2N3806 TRANSISTOR Search Results

2N3807

Abstract: 2N3806 2N3808 2N3806A 2N3811 JANTX K/2N3806
Contextual Info: 2N3806,A thru 2N3809,A 2N3810*,A 2N3811*,A *also available as JAN, JANTX, JANTXV PNP SILICON DUAL AMPLIFIER TRANSISTOR RATINGS Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C u rren t - Continuous SYMBOL ^CEO ^CBO ^EBO Ic

Q2T2905

Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
Contextual Info: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*

2N3810

Abstract: 2N3806 2n3808 LTADC 2N3811A 2N3807 2n3811 2N3810A 2n3806 transistor
Contextual Info: 2N3806 thru 2N3810,A 2N3811,A SOLID STATE INC 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com MAXIMUM RATINGS Rating Sym bol Value U n it Collector-Em itter Voltage v CE0 60 Vdc Collector-Base Voltage VcBO 60 Vdc Emitter-Base Voltage vebo

2N3726

Abstract: 2N3806 2n3808 2N4854A "Dual PNP Transistor" Dual PNP Transistor 2N4939 SIS 900 2N3727 2N3809
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 PACKAGE TO-78 VcEO sus VOLTS Ic (max) AMPS 2N3726 45 0.1 2N3727 45 2N3806 DEVICE TYPE @ IC/ V c E min/max @ m A/V ^FE ^ C E (sa t) @ IC/IB V @ mA/mA C<f P fi (MHz) 115@50/5 0.25@50/2.5 8 200

transistor 2N4015

Abstract: 2N3806
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 VcEO sus VOLTS Ic (max) AMPS 2N3726 45 0.1 2N3727 45 2N3806 PACKAGE DEVICE TYPE Jb TO-78 @ I<yV cE min/max @ mA/V h fE ^CE(sat) @ Ic/I b V @ raA/mA C<F p (MHz) 115@50/5 0.25@50/2.5 8 200 0.1

Contextual Info: 2N3806 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175þ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2n3810

Abstract: 2n3811 2n3808
Contextual Info: MOTOROLA SC 1EE D I b3b?2S4 000ti37fc> I | XSTRS/R F 2N3806, A - a 4? - * ? thru 2N3811, A CASE 654-07, STYLE 1 Collector 1 7 Collector M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage

2N3806

Abstract: 2N3807 NS2N 2N3808 2n 3808 2N3809 2n3811
Contextual Info: TYPES 2N3806 THRU 2N3811 DUAL P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 72 11686. M A R C H 1972 TW O T R A N S IS T O R S IN O N E P A C K A G E R E C O M M E N D E D FOR • Differential Amplifiers • High-Gain, Low-Noise Amplifiers • Low-Level Flip-Flops

FPQ2907

Abstract: FPQ3724 FPQ3725 FPQ2222 2N3806 2n3800 2N3805 FPQ3467 2N3804 2N3802
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL DUAL TRANSISTORS BY ASCENDING VcEO Item DEVIC“E NO. Poliirity NPN PNP 1 *2N2920 2 -2N2920A (Cont’d) hpE Matching VBE mV % @ ic v CEO V Min Min/Max 60 Package No. mA hFE 150/300 0.01 10 3.0 TO-78 10 60 150/300 0.01

DUAL TRANSISTORS IN TO77 PACKAGE

Abstract: 2N2222 Metal 2n2222 2n2484 complementary 2N4018 2N3800 2n2484
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUI V. PD (Total) hFE V CEO hFE @ SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484

2N3726

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL PNP TRANSISTOR TO-78 PACKAGE TO-78 Jf? DEVICE TYPE VcEO Ic sus (max) VOLTS AMPS IC/ V c E min/max @ mA/V 1*FE ^C E (jat) @ IC/IB V @ mA/mA C<p P fx (MHz) 2N3726 45 0.1 115@50/5 0.25@50/2.5 8 200 2N3727 45 0.1

2n2484 complementary

Abstract: Metal 2n2222 2N2484 2N2222 DUAL TRANSISTORS IN TO77 PACKAGE 2N2222/2N2222 2N2222/2n2484 complementary
Contextual Info: TRANSISTORS—MULTIPLE TRANSISTORS NPN UNMATCHED DUAL TRANSISTORS NUMERIC LISTING METAL CAN EQUIV. PD (Total) ^FE V CEO SINGLE VOLTS TYPE DEVICE MIN MD918 2N918 15 50 MD2218A 2N2218A 40 MD2219A 2N2219A 40 2N2641 2N2484 45 50 - 300 @ 2N2644 2N2484 45 2N2913

n3806

Abstract: 2n3811 motorola 2N3813 2N4942 2n3817 motorola 2N3816 2N3807 2N3808 2N3810 2N3810A
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) a v BE mV Max hFE2 Gp dB Min {on ns Max VC£ <C (sat) _ Volts I l B Max I to * w 71 Subscript ID Ref. Point TYPE NO. ° 2 § >f r? hFE1 0.5 0.5 0.5 0.5 0.5 A A A A A 60 60 60 60 60

2N3050

Abstract: 2N2804 2N2640
Contextual Info: "SEMICONDUCTOR TECHNOLOGY GSE D | fll3t.45fl □□□0230^4 | r ^ f - 27 ËHÏ' SILICO N DUAL DIFFERENTIAL AMPLIFIER TRANSISTORS STIType Polarity Pow er Dissipation Total @ 2 5 °C ( M in .) hF E lc MATCHING v CE0 (volts) (Min.) (Max.) mA hFE(%) MW v b e (m v )

2N3726

Abstract: 2N2453 2N3806 2N2919A 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % 2N2060 NPN AMPL/SWITCH 500

2n2453

Contextual Info: Dual Transistors TO-78 Case P q @ T/\=25°C=600m W Total Both Die Equal Power DESCRIPTION " TYPE NO. I v CBO VCEO (V) 00 h =E @ lc <mA) @ V cE (V) v c e (s ; I T ) (V) 'C (mA) h (MHz) I *TYP MIN MAT<; h in g h FE v Be MIN MIN MIN MAX NPN AMPL/SWITCH 500

N248

Abstract: 2N2453 2N3726 2N3806 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2639
Contextual Info: Dual Transistors TO-78 Case P q @ T/^=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) v CBO VCEO (V) (V) h =E @ lc @ Vce <mA) (V) VCE(S/kT) >C (V) (mA) *T (MHz) *TYP MIN MAT«IH IN G h FE VBE MAX MIN MAX 500 100 50 150 10 5.0 MAX

Contextual Info: Dual Transistors TO-78 Case P q @ TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) VCBO VCEO (V) (V) h @«C (mA) MAX MIN MIN MIN MAX 2N2060 NPN AMPL/SWITCH 500 100 60 50 150 2N2060A NPN AMPLVSWITCH 500 100 60 50 150 2N2223 NPN AMPL7SWITCH

2N3806

Abstract: 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

MD8003

Abstract: MD7005
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

2n3810 datasheet

Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

2N2453A

Contextual Info: Dual Transistors TO-78 Case PD TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c v CBO VCEO (n»A) (V) (V) h|=E @lc @ VCE (mA) (V) MATCHING VCE(SAT )® 'C (mA) M (MHz) h FE VBE % 10 <mV) 5.0 3.0 10 5.0 MAX 1.2 50 *TYP MIN 60 150 10 5.0

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH

transistor 2N3907

Abstract: t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N3790X 2N3791 2N3791 CECC 2N3791-SM 2N3792 2N3792 CECC 2N3792-SM 2N3792LP CECC 2N3799 2N3799X 2N3800 2N3800DCSM 2N3801 2N3801DCSM 2N3802 2N3802DCSM 2N3803 2N3803DCSM 2N3804 2N3804DCSM 2N3805 2N3805A