2N3637 SMD Search Results

2N3637 SMD Result Highlights (5)

Part	Manufacturer	Description
BLM15PX121BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 180ohm POWRTRN
BLM21HE802SN1L	Murata Manufacturing Co Ltd	FB SMD 0805inch 8000ohm NONAUTO
BLM15PX330BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 33ohm POWRTRN
BLM15PX600SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 60ohm POWRTRN

2N3637 SMD Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTOR BC337 SMD Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139 Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices	Original	MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139	PDF
MCA0616/1 Abstract: T-120-01B Skynet Electronic Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology	Original	MIL-PRF-19500 QR216, QR217 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 MCA0616/1 T-120-01B Skynet Electronic	PDF
2N3810 LCC Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die Text: Space Products Semelab products and processes for space applications SEMELAB \| experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5	Original	FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10	Original	MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237	PDF
BC237 Abstract: MPSA06 346 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste	Original	MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 K 2056 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r	Original	MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
2N16 Abstract: BC237 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72	PDF
2n2222 h 331 transistors Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1	PDF
2N643 Abstract: BC237 MARKING DP SOT-363 DO204AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA	PDF
BC237 Abstract: MMBD2005T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1	PDF
MPS5771 Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage	Original	MPS3640 226AA) U218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS5771 MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic	PDF
BC237 Abstract: TRANSISTOR bc177b Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel	Original	BAW156LT1 BAW156LT3 inch/10 BAW156LT1 236AB) Junc218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 TRANSISTOR bc177b	PDF

BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15	Original	MPSH17 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE	Original	MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237	PDF
MPS2369 equivalent Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement" Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage	Original	MPS2369 MPS2369A* 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS2369 equivalent BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"	PDF
motorola p1f Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for	Original	OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363	PDF
2N5640 equivalent Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C	Original	2N5640 226AA) Gate218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 2N5640 equivalent BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431	PDF
BC237 Abstract: marking CODE N3 SOT223 marking N3 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE	Original	MGSF1N03LT1 Sur218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 marking CODE N3 SOT223 marking N3	PDF
MV104 "direct replacement" Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.	Original	MV104) MV104 226AA) Curren218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV104 "direct replacement" 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION	PDF
2N3819 Abstract: BC237 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for	Original	OT-416/SC 7-inch/3000 2SC4617 SURFAC218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3819 BC237 BCY72	PDF
code marking 6z sot-23 Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel  1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous	Original	MMBF170LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 code marking 6z sot-23 BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72	PDF
2608 surface mount transistor Abstract: BC237 high hfe darlington transistor sc70 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPS6724 MPS6725 COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPS6724 MPS6725 Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage VCBO 50	Original	MPS6724 MPS6725 MPS6725 226AE) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2608 surface mount transistor BC237 high hfe darlington transistor sc70	PDF

2N3637 SMD Search Results

2N3637 SMD Result Highlights (5)

2N3637 SMD Datasheets Context Search

TRANSISTOR BC337 SMD

MCA0616/1

2N3810 LCC

BC237

BC237

BC237

BC237

2N16

2n2222 h 331 transistors

2N643

BC237

BC237

MPS5771

BC237

BC237

BC237

MPS2369 equivalent

motorola p1f

2N5640 equivalent

BC237

MV104 "direct replacement"

2N3819

code marking 6z sot-23

2608 surface mount transistor