2N2917 DUAL TRANSISTOR Search Results

Contextual Info: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

Transistor 78 L 05

Abstract: 2N2223A 2N2453 2N2453A 2N2639 2N2919 2N2642 2N2060 2N2223 2N2480A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 Jgr / DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

2N2913

Abstract: 2N2915
Contextual Info: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)

2N2915

Abstract: 2N2917 2N2913 2n2917 dual transistor
Contextual Info: 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200)

Q2T2905

Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
Contextual Info: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*

Contextual Info: <Se.mi-Cond\j.ctoi tPioducti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm (inches) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE / 0 . 7 1 (O.OJ8)

2n2917 dual transistor

Abstract: 2N2917
Contextual Info: Datasheet 2N2917 C o Gi vI tI PU f il li 1l T" W Semiconductor Cord . W l l l l W l l l i v V V w NPN SILICON DUAL TRANSISTOR l 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-78 CASE Manufacturers of World Class Discrete Semiconductors

2N2920

Abstract: 2n2917 2n2915 2N297 2N2919 2N2913 2n2914 2N2920 applications 2N2972 MOTOROLA 2n2920
Contextual Info: DUAL NPN SILICON @ e e e e e e ANNULAR*TRANSISTORS . . . especially designed for low-level, differential amplifier applications. @ low-noise e s High Breakdown Voltage BVCEO= 70 Vdc typical o Very High Beta Guaranteed ,.$:>. ,.,p~ .*. s Beta Match as tight as 0.9 to 1

Transistor 78 L 05

Abstract: 2N2919 130L 2N2903 2N2916
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 / 24 DEVICE TYPE ^CEO sus VOLTS Ic (max) AMPS hpE @ Ic/ ^CE min/max @ mA/V ^CE(sat) @ I q/I b V @ mA/mA /t (MHz) 2N2060 60 0.5 30/90@0.1/5 1.2@50/5 P 15 2N2223 60 0.5 25/150@0.1/5

2n2920

Abstract: 2n2915a 12S3C 2n2916 2N2919A 2N2979 2N2972 2N2913 alc100 2920A
Contextual Info: TYPES 2N2913 THRU 2N2920. 2N2915A. 2N2916A, 2N2919A, 2N2920A. DUAL N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 1 1 1 6 5 , M A R C H 1 9 6 9 A B R O A D F A M IL Y OF D U A L T R A N S IS T O R S R E C O M M E N D E D FO R • • • • Differential Amplifiers

2N3053 NPN transistor

Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N2893 2N2894 2N2894A 2N2894ACSM 2N2894AQF 2N2894CSM 2N2894DCSM 2N2895 2N2896 2N2904 2N2904A 2N2904AL 2N2904L 2N2905 2N2905A 2N2905AL 2N2905L 2N2906 2N2906 CECC 2N2906A 2N2906A CECC 2N2906ACSM

FMT1061

Abstract: MD918A se3002 fairchild to-106 FTR129A 2N3571 2N3572 2N5770 FMT1061A FMT2090
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont’d) Item PG [GM A] (O S C POW ER) dB @ f Min MHz D EV ICE NO. vCEO V Min *T MHz Min Cob [C ce] (C cb) pF Max (0.8) Pd ta NF dB Max @f MHz 25°C

2N3050

Abstract: 2N2804 2N2640
Contextual Info: "SEMICONDUCTOR TECHNOLOGY GSE D | fll3t.45fl □□□0230^4 | r ^ f - 27 ËHÏ' SILICO N DUAL DIFFERENTIAL AMPLIFIER TRANSISTORS STIType Polarity Pow er Dissipation Total @ 2 5 °C ( M in .) hF E lc MATCHING v CE0 (volts) (Min.) (Max.) mA hFE(%) MW v b e (m v )

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH

2n3810 datasheet

Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

2N3726

Abstract: 2N2453 2N3806 2N2919A 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % 2N2060 NPN AMPL/SWITCH 500

2n2453

Contextual Info: Dual Transistors TO-78 Case P q @ T/\=25°C=600m W Total Both Die Equal Power DESCRIPTION " TYPE NO. I v CBO VCEO (V) 00 h =E @ lc <mA) @ V cE (V) v c e (s ; I T ) (V) 'C (mA) h (MHz) I *TYP MIN MAT<; h in g h FE v Be MIN MIN MIN MAX NPN AMPL/SWITCH 500

N248

Abstract: 2N2453 2N3726 2N3806 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2639
Contextual Info: Dual Transistors TO-78 Case P q @ T/^=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) v CBO VCEO (V) (V) h =E @ lc @ Vce <mA) (V) VCE(S/kT) >C (V) (mA) *T (MHz) *TYP MIN MAT«IH IN G h FE VBE MAX MIN MAX 500 100 50 150 10 5.0 MAX

Contextual Info: Dual Transistors TO-78 Case P q @ TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) VCBO VCEO (V) (V) h @«C (mA) MAX MIN MIN MIN MAX 2N2060 NPN AMPL/SWITCH 500 100 60 50 150 2N2060A NPN AMPLVSWITCH 500 100 60 50 150 2N2223 NPN AMPL7SWITCH

MD8003

Abstract: MD7005
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

MD8003

Abstract: 2N2453 2N2916 2N3726 MD7003A MD6001 MD6001F MD6002 MD6002F MD6003
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) ID ? 2 2 Subscript Ref. Point hFE1 MD6001 MD6001F MD6002 MD6002F CG CG CG CG .575 0.35 .575 0.35 A A A A 30 30 30 30 MD6003 MD6003F MD6100 MD6100F MD7000 MD7001 CA CA CA CA NA PA .575 A

2N3806

Abstract: 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

2N2453A

Contextual Info: Dual Transistors TO-78 Case PD TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c v CBO VCEO (n»A) (V) (V) h|=E @lc @ VCE (mA) (V) MATCHING VCE(SAT )® 'C (mA) M (MHz) h FE VBE % 10 <mV) 5.0 3.0 10 5.0 MAX 1.2 50 *TYP MIN 60 150 10 5.0