2N3819 FIELD-EFFECT TRANSISTORS Search Results

2n3819 field-effect transistors

Abstract: MPF102 MMBF-5457 bf245b
Contextual Info: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457

TIS34

Abstract: tis58 TIS25 TIS59 2n2386 2N3328 TIS42 2N2499 2N3820 silec
Contextual Info: Field Effect Transistors No. £^ o 1 ! C S o w U “ S ilic o n P -C h a n n e l F ie ld Effect S ilic o n N -C h a n n el F ield Effect S ilic o n N -C h a n n el D ual M atched Field Effect Germ anium P Channel Field Effect V DG V !e mA p p p p p p 20 20

2n5248

Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE

2n3819

Abstract: bf245b
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. CASE MAXIMUM RATINGS BV css P4 mW (V) loss (mA) min max Y* (nimbos) min max Vcsf««) (V) min max Cte (pF) max (pF) max Cr„ NF (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11+ 1.2+ 1.2+ 1.2+ 1.2+

2N4303

Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
Contextual Info: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES

T018

Abstract: t018 transistor 2N4303 2n4304 BF161 UHF UHF Transistors transistor t052 2N4221 transistor 2N4095 uhf transistor amplifier
Contextual Info: diode TR ANS ISTOR CO INC A4 DE I 5 5 4 5 3 5 5 0000144 T \ ^ D1QDE TRdf\l515TQR CQ.,lf\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5863 _ SILICON FIELD EFFECT TRANSISTORS- •N— CHANNEL DEVICES

Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Pd mW BVGSS (V) min (mA) Yfs mai (mmhos) min m i VGS(oir) Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 min BC264A BC264B BC264C BC264D BF246A TO-92DE

TO-92DD

Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min

2N4039

Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
Contextual Info: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES

TIS69 equivalent

Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Contextual Info: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE

BC237

Abstract: marking CODE N3 SOT223 marking N3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE

BC237

Abstract: 2N7002LT1 Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Abstract: 31 MOSFET sot-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits.  These miniature surface mount MOSFETs utilize Motorola’s

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBF2202PT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s

transistor part number 2N2222A 338

Abstract: BC237 MARKING CODE diode sod123 W1 2N2222A 338 plastic package
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Abstract: BC394 motorola 2N956 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3454VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 50 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–

BC108 plastic

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 78 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–

BF256

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS84LT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the Greenline Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High