2N3811J) Search Results
2N3811J) Price and Stock
Motorola Semiconductor Products 2N3811JANTXV |
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Raytheon 2N3811JANTXV |
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2N3811J) Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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2N3811J | Semico | Package = TO-78, Level = Jans, Vceo (V) = 60, Vcbo (V) = 60, Vebo (V) = 5, Ic (A) = 0.05, (Power W) ta = 0.6, Rtja (C/W) =, Tstg/top (C) = -65 to +200, Hfe = 900, VCE(sat) (V) = 0.20 | Original | |||
2N3811JAN | New England Semiconductor | PNP SILICON DUAL TRANSISTOR | Original | |||
2N3811JANTX | New England Semiconductor | PNP SILICON DUAL TRANSISTOR | Original | |||
2N3811JANTXV | New England Semiconductor | PNP SILICON DUAL TRANSISTOR | Original | |||
2N3811JS | Semico | Package = TO-78, Level = Jans, Vceo (V) = 60, Vcbo (V) = 60, Vebo (V) = 5, Ic (A) = 0.05, (Power W) ta = 0.6, Rtja (C/W) =, Tstg/top (C) = -65 to +200, Hfe = 900, VCE(sat) (V) = 0.20 | Original | |||
2N3811JV | Semico | Package = TO-78, Level = Jans, Vceo (V) = 60, Vcbo (V) = 60, Vebo (V) = 5, Ic (A) = 0.05, (Power W) ta = 0.6, Rtja (C/W) =, Tstg/top (C) = -65 to +200, Hfe = 900, VCE(sat) (V) = 0.20 | Original | |||
2N3811JX | Semico | Package = TO-78, Level = Jans, Vceo (V) = 60, Vcbo (V) = 60, Vebo (V) = 5, Ic (A) = 0.05, (Power W) ta = 0.6, Rtja (C/W) =, Tstg/top (C) = -65 to +200, Hfe = 900, VCE(sat) (V) = 0.20 | Original |