2N3055 |
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Comset Semiconductors
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Epitaxial-Base NPN Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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Micro Commercial Components
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TRANS GP BJT NPN 60V 10A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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Microsemi
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NPN power silicon transistor. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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Motorola
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15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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On Semiconductor
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General Purpose Bipolar Transistor, NPN, 60V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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On Semiconductor
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Complementary Silicon Power Transistors - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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Semelab
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NPN power transistor, 100V, 15A - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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Semelab
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Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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STMicroelectronics
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COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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STMicroelectronics
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Complementary power transistors |
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2N3055 |
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STMicroelectronics
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Complementary power transistors |
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2N3055 |
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STMicroelectronics
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TRANS GP BJT NPN 60V 15A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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Transys Electronics
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SILICON PLANAR POWER TRANSISTORS |
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2N3055 |
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USHA
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High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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USHA
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NPN silicon power transistor. 15 Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 |
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2N3055 |
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Various Russian Datasheets
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Transistor |
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2N3055 |
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Advanced Semiconductor
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Silicon Transistor Selection Guide |
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Scan |
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2N3055 |
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API Electronics
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15 AMPS / 20 AMPS NPN Transistors |
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Scan |
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2N3055 |
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API Electronics
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Short form transistor data |
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Short Form |
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2N3055 |
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API Electronics
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Short form transistor data |
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Short Form |
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