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    2N3819 TI Search Results

    2N3819 TI Result Highlights (5)

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    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
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    2N3819 TI Price and Stock

    Central Semiconductor Corp 2N3819 TIN/LEAD

    Transistor RF JFET N-CH 25V 20mA 3-Pin TO-92 Box - Boxed Product (Development Kits) (Alt: 2N3819 TIN/LEAD)
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    Avnet Americas 2N3819 TIN/LEAD Box 2,500
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    Mouser Electronics 2N3819 TIN/LEAD 745
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    Central Semiconductor Corp 2N3819 APM TIN/LEAD

    JFETs 8V,10mA,360mW Through-Hole JFET N Channel
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    Mouser Electronics 2N3819 APM TIN/LEAD
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    Central Semiconductor Corp 2N3819 TRE TIN/LEAD

    JFETs 8V,10mA,360mW Through-Hole JFET N Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N3819 TRE TIN/LEAD
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    2N3819 TI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 2N3819

    Abstract: 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor


    Original     		2N3819 450MHz, transistor 2N3819 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor


    Original     		2N3819 450MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source NPN Epitaxial Silicon Transistor


    Original     		2N3819 450MHz, PDF

    2n3819

    Abstract: 2N3819 Application Note 2N3819 equivalent 2N3819 application 2n3819 datasheet 2N3819 data transistor 2N3819 N CHANNEL JFET 2N3819 J-FET 2N3819 2N 3819
    Text: 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc ID 100 mAdc Forward Gate Current IG f 10


    Original     		2N3819 r14525 2N3819/D 2n3819 2N3819 Application Note 2N3819 equivalent 2N3819 application 2n3819 datasheet 2N3819 data transistor 2N3819 N CHANNEL JFET 2N3819 J-FET 2N3819 2N 3819 PDF

    2N3819

    Abstract: 2N3819 Application Note N CHANNEL JFET 2N3819
    Text: 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS http://onsemi.com Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc ID 100 mAdc Forward Gate Current IG f 10 mAdc Total Device Dissipation


    Original     		2N3819 r14525 2N3819/D 2N3819 2N3819 Application Note N CHANNEL JFET 2N3819 PDF

    Untitled

    Abstract: No abstract text available
    Text: One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3819 N-Channel RF Amplifier w • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low


    Original     		2N3819 450MHz, 86MAX PDF

    transistor 2N3819

    Abstract: 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet
    Text: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N3819 N-channel J-FET PINNING - TO-92 FEA T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1 2 3 DESCRIPTION drain gate source DESCRIPTIO N


    OCR Scan     		2N3819 UBB081 D035fl44 J-FET-2N3819 transistor 2N3819 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet PDF

    2N3819 equivalent

    Abstract: 2N4223-24 2N5045 2N5045-7 dual jfet vhf 2N3819 2N3819 data 2N3821-4 2N3921-2 2N4084-5
    Text: designed fo r . B Siliconix . Perform ance Curves M IL See Section 5 • General Purpose Amplifiers ■ Analog Switching 2N3819 n-channel JFET BEN EFITS • Low Cost • Specified at 100 M Hz • Automatic Insertion Package •A B S O L U T E M A X IM U M R A TIN G S 25°C


    OCR Scan     		PDF

    transistor 2N3819

    Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION


    OCR Scan     		2N3819 J-FET-2N3819 transistor 2N3819 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819 PDF

    J2N5457

    Abstract: MPF105 MPF103 MPF106 U1897E 2N4303 J2N5458 MPF104 2N4302 mpf102
    Text: National Semiconductors F.E.T.'s-N-Channel Semiconductor General Purpose Amplifiers Epoxy Package REFERENCE TA B LE BVg ss ’BVd g o V (M in) Code E101 M P F1 03 M P F1 04 M P F1 05 M P F1 09 M P F1 10 MPF111 2N3819 2N4302 2N4303 2N 5457 2N5458 2N5459 30


    OCR Scan     		30779x MPF103 30882x MPF104 30783h MPF105 31330f MPF109 31334r MPF110 J2N5457 MPF106 U1897E 2N4303 J2N5458 2N4302 mpf102 PDF

    TIS58

    Abstract: TIS58 fet TIS88A TIS88 TIS59 BF245 BF256LC A5T4261 BF246 BF256LA
    Text: S FET's Silect For General Purpose Amplifiers Type No. Case TIS58 TIS59 T092 TQ92 O 5 Pol Û . IGSS CD I max. nA V n c 'it i A N N 25 2b O ft 4 4 F, 5 5 5 BF244A* BF244B* BF244C* T092 T092 T092 N N N N 2N3819 T092 N 25 2 2N3820 T092 P 20 20 2 N5460 T092 P


    OCR Scan     		TIS58 TIS59 BF245 BF244A* BF245A BF244B* BF245B BF244C* BF245C 2N3819 TIS58 fet TIS88A TIS88 BF256LC A5T4261 BF246 BF256LA PDF

    5T3824

    Abstract: ME1600 5T3821 2N3819 Texas Instruments
    Text: TYPE 2N3819 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 8 0 4 7 , A U G U S T 1 9 6 5 - R E V IS E D M A Y 1968 S IL E C T t F IE L D -E F F E C T T R A N S IS T O R * • For Industrial and Consumer Small-Signal Applications


    OCR Scan     		2N3819 5T3821 5T3824 ME1600 2N3819 Texas Instruments PDF

    2N3819 equivalent

    Abstract: 2N5045 2N3819 2N3821-4 2N3921-2 2N4084-5 2N4220-2 2N4223-24 2N5457-9 2N5556-58
    Text: MPFl 11 n-channel JFET designed fo r B . Siliconix Perform ance Curves NRL See Section 5 • General Purpose Amplifiers ■ Analog Switches B EN EFITS • Low Cost • Automatic Insertion Package TO -92 See Section 7 ABSOLUTE M A X IM U M RA TIN G S 25°C


    OCR Scan     		PDF

    2N3819 equivalent

    Abstract: MPF111 2N3821-4 2N5457-9 MPF109 2N5556-58 2N4220-2 2N4223-24 2N3819 U401-6
    Text: Siliconix . Perform ance Curves NRL See Section 5 2N5458 designed fo r • General Purpose Amplifiers ■ Switches • 2N5457 2N 5459 s n-channel JFETs •A B S O L U TE M A X IM U M R A TIN G S 25°C TO -92 See Section 7 BEN EFITS Low Cost • Automated Insertion Package


    OCR Scan     		PDF

    306-803

    Abstract: 2N3819 application 741 opamp 2N3819 Application Note 2N3819 transistor 2N3819 opamp 741 RS 305-636
    Text: Issued November 1983 J2983 Electronic attenuator Stocknumber 306-803 A silicon monolithic gain controlled A.C. amplifier programmed by an external D.C voltage or resistor. Applications include remote volume controls, speech compressors and expandor circuits. The device is


    Original     		J2983 100mV 2N3819 306-803 2N3819 application 741 opamp 2N3819 Application Note transistor 2N3819 opamp 741 RS 305-636 PDF

    306-803

    Abstract: 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor
    Text: Issued November 1983 002-983 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is


    Original     		20Vdc 100mV 306-803 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note 400V to 6V DC Regulator transistor 2N3819 opamp 741 audio compressor PDF

    306-803

    Abstract: 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741
    Text: Issued March 1997 232-2245 Data Pack J Electronic attenuator Data Sheet RS stock number 306-803 A silicon monolithic gain controlled ac amplifier programmed by an external dc voltage or resistor. Applications include remote volume controls, speech compressors and expander circuits. The device is


    Original     		20Vdc 100mV 306-803 4.7k Preset 741 opamp 2N3819 Application Note 1M preset 741 op-amp 2N3819 application audio compressor transistor 2N3819 rs amplifier 741 PDF

    2n3819 equivalent ic

    Abstract: 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent U401-6 2n4220 2N3821-4 2N3921-2 2N4084-5
    Text: monolithic dual n-channel JFET S NNR BACKS'0€ JUNCTION ISOLATED Siliconix designed f o r . . . • FE T Input Amplifiers B E N E FIT S : ■ Low and Medium Frequency Amplifiers • ■ Impedance Converters ■ Precision instrumentation Amplifiers M inim um System Error and Calibra­


    OCR Scan     		10mV/Â 2N3921-2, 2N4084-5, 2N5045-7, U401-6 2N4085CHP, 2N5046CHP-47CHP, U403CHP-06CHP 2n3819 equivalent ic 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent 2n4220 2N3821-4 2N3921-2 2N4084-5 PDF

    2N3819 equivalent

    Abstract: 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent
    Text: P-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON)(mA) J174 30.00 1.00 85 J175 30.00 .50 125 Operating Temperature: -55 o C to 150oC Part No. RDS(ON)(Ω) Drain-Source Min. On-State


    Original     		150oC 2N4858 2N4858A 2N4393 2N4859 2N4860 2N4860A 2N4861 2N3819 equivalent 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent PDF

    T018

    Abstract: t018 transistor 2N4303 2n4304 BF161 UHF UHF Transistors transistor t052 2N4221 transistor 2N4095 uhf transistor amplifier
    Text: diode TR ANS ISTOR CO INC A4 DE I 5 5 4 5 3 5 5 0000144 T \ ^ D1QDE TRdf\l515TQR CQ.,lf\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5863 _ SILICON FIELD EFFECT TRANSISTORS- •N— CHANNEL DEVICES


    OCR Scan     		2N3069 2N4038 2N4339 2N3436 2N4039 2N4391 2N3437 2N4091 2N4392 2N3686 T018 t018 transistor 2N4303 2n4304 BF161 UHF UHF Transistors transistor t052 2N4221 transistor 2N4095 uhf transistor amplifier PDF

    TP4119

    Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
    Text: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*


    OCR Scan     		0D03bQ0 TP3369 TP3370 TP3458 91-ao O-226AA/STYLES TP4119 2n3819 field-effect transistors nj132 TP3823 TP4392 2N3819 NJ16 NJ32 PDF

    BC237

    Abstract: TRANSISTOR bc177b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel


    Original     		BAW156LT1 BAW156LT3 inch/10 BAW156LT1 236AB) Junc218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 TRANSISTOR bc177b PDF

    BC237

    Abstract: diode H5
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMSD914T1 The switching diode has the following features: Motorola Preferred Device • SOD–123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time 1 Cathode 2 2 Anode 1 CASE 425–04, STYLE 1


    Original     		MMSD914T1 Ambient218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 diode H5 PDF

    BC237

    Abstract: BC547
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS116LT1 Switching Diode This switching diode has the following features: Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel


    Original     		BAS116LT1 BAS116LT3 inch/10 BAS116LT1 236AB) Total218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 BC547 PDF