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    semicoa 2N2222A

    Abstract: 2N2222 die CP2222A SD2222A 2c2222
    Text: Data Sheet No. CP2222A 2N2219A 2N2222A Chip Type 2C2222AKV Geometry 0400 Polarity NPN REF: MIL-PRF-19500L/255 20 MILS E B 20 MILS Chip type 2C2222AKV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance


    Original     		PDF CP2222A 2C2222AKV 2N2219A 2N2222A MIL-PRF-19500L/255 MIL-PRF-19500L 2N2222A, 2N2222, 2N2219, semicoa 2N2222A 2N2222 die CP2222A SD2222A 2c2222

    Untitled

    Abstract: No abstract text available
    Text: P FORWARDINTERNATIONAL ELECTRONICS LTD. 2N2222 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Colector-Bnittef Voltage: VCBO=30V * Cofcctor Dissipation: Pc max =625 mW ABSOLUTE MAXIMUM RATINGS at Tamb=25'C C haracteristic


    OCR Scan     		PDF 2N2222 300uS, 150mA 500roA 150mA 500mA

    s parameters of 2N2222

    Abstract: 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit 2n2222a 2N2219
    Text: M A X IM U M RATINGS Rating Symbol 2N 2219 2N2222 2N2218A 2N2219A 2N2222A Unit Vdc C o lle cto r-E m itte r Voltage v CEO 30 40 Collector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 6.0 Vdc m Adc C o lle ctor C u rrent — C ontinuous •c


    OCR Scan     		PDF 2N2222 2N2218A 2N2219 2N2219A 2N2222A s parameters of 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit

    2N2222A motorola

    Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
    Text: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc


    OCR Scan     		PDF 2N2219 2N2222 2N2218A 2N2219A 2N2222A 2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola

    2n4854

    Abstract: 2N4855
    Text: TYPES 2N4854, 2N4855 N-P-N, P-N-P DUAL SILICON TRANSISTORS B U L L E T IN NO D L-S 7 2 1 1 6 9 4 , M A R C H 1 97 2 DESIGNED FOR COMPLEMENTARY MEDIUM-POWER HIGH-SPEED SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • 2N4854 Electrically Similar to 2N2222/2N2907


    OCR Scan     		PDF 2N4854, 2N4855 2N4854 2N2222/2N2907 2N2221/2N2906

    tl 2n2222

    Abstract: 2N2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222
    Text: N AMER PHILIPS/DISCRETE b'IE D • bbS3T31 OOEÛÜflb 12G I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -18 metal envelope w ith the collector connected to the case. They are primar­ ily intended for high speed switching. The 2 N 2 2 2 2 is also suitable for d.c. and v.h.f./u.h .f. amplifiers.


    OCR Scan     		PDF bbS3T31 2N2222 2N2222A 2N2222A 100ms tl 2n2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222

    2N2217

    Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
    Text: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA


    OCR Scan     		PDF 2N2217 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A 2N2222A) 2N2218, 2N2221 KH 2222 ic TT 2222 ip 2222A 2N2218

    2N2222A plastic package

    Abstract: TPQ2907A transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904
    Text: QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


    OCR Scan     		PDF 14-pin TPQ2222A TPQ3904 TPQ2907A TPQ3906 TPQ6502 2N2222 2N2907 2N2907A 2N3904 2N2222A plastic package transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904

    2n2222 itt

    Abstract: 2N2222A itt itt 2n2222 BSY86 BSY85 BSY83 itt 2N2222A 2N2219 transistor BSY84 2N2218A
    Text: ITT Semiconductors NPN Transistors N P N S ilicon M edium Current Transistors Metal Can TO-39 or TO-18 . V CBo up to 75V. O u tlin e D raw ing H o. 66 ap plies fo r TO -39 ty p es . O u tlin e D raw ing N o. 65 ap plies fo r TO -18 ty p es . M ax. ratings


    OCR Scan     		PDF 2N2218 7785A 2N2218A 31275X 2N2219 27786X 2N2219A 31276H 2N2221 31272E 2n2222 itt 2N2222A itt itt 2n2222 BSY86 BSY85 BSY83 itt 2N2222A 2N2219 transistor BSY84

    itt 3906

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
    Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.


    OCR Scan     		PDF 14-lead MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 MC3491P* MC7437L MC7438L MC75451P itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222

    2n2222 itt

    Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
    Text: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51


    OCR Scan     		PDF VCBOUPtOl20V. 750mA. 800mW BSY51 BSY54 BSY55 BSY56 BSY87 BSY88 BSY90 2n2222 itt 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711

    2n2222 2n5401 2n5551

    Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown are iO NPN types, 15 PNP types, and 12 NPN/PNP complementary pairs.


    OCR Scan     		PDF 14-pin 2N2222 2N2907 TPQ6600 2N2483 2N3738 TPQ6600A 2N3799 TPQ6700 2N3904 2n2222 2n5401 2n5551 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222

    fairchild 2N2222A

    Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
    Text: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min


    OCR Scan     		PDF QDE75D4 2N718A 2N1613 fairchild 2N2222A 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222

    tpq2907

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays


    OCR Scan     		PDF 05G433Ã 14-pin TPQ7051 TPQ6700 TPQ6600A TPQ6600 TPQ6502 2N3904 2N3906 tpq2907

    NPN transistor 2n2222 beta value

    Abstract: beta transistor 2N2222 2n2222 iv 2N2222 2n2222 h parameter values 2N2222 NPN Transistor features 2N2222 transistor 2n2907 transistor data sheet 2N2907 EL2021
    Text: EL2021C étantec KiGMp c w g r m ä ü c e rat eocwcöTts EL2021C Monolithic Pin Driver F e a tu r e s G e n e r a l D e s c r ip tio n • W ide range o f program m able analog o u tp u t levels • 0.5 A m pere o u tp u t drive w ith external tran sisto rs


    OCR Scan     		PDF EL2021CJ MDP0031 18-Pin 3121S57 NPN transistor 2n2222 beta value beta transistor 2N2222 2n2222 iv 2N2222 2n2222 h parameter values 2N2222 NPN Transistor features 2N2222 transistor 2n2907 transistor data sheet 2N2907 EL2021

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE A N 1082 Sim ple Design for a 4 -2 0 mA Transm itter In te rfa c e Using a M otorola Pressure Sensor Prepared by: Jean Claude Hamelain Motorola Toulouse Application Lab Manager INTRODUCTION Pressure is a very important parameter in most industrial


    OCR Scan     		PDF TZA120

    Untitled

    Abstract: No abstract text available
    Text: EL2021C étantec KiGMp c w g r m ä ü c e rat eocwcöTts EL2021C Monolithic Pin Driver F e a tu r e s G e n e r a l D e s c r ip tio n • Wide range o f programmable analog output levels T he E L 2021 is designed to drive programmed voltages into dif­ ficult loads. I t has the required circuitry to be used as the pin


    OCR Scan     		PDF EL2021C

    2N2222A itt

    Abstract: itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild 2N2369A 2N914
    Text: Fairchild Semiconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C


    OCR Scan     		PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2N2222A itt itt 2N2222A 2n2222 itt BFR37 BSX20 2n2222a ITT 2N2219 BSY87 2n2222a fairchild

    2n2222 itt

    Abstract: BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50
    Text: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N PN Silicon High Speed Saturated Switching Transistors M etal Can T O IS REFERENCE T A B LE For medium speed - see General Purpose S ection. C H A R A C TE R IS TIC S @ 25"C


    OCR Scan     		PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2n2222 itt BSY86 ME6002 ME6102 BFY72 MA8003 fairchild semiconductors 2n2222 micro electronics ME8003 BFY50

    Untitled

    Abstract: No abstract text available
    Text: p semrofl ¡J8BBBBB88& | M iwiHBBffi .rfHHHHHHHHMh. mssssP % » 1 1 I I ititn nnnn hhhhhhk-. ^88888 % # ><>niftBHhr 1 D a ta S h e e t No. C P 2 22 2 A $ id L SEMICONDUCTORS 2N2219A 2N2222A Chip Type 2C2222AKV Geometry 0400 Polarity NPN REF: MIL-PRF-19500L/255


    OCR Scan     		PDF J8BBBBB88& 2N2219A 2N2222A 2C2222AKV MIL-PRF-19500L/255 2C2222AKV MIL-PRF-19500L

    2N2222A JANTX

    Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
    Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA


    OCR Scan     		PDF MM6427 BSS52 BSS51 BSS50 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N2222A JANTX 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N2221 BSX48 CIL352 BSX21 BFY76 BCY59-9 BCY59-8 BCY59-7 BCY59-10 BCY59

    saa 1094

    Abstract: LG tv remote control schematic ir ic transistor BU 109 T1P29B thermo couple t
    Text: fu ¡in fitti lattàia, Cutot lu i h a i bltqm u F lG l'R E 18. 4-20mA Current Loop Receiver with Input Overload Protection. PO L RE 19. 0-20mA/3-5V Receiver l/sing RCV420. 4 .: s Burr-Brown IC Data Book—Linear Products I Or, btt Culutr Sirria 2/ MM-Wfftt Utt Otifl


    OCR Scan     		PDF 4-20mA 0-20mA/3-5V RCV420. 75tiV/ 47000HV) 92\lA saa 1094 LG tv remote control schematic ir ic transistor BU 109 T1P29B thermo couple t

    transistor e2w

    Abstract: book TRANSISTOR 2N2222
    Text: For Immediate Assistance, Contaci M Local Salesperson IRR-BWOWW« XTR101 AVAILABLE IN DIE Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER FEATURES APPLICATIONS • INSTRUMENTATION AMPLIFIER INPUT Low Offset Voltage, 30nV max Low Voltage Drift, 0.75|iV/°C max


    OCR Scan     		PDF XTR101 4-20mA transistor e2w book TRANSISTOR 2N2222