2N3703 TRANSISTOR Search Results

2N3703

Contextual Info: 2N3703 360mW silicon general purpose AF transistor 2.26 Transistors T. 1 of 1 Home Part Number: 2N3703 Online Store 2N3703 Diodes 3 6 0 m W s ilic o n general purpo s e AF t rans is t o r Transistors

Contextual Info: 2N3703 2N3703 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor

2N3703

Abstract: transistor 2N3703 2N3703 transistor
Contextual Info: 2N3703 2N3703 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor

2n3703

Contextual Info: Qzn&tij aSttnL-ConcLuitoi ZPtoeLata* TELEPHONE: 973 376-2882 203TERNAVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6008 USA FAX: (973) 3764880 2N3703 P-N-P SILICON TRANSISTOR *CASE OUTLINE ALl °'MENSI°NS ir> 1 *' —•- INCHES F -*- ~— 0-015 (NOTE A)

2n3702

Abstract: 2N3703 transistor 2N3703 data sheet 2N3702
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX 5,33 5,20

TO92 30v 800ma

Abstract: 180NS
Contextual Info: MOE T> " imiiirr i i V- n‘ T flS flW QQ032fil 3 BERHM ~~ ~F27-0 • P N P Transistors T O -92) General Purpose Small Signal Amplifiers Package BVceo (Fig. 1)' Min. TO-92 2N3702 (ECB) 40V MPS3702 (EBC) TO-92 2N3703 (ECB) 50V MPS3703 (EBC) TO-92 2N3058

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

2N3706

Abstract: 2N3702 2N3703 2N3704 3n3703 A6T3 km 3702 A8T3703
Contextual Info: 3 5 g -7 2 ./ I l Z S •“H '* * « . . * A . ' SEMELAB TYPES 2N3702, 2N3703 P-N -P SILICON TRANSISTORS For Complementary U m with 2N3704 thru 2N3706 M ECHANICAL DATA TD-92 D EVIC E 1 E m ttta r 2N 370Z. 2N 3703 LE AOS 2 C ollector 3 Bm ABSOLUTE M A X IM U M RATINGS

2N3702

Abstract: 2N3703
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX

2N3702

Abstract: 2N3703
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX

transistor c37

Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 TRANSISTOR a31 2N3904 A32 2N3904 b11
Contextual Info: BIPOLAR TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF S S T /S M T SOT-23 , UMT (SOT-323), MPT (SOT-89) AND TO-92 PACKAGED BIPOLAR TRANSISTORS PART NUMBER PART NUMBER DIE No. DIE No. PAGE PAGE PAGE PAGE 2 2N2925 28 C22 61 2N3703 31 A32 37 BCW65B BCW65C 22

2N3703

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN

transistor 2N3703

Abstract: 2N3703 CBVK741B019 F63TNR PN200 PN2222N
Contextual Info: 2N3703 E TO-92 CB PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

60V PNP TO-92

Abstract: 500ma 40v pnp
Contextual Info: Transistors • TO-92 Package/PNP Type For General Purpose Small Sig nal Am plifiers Part No. Package BVceo Min. 2N3703 TO-92 EC8 50V BVceo BV ebo Min. Min. 30V 5V '“ ° @VC0 . h? . @IC & VCE Min. Max. Max. 100nA 20V 30 150 50mA 5V VcE(sat) Max. VBE(sat)

2N4249

Abstract: 2N4288 2n4058 2N4289 2N4971 2N3702 2N3703 2N3905 2N3906 2N4059
Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. CBO CEO ^EBO Pd Min @Tc=25°c (V) (V) (V) Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (W) ICBO (A) ^CB ^ces ^ ce m @(v) (jA) Max Max h FE @ 6 (V) Min 'c * (mA)

2N4291

Abstract: 2N5447 MMBT3638 MMBT3638A MMBT4916 2N4290 pn917 2N5221 BCW29 BCW30
Contextual Info: NATL SEMICOND DISCRETE 52E D • bSQUBQ 27~ òI 003777k' □ ■ PNP General Purpose Transistors by Ascending Vceo Part Type Vcep(V) VcboOO Min Min . HfB Min Max (m A /V ) Ft (MHz) Min 50 50 30 50 200 200 600 120 500/1.0 350/1.0 50/10 10/1.0 60 60 100 850

Contextual Info: TO-92 Plastic Package Transistors PNP Maxim um Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd ^CBO ^CEO ^EBO (W) (A) (V) (V) (V) Min Min Min @Tc=25°c ^CES ^CE I'Ve @ (V) (PA) @ (V) Min Max Max Max IcBO m lc * (mA)

2N4288

Abstract: 2N4249 2N4059 2N4289 2N4291 2N4971 2N3702 2N3703 2N3905 2N3906
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. ^cao (V) Min ^CEO ^EBO (V) Min M Min 'c Pd (W) (A) Tc=25°c Max 'cBO m ^CB ®(V) 'c e s m Max ^CE »FE 9 « « Min 'c & (mA)

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

MMST8598

Abstract: "Die No." st5101
Contextual Info: DIE NO. PNP Small Signal TRANSISTOR Dili No. IMAXIMUM RATINGS T a= 25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage VcBO 50 V Emitter-Base Voltage V ebo 5 V Collector Current Continuous Ic Parameter A -3 2 •I DESCRIPTION

2n2712 data sheet

Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0

2N4058

Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff

n3904

Abstract: 2N3706 2N4289 "low noise" npn QDD2421 2n4287
Contextual Info: Small Signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VCBO v CEO v EBO •CBO ä V c B C nA (V) (V) (V) (V) '■c e s *VCES *'CEV MIN MIN MIN MAX vCE © l c v C E (S i L T ) 'C c ob h FE (V) (mA) (V) (mA) ‘hfe(1 kHZ) MIN MAX NF ‘off

Contextual Info: Small Signal Transistors TO-92 Case TO-92 TYPE MO. FAMILY UEAD CODE II•FE VC 8 0 v CEO VS0O *CBO * V (V) (V) W MM •V ce s MM MM *>CES *C6V MAX evcE M VCE(5A D *c c Ob <mA} 00 (mA) ’hfgftlcHZ) NM MAX ♦r NF *off m {MHz) (dB) *^rb MAX TYP MM MAX MAX