Electrical Characteristics T a = 25°C u n less o therw ise noted Parameter Sym bol Min Max Units OFF CH ARACTERISTICS V BR CEO Collector-Em itter B reakdow n V oltage, (Note 1)

T147

Abstract: 3307r schlumberger 2N4896 2N5220 2N4400 2N4401 2N4402 2N4403 FTS04400
Contextual Info: FAIRCHILD SEMICON DUC TO R fi4 DEj34t.Tt.74 0D27Sfll 1 3469674 FAIRCHILD SEMICONDUCTOR „ IDCHILD i, A Schlumberger Company • • • • • 84D 27581 D mmm 2N4400/FTS04400 ' ' - t r - i i 2N4401/FTS04401 Small Signal General Purpose Amplifiers & Switches

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

2N3904 pin diagram

Abstract: ic pin diagram diodes inc 2N5551 2N3906 pin diagram 2N5551 diodes inc BC547 ITTA05 to-92 type 2n5401 2n3904 2N3904
Contextual Info: Lead M ounted Transistors NPN Transistors/TO-92 VCEO Volts 25 25 30 40 40 40 60 80 160 300 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 M PS A05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 hpE @ VCE/IC V/mA 1/2 120-360 10/10 100-750 350-1400 5/1 100-300 10/150

2N4400

Abstract: 2n4401 motorola 2n4401
Contextual Info: 2N4400 2N4401* MAXIMUM RATINGS R atin g Sym bol V alu e U n it C o llector-E m itter Voltage VC E O 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc C ollector C urrent — C ontinuous 'C 600 m Adc Total Device D issipation a T ^ = 25; C

PM2907A

Abstract: PM2907 min60 ITTA05
Contextual Info: IM tkCr LEAD MOUNTED TRANSISTORS NPN TRANSISTORS / TO-92 Type Number ^060 OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +150°C hF E VcE' l 0 Volts V/m A max.V mA'mA PN2222A 40 100-300 10/150 1.0 500/50 10<’> 2N3904 40 100-300 1/10 0.3 50/5 50<2> 2N4401

IPS2222A

Abstract: IPS2907A IPS2907
Contextual Info: DIODES INC 32E D • 20407=13 00DG3bl 1 « D I I LEAD M OUNTED TRANSISTORS -r-z-7-.s NPN T R A N SIST O R S TO-92 PLASTIC C A S E 625 m W @ T l = 25°C 2mm FROM CASE VcEO Type Number Volts 2N3903 2N3904 2N4400 2N4401 IPS2221 IPS2221A IPS2222 IPS2222A 40

2n4401

Abstract: 2N4400 2N4401 2n4401 equivalent 2n4400 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G eneral Purpose Transistors 2N 4400 2N 4401* NPN Silicon ‘ M otorola Preferred D evice COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-E m itter Voltage Rating VCEO 40 Vdc C ollector-B ase Voltage

2n4401

Abstract: 2N4400 2N4401 2N4400 NV25
Contextual Info: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em ltter Voltage: V Ceo ” 40V • Collector Dissipation: Pe max *625mW ABSOLUTE MAXIMUM RATINGS nV»25*C) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

2N4401

Abstract: 2N4400 2N4401 transistor 2N4401 - TRANSISTOR
Contextual Info: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V * Collector Dissipation: P c max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Em itter Voltage

2n4401

Abstract: TRANSISTOR 2N 4401 "cb it" 4400 transistor transistor 4400
Contextual Info: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Veto=40V • Collector Dissipation: pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

TRANSISTOR 2N 4401

Abstract: 2n4401
Contextual Info: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: V c eo = 4 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

2n4125 equivalent

Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

TRANSISTOR 2N 4401

Contextual Info: 2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: VCEo=40V TO-92 • Collector D issipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Sym bol Rating Unit Collector-Base Voltage

2n3904 418

Abstract: 2N3905 Equivalent 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

ERF 2030

Abstract: HM 1211 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150

Contextual Info: M AXIMUM RATINGS Symbol Value C o lle ctor-E m itter Voltage Rating v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 6.0 Vdc 'c 600 m Adc Symbol Max Unit Pd 225 mW 1.8 m W:'JC Collector C urrent — C ontinuous Unit MMBT4401LT1*