| 2N2218ALJ |
|
Semico
|
Package = TO-5 Level = Jantxv Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = 6.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.30 |
|
Original |
PDF
|
| 2N2218ALJAN |
|
New England Semiconductor
|
BJT, NPN, Dual Transistor, IC 0.8A |
|
Original |
PDF
|
| 2N2218ALJAN |
|
New England Semiconductor
|
NPN SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
| 2N2218ALJANS |
|
New England Semiconductor
|
BJT, NPN, Dual Transistor, IC 0.8A |
|
Original |
PDF
|
| 2N2218ALJANS |
|
New England Semiconductor
|
NPN SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
| 2N2218ALJANTX |
|
New England Semiconductor
|
NPN SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
| 2N2218ALJANTXV |
|
New England Semiconductor
|
NPN SWITCHING SILICON TRANSISTOR |
|
Original |
PDF
|
| 2N2218ALJTX |
|
New England Semiconductor
|
BJT, NPN, Dual Transistor, IC 0.8A |
|
Original |
PDF
|
| 2N2218ALJTXV |
|
New England Semiconductor
|
BJT, NPN, Dual Transistor, IC 0.8A |
|
Original |
PDF
|
| 2N2218ALJX |
|
Semico
|
Package = TO-5 Level = Jantxv Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = 6.0 Ic (A) = 0.80 Power (W) ta = 0.8 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 300 VCE(sat) (V) = 0.30 |
|
Original |
PDF
|