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    2N 5684 Search Results

    2N 5684 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LPS5015-684MLC Coilcraft Inc General Purpose Inductor, 680uH, 20%, 1 Element, Ferrite-Core, SMD, 1919, ROHS COMPLIANT Visit Coilcraft Inc
    LPS6235-684MLC Coilcraft Inc General Purpose Inductor, 680uH, 20%, 1 Element, Ferrite-Core, SMD, 6262-35M, CHIP, 6262-35M, ROHS COMPLIANT Visit Coilcraft Inc
    PCH-45-684L Coilcraft Inc General Purpose Inductor, 680uH, 10%, 1 Element, AXIAL LEADED, ROHS COMPLIANT Visit Coilcraft Inc
    LPS6225-684MRC Coilcraft Inc General Purpose Inductor, 680uH, 20%, 1 Element, Ferrite-Core, SMD, 2424, CHIP, 2424, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    LPS5015-684MLB Coilcraft Inc General Purpose Inductor, 680uH, 20%, 1 Element, Ferrite-Core, SMD, 1919, ROHS COMPLIANT Visit Coilcraft Inc
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    2N 5684 Price and Stock

    onsemi 2N5684G

    TRANS PNP 80V 50A TO204
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    Microchip Technology Inc JANTX2N5684

    TRANS NPN 80V 50A TO-3
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    2N 5684 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5684 Microsemi PNP Transistor Original PDF
    2N5684 Motorola 50A PNP SILICON POWER TRANSISTOR 80V 300W Original PDF
    2N5684 On Semiconductor High-Current Complementary Silicon Power Transistors Original PDF
    2N5684 On Semiconductor 2N5684 - TRANSISTOR 50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE, CASE 197A-05, 2 PIN, BIP General Purpose Power Original PDF
    2N5684 On Semiconductor High-Current Complementary Silicon Power Transistors - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=50 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=300 Original PDF
    2N5684 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=50 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=300 Original PDF
    2N5684 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5684 API Electronics Short form transistor data Short Form PDF
    2N5684 Digitron 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 300 WATTS Scan PDF
    2N5684 Diode Transistor Transistor Short Form Data Scan PDF
    2N5684 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5684 General Transistor Power Transistor Selection Guide Scan PDF
    2N5684 Mospec POWER TRANSISTORS(50A,300W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=50 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=300 Scan PDF
    2N5684 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5684 Motorola European Master Selection Guide 1986 Scan PDF
    2N5684 Motorola The European Selection Data Book 1976 Scan PDF
    2N5684 Motorola Power Transistor Selection Guide Scan PDF
    2N5684 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5684 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5684 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N 5684 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


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    MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801 PDF

    BUY69

    Abstract: No abstract text available
    Text: Ptot Typ type T a = 25 °C 100 oc W w 2N 5685 2N 5686 5 5 300 300 2N 5758 2N 5759 2N 5760 5 5 5 2N 6326 2N 6327 2N 6328 5 5 5 TC = 25 °C (100 OC) @ ic VCEO ICD min V max A min hFE max 60 80 50 50 15 15 60 60 25 25 150 150 150 100 120 140 6 6 6 25 20 15


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    12eceivers BUY69 PDF

    transistor 2N 3792

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PN P TO-3 VcEO sus VOLTS Ic (m ax) A M PS 2N 3789 60 10 2 5 -9 0 @ l/2 2N 3790 80 10 2N 3791 60 2N 3792 hFE@ V CE VcE(sat) @ I cA b (V @ A /A ) Pr D * W ATTS fj (M H z) l@ 4/.4 150 4 2 5 -9 0 @ l/2


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    2N5685

    Abstract: 2N5685 MOTOROLA 2n5684 MOTOROLA 2N5686 2N5686 amplifier 2N5686
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N 5684 High-Current Com plem entary Silicon Power TVansistors NPN 2N5685 . . . designed for use In high-power amplifier and switching circuit applications. • • • 2N 5686* High Current Capability — lc Continuous = 50 Amperes.


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    2N5685 2N5684 2N5686 2N5685 MOTOROLA MOTOROLA 2N5686 2N5686 amplifier 2N5686 PDF

    2N5001

    Abstract: 2n5149 2N5147 2N5000 transistor 2N 3792 2N4999 2N5001 ti APPLICATION for MIN 5758 2N4998 2N5148
    Text: TYPES 2N 4999, 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR A N S IS TO R S W ITH C O M P U TER -D ESIG N ED IS O TH E R M A L G E O M E TR Y I * For Complementary Use With 2 N 49 98, 2 N 50 00, 2N 5 1 4 8 , and 2N 51 50


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    2N4999, 2N5001, 2N5147. 2N5149 2N4998, 2N5000, 2N5148, 2N5150 2N4999. 2N5001 2N5001 2N5147 2N5000 transistor 2N 3792 2N4999 2N5001 ti APPLICATION for MIN 5758 2N4998 2N5148 PDF

    BD368

    Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
    Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0


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    MJ4034 MJ4031 BD317 BD318 2N5629 2N6029 MJ4035 MJ4032 2N5630 2l\l6030 BD368 MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5631 PDF

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


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    2N6328

    Abstract: 2N6326 2n6328 texas instruments tip 410 transistor 2n6321 2N6327 2N6329 2N6330 2N6331 transistor BD 325
    Text: T Y P E S 2N6 3 26 , 2 N 6 3 2 7 , 2N6 3 28 N -P - N S I N G L E - D I F F U S E D M E S A S I L I C O N P O W E R T R A N S IS T O R S FOR P O W E R A M P L IF IE R A N D H IG H-SPEED-SW ITCHING APPLIC A TIO N S D ESIG NED FOR C O M P LE M E N TA R Y USE W ITH 2N 63 29, 2N 63 30, 2N6331


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    2N6326, 2N6327. 2N6328 2N6329, 2N6330, 2N6331 200-mJ 2N6326 2N6327 2N6328 2n6328 texas instruments tip 410 transistor 2n6321 2N6329 2N6330 2N6331 transistor BD 325 PDF

    2N5685

    Abstract: leistungstransistoren 2N5683 2N5684 2N5686 BU105
    Text: TY P ES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRAN SISTO RS FOR POW ER-A M PLIFIER A N D HIGH-SPEED -SW ITC H IN G A P PLIC A TIO N S D ESIG NED FOR C O M P LE M E N TA R Y USE W ITH 2 N 56 83, 2N 5684 • 300 Watts at 2B°C Case Temperature •


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    2N5685, 2N5686 2N5683, 2N5684 2N5685 2N5686 leistungstransistoren 2N5683 2N5684 BU105 PDF

    2N6884

    Abstract: 2N5683 2N5684 c358c 2N5685 2N4998 TIP640
    Text: TYPES 2NS683, 2N5684 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIER A N D H IG H-SPEED-SW ITCHING A P PLIC A TIO N S DESIG N E D FOR C O M P LE M E N TA R Y USE W ITH 2N 5685, 2IM5686 V • 300 Watts at 25°C Case Temperature | •


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    2NS683, 2N5684 2N5685, 2IM5686 2N5683 2N5684 2N6884 c358c 2N5685 2N4998 TIP640 PDF

    2N5680

    Abstract: 2N5867
    Text: PNP S A T V O L T A G E S M a x . m BREAKDO W N VO LTAG ES Tl • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST !c 'c C ASE V CB V CE V EB V CE (V) (A) M in. M ax. (A) !b (A) V CE (V) V BE (V) 2N5613 TO-3 80 60 5.5 5 2.5 70 200 2.5 0.5 1.5 2 2N 5615


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    2n5613 2n5615 2n5617 2n5619 2n5621 2n5623 2n5625 2n5627 2n5677 to-61 2N5680 2N5867 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    4902

    Abstract: APPLICATION for MIN 5758 2N5153 APPLICATION MIN 5758
    Text: Ptot@ Typ type PNP T a =25 °C 100 oc} W TC=25 OC (100 oc W VCEO min V 'CD max A min TIP 527 4 (60) -2 0 0 - 8 20 100 -4 TIP 544 5 150 -1 0 0 - 6 25 100 -3 TIP 545 5 150 -1 2 0 - 6 20 80 -3 TIP 546 5 150 -1 4 0 - 6 16 60 -3 5 5 5 175 175 175 - 60 - 80 -1 0 0


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    TLP 527

    Abstract: tlp527 2N 60 Application notes TIP527 TIP528 2N4998 2N5685 TIP640
    Text: TYPES TIP527, TIP528 P-N-P SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIE R A N D H IG H -SPEED -SW ITC H IN G A P PLIC A TIO N S r mechanical data • 20 0 V Min V B R C E O • 8-A Rated Continuous Collector Current • 60 Watts at 100°C Case Temperature


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    TIP527, TIP528 TLP 527 tlp527 2N 60 Application notes TIP527 2N4998 2N5685 TIP640 PDF

    2N6331

    Abstract: 2N6330 2N6326 2N6327 2N6328 2N6329 2n6328 texas instruments transistor 2N 3792 PC15A LW 2411
    Text: T Y P E S 2 N 6 3 2 9 , 2N6330, 2N6331 P - N - P S I N G L E - D I F F U S E D M E S A S IL IC O N P O W E R T R A N S I S T O R S FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25°C Case Temperature


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    2N6329, 2N6330, 2N6331 2N6326, 2N6327, 2N6328 200-mJ 2M6329 2N6330 2N6331 2N6326 2N6327 2N6328 2N6329 2n6328 texas instruments transistor 2N 3792 PC15A LW 2411 PDF

    TLP647

    Abstract: TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
    Text: TYPES TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED IFOR COMPLEMENTARY USE WITH TIP640, TIP641, TIP642 175 W at 25°C Case Temperature • Min h f e of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100 mJ Reverse Energy Rating


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    TIP645, TIP646. TIP647 TIP640, TIP641, TIP642 TLP647 TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP645 TIP646 PDF

    transistor 2N 3792

    Abstract: 2N5153 2n6151 2N5005 2N5151 2N5003 TIP 642 transistor 2N5005 TO-59 2N5002 2N5004
    Text: TYPES 2N5003, 2 N 5 0 0 5 . 2N5151. 2N51S3 P-N-P SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N5002, 2N5004, 2N5152, 2N5154 15 mJ Reverse Energy Rating with I q - 10 A and 4 V Reverse Bias


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    2N5003, 2N5005. 2N5151. 2N51S3 2N5002, 2N5004 2N5152 2N5154 2NB003, 2N500S transistor 2N 3792 2N5153 2n6151 2N5005 2N5151 2N5003 TIP 642 transistor 2N5005 TO-59 2N5002 PDF

    TIP544

    Abstract: tlp546 2N5758 2N5759 2N5760 TIP545 TIP546 2n5148 2N5004 2N4998
    Text: T Y P E S TIP 54 4. T IP 5 4 5 , TIP546 P - N - P S I N G L E - D I F F U S E D S IL IC O N P O W E R T R A N S IS T O R S FOR P O W E R A M P L IF IE R A N D HIGH -SPEED -SW ITC H IN G A P PLIC A TIO N S RECO M M EN D ED FOR C O M P LE M E N TA R Y USE W IT H 2 N 57 58, 2 N 57 59, 2 N 57 60


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    TIP544, TIP545, TIP546 2N5758, 2N5759, 2N5760 TIP544 TIP545 TIP546 tlp546 2N5758 2N5759 2N5760 2n5148 2N5004 2N4998 PDF

    TIP 642 transistor

    Abstract: transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor
    Text: TYPE 2N5333 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4300 15 W at 100°C Case Temperature Max V E|„, of 0.45 V at 1 A Typ ton of 150 ns at 1 A l c lc


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    2N5333 2N4300 150ns TIP 642 transistor transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    2N5683

    Abstract: digitron bound brook 2N5686 2n5685 2N5684 saia amplifier 2N5686 T 2109 063T1 TM-35
    Text: DIGITRON^ELECTRONIC COR 4BE D • EûM2L07 □□□□□54 Tt,7 ■ jp ; 1 9 9 1 HIGHWAY 2 2 W ES T BOUND BROOK, N EW J E R S E Y 0 8 8 0 5 t DGE W 2N5683,2N5684 PNP 2N5685,2N5686 NPN 50 A M PER E C O M PLEM EN TA R Y SILIC O N POWER T R A N S IS T O R S


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    M2L07 2N5683 2N5684 2N5685 2N5686 25Adc digitron bound brook saia amplifier 2N5686 T 2109 063T1 TM-35 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    TRANSISTOR bd 108

    Abstract: transistor TIP 662 Horizontal-Deflection Output transformer tip 410 transistor transistor BD 325 BU108 leistungstransistoren BUY69 BU105 2N5683
    Text: BU 108 NPN SIL IC O N POWER T R A N S IST O R D E S IG N E D FOR H IG H V O L T A G E C.R.T. S C A N N IN G • • • V c e x Rating — 1500 V Peak Collector Current Rating — 5 Amps Fast Switching — tf at 4.5 Am ps 0.7 Microsecond Typical Development Type


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    tip 410 transistor

    Abstract: BD410 transistor BD 325 transistor TIP 662 transistor BD 253 tip+410+transistor B 660 TG transistor 2N 5684 BU105 2N6330
    Text: BD410 NPN T R IP L E D IF F U S E D SIL IC O N T R A N S IST O R 1171 A F -A M P L IF IE R FOR H IG H S U P P LY V O L T A G E • • • • • • Control Circuits Vertical-Output Stages in TV-Sets General Purpose Application VcER typ. 450 V at R b e = 1 k£2


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    BD410 MIL-STD-750. tip 410 transistor BD410 transistor BD 325 transistor TIP 662 transistor BD 253 tip+410+transistor B 660 TG transistor 2N 5684 BU105 2N6330 PDF