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    2N3866 LINEAR TECH Search Results

    2N3866 LINEAR TECH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    2N3866 LINEAR TECH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3866 application note

    Abstract: pulse amplifier measurement 7A29 2N3866 RF output Design noise diode generator 2N3375 P-6056 Linear Technology Magazine AN122 2N3866
    Text: L DESIGN IDEAS Diode Turn-On Time Induced Failures in Switching Regulators Never Has So Much Trouble Been Had by So Many with So Few Terminals by Jim Williams and David Beebe +V This article is excerpted from the Linear Technology Application Note AN122


    Original     		PDF AN122 LTM8032 36VIN 2N3866 application note pulse amplifier measurement 7A29 2N3866 RF output Design noise diode generator 2N3375 P-6056 Linear Technology Magazine AN122 2N3866

    2n3866

    Abstract: 2N3866 application note Ferronics 21-110J 2n3906 npn LT1010 LT318A lt1028 2N5638 AN21 LT1012
    Text: Application Note 21 July 1986 Composite Amplifiers Jim Williams Amplifier design, regardless of the technology utilized, is a study in compromise. Device limitations make it difficult for a particular amplifier to achieve optimal speed, drift, bias current, noise and power output specifications. As


    Original     		PDF LT1022 LT1010 an21f AN21-12 2n3866 2N3866 application note Ferronics 21-110J 2n3906 npn LT1010 LT318A lt1028 2N5638 AN21 LT1012

    Untitled

    Abstract: No abstract text available
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671fs,

    2N3866 application note

    Abstract: 2N5160 2N2369 transistor pulse generator LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671f 2N3866 application note 2N5160 2N2369 transistor pulse generator LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8

    2N3866 application note

    Abstract: transistor 2n2369 LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671fs, 2N3866 application note transistor 2n2369 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866

    pe-6197

    Abstract: 74C04 op amp transistor current booster circuit MJE305 linear an18 12BH7A 1000v to 2000v vac inverter circuit 2n5160 SCR c106 PIN CONFIGURATION 2N3866
    Text: Application Note 18 March 1986 Power Gain Stages for Monolithic Amplifiers Jim Williams Most monolithic amplifiers cannot supply more than a few hundred milliwatts of output power. Standard IC processing techniques set device supply levels at 36V, limiting available output swing. Additionally, supplying currents beyond


    Original     		PDF an18f AN18-16 pe-6197 74C04 op amp transistor current booster circuit MJE305 linear an18 12BH7A 1000v to 2000v vac inverter circuit 2n5160 SCR c106 PIN CONFIGURATION 2N3866

    LT1220

    Abstract: No abstract text available
    Text: LT1016 UltraFast Precision 10ns Comparator Features n n n n n n n Description UltraFast 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 LT1016, LT1016 100MHz LT1715 150MHz LT1719/LT1720/LT1721 LT1220

    sn1016

    Abstract: ATIC-17 2N2369 transistor pulse generator LT1016CN8 RCA 2N3866 dual fet q51 74121 application as pulse generator 2N3866 APPLICATION sn7402 equivalent LT1016
    Text: LT1016 UltraFast Precision 10ns Comparator U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 LT1016 LT1711/LT1712 LT1713/LT1714 LT1715 150MHz LT1719/LT1720/LT1721 sn1016 1016fcs ATIC-17 2N2369 transistor pulse generator LT1016CN8 RCA 2N3866 dual fet q51 74121 application as pulse generator 2N3866 APPLICATION sn7402 equivalent

    Lt1016

    Abstract: sn1016 lt1016 equivalent LT1220
    Text: LT1016 UltraFast Precision 10ns Comparator FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 T1016 LT1711/LT1712 LT1713/LT1714 LT1715 150MHz LT1719/LT1720/LT1721 sn1016 1016fcs Lt1016 lt1016 equivalent LT1220

    ATIC-17

    Abstract: 74121 application as pulse generator 2N2369 transistor pulse generator RCA 2N3866 2n5160 ATIC17 ATIC-17 c1 Transistor 2N3866 SN7402 datasheet sn7402 equivalent
    Text: LT1016 UltraFast Precision 10ns Comparator U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 LT1016 LT1711/LT1712 LT1713/LT1714 LT1715 150MHz LT1719/LT1720/LT1721 1016fc ATIC-17 74121 application as pulse generator 2N2369 transistor pulse generator RCA 2N3866 2n5160 ATIC17 ATIC-17 c1 Transistor 2N3866 SN7402 datasheet sn7402 equivalent

    Instruments

    Abstract: AN13F IC 7404 GP ttl ceramic oscillator using 7404 HP-HEMT-6000 precision Sine 1Mhz Wave Generator sinewave-generator of ic 7475 used in fastest finger first ttl 7474 sine wave 7404 ttl inverter photos
    Text: Application Note 13 April 1985 High Speed Comparator Techniques Jim Williams INTRODUCTION Comparators may be the most underrated and underutilized monolithic linear component. This is unfortunate because comparators are one of the most flexible and universally applicable components available. In large


    Original     		PDF 2N2369 HP5082-2810 2N3866 2N5160 LT1016 2N2369 an13f AN13-32 Instruments AN13F IC 7404 GP ttl ceramic oscillator using 7404 HP-HEMT-6000 precision Sine 1Mhz Wave Generator sinewave-generator of ic 7475 used in fastest finger first ttl 7474 sine wave 7404 ttl inverter photos

    ultronix 105A

    Abstract: LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent
    Text: LT1001 Precision Operational Amplifier DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) ultronix 105A LT1001 118MF LM129 LT1001AM LT1001C LT1002 74C9 Transistor 2N3866 2N3866 equivalent

    LT1001

    Abstract: OFM-1A OPTO MOS SWITCH OFM 2N5160 118MF ROSEMOUNT LT301A LM329 2N5160 equivalent 74c906 2N4393
    Text: LT1001 Precision Operational Amplifier DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		PDF LT1001 LT1001C, LT1001AM LT1001C 152mm) 254mm) 1001fb LT1001 OFM-1A OPTO MOS SWITCH OFM 2N5160 118MF ROSEMOUNT LT301A LM329 2N5160 equivalent 74c906 2N4393

    LT1001

    Abstract: No abstract text available
    Text: LT1001 Precision Operational Amplifier DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ U ■ The LT 1001 significantly advances the state-of-theart of precision operational amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire


    Original     		PDF LT1001 LT1001C, LT1001AM LT1001C LT10098 152mm) 254mm) 1001fb LT1001

    1N148 diode

    Abstract: 1N148 2N160 LF155A exponential Voltage-to-Frequency Converter ic lf351 as operational amplifier ic u440 ad611 Power AMPLIFIER 6012 "High Speed Amplifiers"
    Text: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTION FEATURES • ■ ■ ■ Guaranteed Offset Voltage –55°C to 125°C Guaranteed Drift Guaranteed Bias Current 70°C 125°C Guaranteed Slew Rate 150µV Max 500µV Max 4µV/°C Max


    Original     		PDF LT1055/LT1056 LT1055/LT1056 150pA 500pA amplifi81) 254mm) 1N148 diode 1N148 2N160 LF155A exponential Voltage-to-Frequency Converter ic lf351 as operational amplifier ic u440 ad611 Power AMPLIFIER 6012 "High Speed Amplifiers"

    1N148 diode

    Abstract: exponential Voltage-to-Frequency Converter 1n148 LT1056 lt1056 datasheet 2N3866 SCHEMATIC ic u440 CA3096 "Voltage-to-Frequency Converter" 2N2907 application notes
    Text: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTION FEATURES • ■ ■ ■ Guaranteed Offset Voltage –55°C to 125°C Guaranteed Drift Guaranteed Bias Current 70°C 125°C Guaranteed Slew Rate 150µV Max 500µV Max 4µV/°C Max


    Original     		PDF LT1055/LT1056 LT1055/LT1056 150pA 500pA amplifier81) 254mm) 1N148 diode exponential Voltage-to-Frequency Converter 1n148 LT1056 lt1056 datasheet 2N3866 SCHEMATIC ic u440 CA3096 "Voltage-to-Frequency Converter" 2N2907 application notes

    ta66

    Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original     		PDF LTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta66 uA733 Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592

    1N148 diode

    Abstract: 1n148 LT1056CS8 LF351 Op Amp IC LT1056 AD547 LM329 1N4148 2N3906 LT1022
    Text: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTIO FEATURES • ■ ■ ■ The LT 1055/LT1056 JFET input operational amplifiers combine precision specifications with high speed performance. Guaranteed Offset Voltage: 150µV Max


    Original     		PDF LT1055/LT1056 1055/LT1056 150pA 500pA 254mm) LT1122 340ns 14MHz, LT1792 10556fb 1N148 diode 1n148 LT1056CS8 LF351 Op Amp IC LT1056 AD547 LM329 1N4148 2N3906 LT1022

    ta143

    Abstract: Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 an47fa AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic
    Text: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.


    Original     		PDF gLTAN47 AN47-129 AN47-130 AN47-131 AN47-132 an47fa ta143 Ferronics 21-110J AN47-127 AN47 AN-4745 AN47-48 AN47-93 Tektronix P6056 TELEDYNE PHILBRICK logarithmic

    1N148 diode

    Abstract: LF351 op-amp D/A 2N160 Power AMPLIFIER 6012 LT1056CS8 2N5160 equivalent 747 op amp datasheet lt 864 LM329 LF351 op-amp application
    Text: LT1055/LT1056 Precision, High Speed, JFET Input Operational Amplifiers U DESCRIPTIO FEATURES • ■ ■ ■ ■ The LT 1055/LT1056 JFET input operational amplifiers combine precision specifications with high speed performance. Guaranteed Offset Voltage: 150µV Max


    Original     		PDF LT1055/LT1056 1055/LT1056 150pA 500pA LT1122 340ns 14MHz, LT1792 10556fc 1N148 diode LF351 op-amp D/A 2N160 Power AMPLIFIER 6012 LT1056CS8 2N5160 equivalent 747 op amp datasheet lt 864 LM329 LF351 op-amp application

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


    OCR Scan     		PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor

    900 mhz oscillator using bfr91 transistor

    Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 mrf559 mrf581 mrf837 mrf8372 mrf838/a 305a-01 mrf557 317d-01 900 mhz oscillator using bfr91 transistor Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239