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    2N2646 TRANSISTOR Search Results

    2N2646 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    2N2646 TRANSISTOR Price and Stock

    NTE Electronics Inc 2N2646

    Unijunction Transistor 3-Pin TO-18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N2646 1
    • 1 $7.4
    • 10 $6.73
    • 100 $5.14
    • 1000 $4.57
    • 10000 $4.5
    Buy Now

    2N2646 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n2646

    Abstract: 2N2646 to18
    Text: 2N2646 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2646 Availability Online Store


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    PDF 2N2646 2N2646 Specifications973) STV3208 2N2646 to18

    2n2646

    Abstract: 2n2647
    Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage


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    PDF 2N2646, 2N2647 MIL-PRF-19500, 2n2646 2n2647

    2N2646

    Abstract: SCR 2N2646 2N2646 CIRCUIT 2n2647 High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 2n2646 of symbol
    Text: 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.


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    PDF 2N2646 2N2647 2N2646 2N2647 SCR 2N2646 2N2646 CIRCUIT High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 2n2646 of symbol

    2N2646

    Abstract: 2N2646 transistor TO-220 2N2646
    Text: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage


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    PDF 2N2646, 2N2647 MIL-PRF-19500, 2N2646 2N2646 transistor TO-220 2N2646

    2N2646

    Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"
    Text: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.


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    PDF 2N2646 2N2647 2N2646 2N2647 High power SCR SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"

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    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage


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    PDF 2N2417 2N2422, 33mW/Â 2N2646, 2N2647 MIL-PRF-19500,

    Untitled

    Abstract: No abstract text available
    Text: m 2N2646 \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A (PULSED) P diss 300 mW @ Tc = 25 °C Tj


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    PDF 2N2646 2N2646

    2N2646

    Abstract: unijunction transistor 2N2646 transistor transistor 2N2646 2n2646 package
    Text: 2N2646 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) SO V S00 mW @ Te = 25 0C


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    PDF 2N2646 1250C unijunction transistor 2N2646 transistor transistor 2N2646 2n2646 package

    transistor 2N2646

    Abstract: 2n2646 2n2646 pin Unijunction transistor 2N2646 of 2N2646 PHILIPS 2N2646 pin configuration 2N2646 transistor datasheet 2n2646 package 2N2646 CIRCUIT
    Text: 596 Z8Z. SbE D philips international • 7110a2b 0042bl0 b31 ■ PHIN J - 2 Z-Crt Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of Issue December 1990 Silicon unijunction transistor QUICK REFERENCE DATA PARAMETER SYMBOL CONDITIONS


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    PDF 711002b 004Eb 2N2646 -TO-18 VKBi-10V 7110a2b 004Sbl3 T-25-Q9 transistor 2N2646 2n2646 2n2646 pin Unijunction transistor 2N2646 of 2N2646 PHILIPS 2N2646 pin configuration 2N2646 transistor datasheet 2n2646 package 2N2646 CIRCUIT

    transistor motorola 2n2646

    Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
    Text: MOTOROLA SC DIODES/OPTO 25E D b3t.7HSS 0000*100 b WÊ7 2N2646 2N2647 PN Unijunction Transistors Silicon PN Unijunction Transistors . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:


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    PDF b3b7S55 2N2646 2N2647 2A-01 transistor motorola 2n2646 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646

    GES2646

    Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of
    Text: G E SOLID STATE 3875081 Öl G E SOLID STATE »T|3fl7SDÔl □D17tm 01E 1 7 999 fl J D T -“ 3 7 - a _ / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors


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    PDF 2N2646, 2N2647, GES2646, GES2647 GES2646 GES2647 2N2647 2N2646 11Z12 2N2646 terminal 2N2646 TO-92 2n2646 to 92 transistor GES2646 Unijunction transistor 2N2646 of

    2N2646

    Abstract: Unijunction transistor 2N2646 of 2N2646 Vp 2N2647 rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 2N2646 -pin configuration Maa 435
    Text: Datasheet central Sem iconductor Corp. 2N2646 2N2647 S IL I C O N UNIJUNCTION TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T O - 18 CASE* Manufacturers of World Class Discrete Semiconductors DESCRIPTION


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    PDF 2N2646 2N2647 2N2646, 2N2647 100fi 2N2646 Unijunction transistor 2N2646 of 2N2646 Vp rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 2N2646 -pin configuration Maa 435

    2N2646

    Abstract: transistor 2N2646 2n2646 pin 2N2646 PHILIPS MC8444 Unijunction transistor 2N2646 of 2N2646 pin configuration EB20
    Text: PHILIPS INTERNATIONAL Philips Semiconductors 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor QUICK R E F E R E N C E DATA PARAM ETER SYM BO L ~v EB2 emitter-base 2 voltage 'EM emitter current Pm


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    PDF 2N2646 -TO-18 MB81S5 MSB031 MCB443 MC8444 /vV450 MSA119 transistor 2N2646 2n2646 pin 2N2646 PHILIPS Unijunction transistor 2N2646 of 2N2646 pin configuration EB20

    2n2646

    Abstract: 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2840 2n4870 mu4891 *n2418
    Text: TARI E R UNIJUNCTION CENTRAL TYPE ; ' ! < i jj I ' í; •f : : ! •] :j ; ij ;j I INTRINSIC STANDOFF RATIO r 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420 2N2420A 2N2420B 2N2421 2N2421A 2N2421B 2N2422 2N2422A 2N2422B 2N2646


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    PDF 0D00E37 0000SE3 O-105 O-106 2n2646 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2840 2n4870 mu4891 *n2418

    2N2646

    Abstract: 2N2646-47 scr firing D5J45 2N2646.47 2ampe
    Text: Silicon D5J45 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ratings: 2 5 °C Power Dissipation (Note 1) RMS Emitter Current Peak Emitter Current (Note 2) Emitter Reverse Voltage


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    PDF D5J45 2N2646-47 35Volts D5J45 2N2646 scr firing 2N2646.47 2ampe

    2N2646

    Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
    Text: Boca Semiconductor Corp. BSC P N U nijunction T ran sistors Silicon PN Unijunction Transistors 2N2646 2N2647 . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature: • Low Peak Point Current — 2/xA (Max)


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    PDF 2N2646 2N2647 2A-01 Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647

    2n2646 pin

    Abstract: 2N2646 pin configuration 2N2646 -pin configuration 2N2646 silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS
    Text: PHILIPS INTERNATIONAL WM 711D A2 b 0042b l0 b31 • P H I N 5bE D Philips Semiconductors T-2 2N2646 Data sheet status Preliminary specification date of issue Decem ber 1990 S'-O*? Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL ~VeB2 PARAMETER CONDITIONS


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    PDF 0042bl0 2N2646 -TO-18 MCB443 2N2646 711Dfl2b 0042L 2n2646 pin 2N2646 pin configuration 2N2646 -pin configuration silicon unijunction transistor unijunction transistor transistor 2N2646 2N2646 CIRCUIT 2n2646 package 2N2646 PHILIPS

    2N2646

    Abstract: scr firing scr firing circuit D5J37 2N2646-47
    Text: Silicon D5J37 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. ABSOLUTE MAXIMUM RATINGS: 25°C (Note 1) Pow er D issipation RMS Em itter C urrent Peak Em itter C urrent 300 mw 50 ma 2 amperes 30 volts


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    PDF 2N2646-47 10/xfd D5J37 2N2646 scr firing scr firing circuit

    2N2646 motorola

    Abstract: 2N2647 2N2646 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
    Text: M O T O R O L A SC D IOD ES / OP TO 95E D b3b755S QDÖQTQO b m T-iJ'U 2N2646 2N2647 P N Unijunction T ran sisto rs Silicon PN Unijunction Transistors . . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:


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    PDF b3b755S 2N2646 2N2647 2N2646 motorola 2N2647 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264

    2N2646-47

    Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
    Text: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘


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    PDF 2N2646-47 30Volts 35Volts 10/xF D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN

    2N2646

    Abstract: D5J43
    Text: Silicon D5J43 Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b s o lu te m axim um ra tin g s : 2 5 ° C (Note 1) 300 m W 50 mA 2 Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘ -6 5 ° C to + 1 5 0 ‘


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    PDF D5J43 2N2646-47 30Volts D5J43 2N2646

    2n2646 2n2647

    Abstract: 2N2646 n2646
    Text: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current


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    PDF 2N2646, 2N2647 2n2646 2n2647 2N2646 n2646

    Unijunction transistor 2N2646 of

    Abstract: 2N2646P
    Text: N AMER PHILIPS/DISCRETE b'lE D • bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E DATA SYM BOL PARAM ETER


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    PDF 2N2646 C8444 Unijunction transistor 2N2646 of 2N2646P

    transistor 2N2646

    Abstract: 2N2646 pin configuration 2n2646 2n2646 pin Transistor 2N2646 PIN 2n2646 package 2N2646 -pin configuration Unijunction transistor 2N2646 of 2N2646 CIRCUIT silicon unijunction transistor
    Text: N AMER P H I L I P S / D I S C R E T E bTE D bbSBTBl DDEfllOM 77b P h ilip s S em ico n d u cto rs 2N2646 Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor Q U IC K R E F E R E N C E D A T A SYM BOL _V eB2


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    PDF 2N2646 -TO-18 002fllD7 transistor 2N2646 2N2646 pin configuration 2n2646 2n2646 pin Transistor 2N2646 PIN 2n2646 package 2N2646 -pin configuration Unijunction transistor 2N2646 of 2N2646 CIRCUIT silicon unijunction transistor