2N4001 TRANSISTOR Search Results

JANTX2N5109

Abstract: JANTX2N3735 23219 2n2107 jantx2n3866
Contextual Info: Microsemi NPN Transistors Part Number 2N5109 JAN2N5109 JANTX2N5109 JANTXV2N5109 2N3866A JAN2N3866A JANTX2N3866A JANTXV2N3866A 2N2106 2N2107 2N2108 2N3498 2N3499 JAN2N3498 JAN2N3499 JANTX2N3498 JANTX2N3499 JANTXV2N3498 JANTXV2N3499 2N2726 2N2727 2N4000 2N4001

2N4001

Abstract: 2n4001 TRANSISTOR Transistor 2N4001
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4001 • Low Power • Hermetic TO-39 Metal package. • Ideally suited for Medium Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Transistor 2N4001

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4001 • Low Power • Hermetic TO-39 Metal package. • Ideally suited for Medium Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

2n2019

Abstract: 2n2018 2N545
Contextual Info: Ic = t .0 AMPS bvceo PACKAGE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019 2N2150 2N2151 2N2987 2N2988 2N2989 2N2990 2N3262 2N3739 2N4000 2N4001

2N4001 diode

Abstract: diode 2n4001 2n4001 diode 2N4000 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode
Contextual Info: TYPES 2N4000, 2N4001 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS o f TM • 15 W at 100°C Case Temperature £| • Max VcE iai of 0.3 V at 0.5 • Max ton of 300 nsat 0.5 A lc • Min f T of 40 MHz Alc g |

2N3419

Abstract: 2N3421 BFX34 BSV64 BUX34 BUY81 BUY82 BUY90 BUY91 BUY92
Contextual Info: NPN HIGH CURRENT SWITCHING TABLE 11- N P N SILICON PLANAR HIGH CURRENT SW ITCHING TRANSISTORS The transistors shown in this table are designed fo r high current, high dissipation sw itching applications in Industrial and M ilitary equipm ents. This table should be referred to in conjunction w ith the LF Power Transistor Section w hich contains full

2N1718

Abstract: 2N1720 2N3665 SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716
Contextual Info: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40

2N4001

Abstract: BUY80 2N3419 BUY82 BUY90 TRANSISTOR G13 2n4037 ferranti bfx34 bux34 BFX34 BSV64
Contextual Info: NPN HIGH CURRENT SWITCHING < TABLE 11- N P N SILICON PLANAR HIGH CURRENT SW ITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Section which contains full

2N4001

Abstract: Transistor 2N4001 2n4001 TRANSISTOR to-39 2n4037 BSV64 P9 Package BFX34 2N3420 2N4036
Contextual Info: PLANAR SWITCHING PLANAR SW ITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked with * which signifies PNP. Package JO-39 TO-39 TO-39 TO-39 TO-39 TO-39 V ceo 1A 2A 3A 5A 7.5A 10A 40 2N4037* !c Volts BSV60 2N3418 BUX34 2N3420 BUY80 BUY90*

BUY80

Abstract: 2N3418 2N3420 2N4036 2N4037 BFX34 BSV60 BSV64 BUX34 BUY90
Contextual Info: PLANAR SWITCHING P LA N A R SW ITCHING T R A N SISTO R S ELECTO R C H A R T Devices listed are N P N except where marked w ith * w hich signifies PN P. Package !c V ceo J O -3 9 TO-39 TO-39 TO-39 TO-39 TO-39 1A 2A 3A 5A 7.5A 10A V olts 40 B S V 60 2N4037*

2N4001

Abstract: 2N3418 2N3419 2N3420 2N3421 BFX34 BSV60 BSV64 BUX34 BUY80
Contextual Info: NPN SWITCHING T A B LE 6 - NPN SILICO N PLA N A R HIGH C U R R E N T SW ITC H IN G T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. The devices are listed in order of decreasing Collector Current, Breakdown Voltage, Power

2n1720

Abstract: 2N1716 N2989 2N1718 2N1252 2N3665 2N5682 MT-13 2N2993 2N4001
Contextual Info: high-rei power transistors 77 SILICON NPN TRANSISTORS 2 Amp BREAKDOWN VOLTAGE I TYPE NUMBER CASE SIZE 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 N2988 N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666

Contextual Info: 27E D IUCROSEMI CÔRP/POüJER • bllS^SQ G0GG5ai 1 ■ PTC T'33~0l W> a <u a Microsemi Company Transistor Experts Since 1974 Power Technology Com ponents, e o a E Power Transistors Now Available FromP.T.C. : U tè JO 'S c ■8 £u % Ck Device Type Polarity

2N3440 2N5416 REPLACEMENT

Abstract: 2N4001 diode Motorola -transistors 2N3440 MOTOROLA Motorola diodes 2N5415 REPLACEMENT 2N5416 MOTOROLA 2N5415
Contextual Info: Crystalonics: Transistors And Diodes Page 1 of 2 Small Signal Transistors JFETs <Pre Next> Surface Mount Transistors Dual and Quad Transistors PLANAR POWER TRANSISTORS 1 AMP NPN Dual Emitter Chopper 3N Transistors Power Transistors Obsolete "Motorola" Transistors

2N1052

Abstract: 2N1445
Contextual Info: One, TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SWITCHING TRANSISTORS ( Ic = 1.0 AMPS D EVICt MCIO VOLTS BVCH VOLTS BVCK> VOLTS PD@1WC WATTS N Fi @ lc Mln. Mn. AMPS TYPE PACKAGE 2N545

Contextual Info: Small Signal Transistors V (V) (V) (M ) h :E (V) ic (m A) (V) VCE(SA (V) (m A) O VCBO v CEO v EBO ICBO ® v CBO P DESCRIPTION TYPE NO. < o m TO-39 Case (Continued) ‘ 'CEO *VCER *r (MHz) C0 b *on ‘ o ff NF (PF) (ns) (ns) (dB) •TYP *TYP TYP TYP

2N4036

Abstract: TRANSISTOR BC140 transistor 2N2219 BUY90 ZT Ferranti 2N2102 2N2405 2N2708 2N3866 2N4427
Contextual Info: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details

Contextual Info: PLESSEY SEMICOND/DISCRETE i 7220533 PLESSEY DE | 7 2 2 0 S 3 3 □004^54 0 95D 04954 SEMICOND/DISCRETE -r-sr-/7 SWITCHING TABLE 6 - N P N SILICO N PLANAR HIGH CURRENT SW ITCHING T R A N SIST O R S The transistors shown in this table are designed for high current, high dissipation switching applications

n4300

Abstract: 2n1718 XB401 2N1720 XB412 T0117 transistor t05 XB411 2N3375 2N4128
Contextual Info: Silicon Power Transistors Type Case No. C o 11 Toase = 25°C V CBO V O o > > "tn o o w u w Typical Performance Maximum Ratings at V EBO ^C DC V A f Ptot W MHz V CC V P IN W pOUT W nC % *T MHz c OB pF sc/oc3 VH F NPN 2N3866 T039 EP 55 30 4 400 28 0-1 1*2 45

2N3055

Abstract: 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
Contextual Info: Illl iF ti mi Semelab Mil / Aerospace Division NATO LISTED TRANSISTO R PRO D UCT Semelab is listed and supplies transistors for use in NATO military systems. Semelab’s CAGE number is U3158. Below is a SELECTION from the 740 device types listed. NATO NUMBER

Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO v CEO v EBO *CBO v CBO <V) <V) (V) M (HA) MIN *CEO "»CES *">CEV *“ *CER *VCER MIN NUN O le O V cg VCE(SAT) ® *C h •E (mA) MIN (V) MAX (V) (mA) MAX Cob *T (MHz) (PF) *on <ns)

2N3444

Abstract: 2N3866 equivalent 2N3467 2N3468 2N3494 2N3495 2N3498 2N3499 2N3500 2N3501
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER Cob (pF) *TYP ton (ns) toff (ns) (dB) NF *TYP *TYP *TYP

2N3444

Abstract: 2N3495 2N3665 n3742
Contextual Info: Small Signal Transistors TO-39 Case Continued T Y P E NO. D ESC R IPTIO N V C BO v CEO (V) (V) (V) (HA) @ lC h | =E v EBO IC B O v C B O <mA) (V ) ® v C E V C E (S A T ) @ ' C (m A ) (V ) (V) *'C E O *V C ER *T (M H z) C0 b *on ‘ o ff NF (PF) (n s )