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    2N3716 Price and Stock

    MACOM JANTX2N3716

    TRANS NPN 80V 10A TO204AA
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    Microchip Technology Inc 2N3716

    NPN POWER SILICON TRANSISTORS
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    Microchip Technology Inc JAN2N3716

    TRANS NPN 80V 10A TO3
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    Microchip Technology Inc JANTX2N3716

    TRANS NPN 80V 10A TO204AA
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    Microchip Technology Inc JANTXV2N3716

    TRANS NPN 80V 10A TO3
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    2N3716 Datasheets (73)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3716 Comset Semiconductors Epitaxial-Base NPN - PNP - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N3716 Microsemi NPN High Power Silicon Transistor Original PDF
    2N3716 On Semiconductor General Purpose Bipolar Transistor, NPN, 80V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N3716 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N3716 Advanced Semiconductor Silicon Transistors Scan PDF
    2N3716 Boca Semiconductor SILICON NPN POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N3716 Central Semiconductor BJT, NPN, Power Transistor, IC 10A - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N3716 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N3716 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N3716 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
    2N3716 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N3716 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3716 General Diode Transistor Selection Guide Scan PDF
    2N3716 General Transistor Power Transistor Selection Guide Scan PDF
    2N3716 Mospec POWER TRANSISTORS(10A,150W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N3716 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3716 Motorola The European Selection Data Book 1976 Scan PDF
    2N3716 Motorola European Master Selection Guide 1986 Scan PDF
    2N3716 Motorola 10A Power Transistors Silicon NPN Scan PDF
    2N3716 Motorola Power Transistor Selection Guide Scan PDF

    2N3716 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3792

    Abstract: 2N3791 2N3715 2N3716
    Text: SavantIC Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications


    Original     		PDF 2N3791 2N3792 2N3715 2N3716 2N3791 -10BE 2N3792 2N3715 2N3716

    2N3716

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N3716 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline TO-3 and symbol


    Original     		PDF 2N3716 2N3716

    2N3792

    Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


    Original     		PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 PNP 2N3791 2N3713 2N3714 2N3789 2N3790

    2N3716

    Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


    Original     		PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 2N3714 2N3713 PNP 2N3791 2N3789 2N3790 NPN transistor 2n3713

    2n3716

    Abstract: No abstract text available
    Text: 2N3716 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N3716 O204AA) 18-Jun-02 2n3716

    2N3716 MOTOROLA

    Abstract: BU108 2SA1046 bd139 application note BUY69A BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 2N3716 Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • • • • • Total Switching Time at 3 A typically 1.15 µs Gain Ranges Specified at 1 A and 3 A


    Original     		PDF 2N3791 2N3715 2N3716 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N3716 MOTOROLA BU108 2SA1046 bd139 application note BUY69A BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: 2N3716 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3716 Freq30k time450nÃ

    Untitled

    Abstract: No abstract text available
    Text: 2N3716+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3716 Freq30k time450nÃ

    2N3716

    Abstract: No abstract text available
    Text: 2N3716 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N3716 O204AA) 31-Jul-02 2N3716

    2N3716X

    Abstract: No abstract text available
    Text: 2N3716X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N3716X O204AA) 31-Jul-02 2N3716X

    2N3792

    Abstract: 2N3791 2N3715 2N3716
    Text: Inchange Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications


    Original     		PDF 2N3791 2N3792 2N3715 2N3716 2N3791 2N3792 2N3715 2N3716

    2N3715

    Abstract: 2857 transistor 2N3716 1000C
    Text: TECHNICAL DATA MIL-PRF 2N3715 JAN, JTX, JTXV 2N3716 JAN, JTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/408 NPN SILICON HIGH POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		PDF 2N3715 2N3716 MIL-PRF-19500/408 1000C 2N3715 2N3716 O-204AA) 2857 transistor 1000C

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2N4122

    Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
    Text: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741


    OCR Scan     		PDF DDD44 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N4122 2N4121 2N4134 2n3771 2N4080 2N4135

    2N3715

    Abstract: 2N2716 2N3713 2N3714 2N3716 lc50a
    Text: Data Sheet 2N3713 2N3714 2N3715 2N3716 Central" Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors d e s c r ip t io n


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3714 2N3716 2N3713, 2N3714) 2N2716 lc50a

    2N3716

    Abstract: 2N3713 2N3714 2N3715 2N3789 2N3792
    Text: SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas Complementary PNP Types Available 2N3789 thru 2N3792


    OCR Scan     		PDF 2N3789 2N3792 2N3713 2N3716 2N3713 2N3715 2N3714 2N3716 2N3713, 2N3792

    2N3715

    Abstract: 2n3716 2N3792 2n 3950 2N3792, 3715 2n3791
    Text: r z T SGS-THOMSON Ä 7 # RülDeæi[Liera iDei 2N3715 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715AND2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec


    OCR Scan     		PDF 2N3715 2N3716 2N3791/2N3792 2N3715AND2N3792 2N3791 2N3792 2n 3950 2N3792, 3715

    Untitled

    Abstract: No abstract text available
    Text: m 2N3716 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3716 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 MAXIMUM RATINGS lc 10 A Ib 4.0 A < O m P diss MAX. BOTH e n d 80 V 150 W @ T C= 2 5 °C Tj -65 °C to +200 °C


    OCR Scan     		PDF 2N3716 2N3716

    2N39024

    Abstract: jantx 2n5302
    Text: BIPOLAR N P N P O W E R T R A N S IS T O R S PEAK PACKAGE TO-204 TO-3 VCI (sot) DEVICE bvceo •c hFE TYPE VOLTS AMPS 60 10.0 2N3716*' 80 10 2N39024* 325 2.5 30-90 2N5302’ * 60 30.0 15-60 2N5303* 80 20.0 15-60 10.0/4.0 1.5 10.0/2.0 2N5685* 60 50.0 15-60


    OCR Scan     		PDF 2N3715* 2N3716* 2N39024* 2N5302' 2N5303* 2N5685* 2N5686* 2N6249* 2N6250* 2N6251* 2N39024 jantx 2n5302

    2N4004

    Abstract: 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127
    Text: Case Outlines TO-61 2-67 max TO-63 TO-111 4 25 Metal Can Power \ High Reliability Professional Types continued Device Type 2N3789 2N3713 2N3715 2N3791 TIP5433 2N5940 2N3790 2N3792 2N5939 2N6127 2N6128 2N3714 2N3716 2N4301 TIP562 TIP563 TIP663 TIP664 TIP665


    OCR Scan     		PDF O-111 TC-26Â 2N3789 2N3713 2N371S 2N3791 TIP5433 2NS940 O-111 2N3790 2N4004 2N3551 2N1936 2N4005 2N326S tip665 TIP540 TIP664 2N6128 2N6127

    Untitled

    Abstract: No abstract text available
    Text: rz7 SCS-THOMSON ^7# 2N3715/2N3716 2N3791/2N3792 KflOœ iLiûra !DOS COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715 AND 2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec


    OCR Scan     		PDF 2N3715/2N3716 2N3791/2N3792 2N3715 2N3792 2N3715 2N3716 2N3791 2N3715/2N3716/2N3791 /2N3792

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR NPN MESA POWER TRANSISTORS TO-63 4 • h FE min/max < < o m ■c o PEAK VCE sat max VOLTS 'C @>B A A o T0-204 (TO-3) DEVICE TYPE O C /> ILI 1 o > m > PACKAGE AMPS 2N3715* 60 10.0 50-150 1.0/2.0 0.8 5.0/0.5 2N3716* 80 10.0 50-150 1.0/2.0 0.8 5.0/0.5


    OCR Scan     		PDF T0-204 2N3715* 2N3716* 2N3902* 2N5302* 2N5303* 2N5685* 2N5686* 2N6249* 2N6250*

    2N3902

    Abstract: T0204 2N5685
    Text: A POWERHOUSE BIPOLAR NPN M ESA POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 r« si VH| % TO-63 • DEVICE TYPE PEAK bvceo 'c VOLTS AMPS hFE min/max ■C@ VCE A V VCE s;M» max •c ü VOLTS A A 2N3715* 60 10.0 50-150 1.0/2.0 0.8 5 0 C.5 2N3716* 80 10.0


    OCR Scan     		PDF T0-204 2N3715* 2N3716* 2N3902* 2N5302* 2N5303* 2N5685* 2N5686* 2N6249* 2N6250* 2N3902 T0204 2N5685

    Untitled

    Abstract: No abstract text available
    Text: _ _ ADVANCED 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR SEMI CONDUCTOR - flâ D Ë loaSÔ B S 4 82D 0 0 0 4 4 0000044 D S IL IC O N _ _ _ _ « _ _T Ü A P J S iS T O fiS Pd @ Tc=25°C DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N3743