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Catalog Datasheet	MFG & Type	PDF	Document Tags
DIODE smd marking 52A Abstract: SPB80N06S2L-09 SPP80N06S2L-09 2N06L09 Text: SPP80N06S2L-09 SPB80N06S2L-09 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 8.5 mΩ ID 80 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO263-3-2 P-TO220-3-1 • Avalanche rated	Original	PDF	SPP80N06S2L-09 SPB80N06S2L-09 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6031 2N06L09 P-TO263-3-2 DIODE smd marking 52A SPB80N06S2L-09 SPP80N06S2L-09 2N06L09
2n06l09 Abstract: SPB80N06S2L-11 SPP80N06S2L-11 2N06L Text: SPP80N06S2L-11 SPB80N06S2L-11 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS 55 RDS on 11 m ID 80 A P-TO263-3-2 Type Package	Original	PDF	SPP80N06S2L-11 SPB80N06S2L-11 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6035 2N06L09 P-TO263-3-2 2n06l09 SPB80N06S2L-11 SPP80N06S2L-11 2N06L
2N06L09 Abstract: D52A smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09 Text: SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 8.5 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated	Original	PDF	SPP80N06S2L-09 SPB80N06S2L-09 Q67060-S6031 2N06L09 Q67060-S6032 BSPP80N06S2L-09 BSPB80N06S2L-09, 2N06L09 D52A smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09
SMD MARKING CODE g23 Abstract: 2N06L09 ANPS071E IPB80N06S2L-09 IPP80N06S2L-09 PG-TO263-3-2 smd marking g23 smd diode UM 09 Text: IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB80N06S2L-09 IPP80N06S2L-09 PG-TO263-3-2 PG-TO220-3-1 SP0002-18743 2N06L09 SMD MARKING CODE g23 2N06L09 ANPS071E IPB80N06S2L-09 IPP80N06S2L-09 PG-TO263-3-2 smd marking g23 smd diode UM 09
2N06L09 Abstract: diode 57 fs100a DIODE smd marking 52A SMD MARKING CODE g23 Text: SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level VDS 55 R DS on 8.5 m ID 80 A P- TO263 -3-2 175°C operating temperature V P- TO220 -3-1 Avalanche rated dv/dt rated Type SPP80N06S2L-09	Original	PDF	SPP80N06S2L-09 SPB80N06S2L-09 Q67060-S6031 Q67060-S6032 2N06L09 BSPP80N06S2L-09 BSPB80N06S2L-09, diode 57 fs100a DIODE smd marking 52A SMD MARKING CODE g23
2N06L09 Abstract: INFINEON PART MARKING smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09 Q67060-S6031 Text: SPP80N06S2L-09 SPB80N06S2L-09 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 8.5 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated	Original	PDF	SPP80N06S2L-09 SPB80N06S2L-09 Q67060-S6031 Q67060-S6032 2N06L09 BSPP80N06S2L-09 BSPB80N06S2L-09, 2N06L09 INFINEON PART MARKING smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09 Q67060-S6031