2N 326 TRANSISTOR Search Results

2N 326 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

2N 326 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
KT 819 transistor Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18 Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e	OCR Scan	PDF
BU 290A Abstract: 3055N 2N3055 3773 P BDW 38 BD130 2 amp 20 - 60v diode p1060 BD181 Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PRO FESSIO N A L/CO M M ERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 2N 2N 2N 2N 2N	OCR Scan	PDF
2N3584 Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583 Text: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension	OCR Scan	PDF	CB-72 2N3584 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583
PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A Abstract: BUX53 Text: Power transistors • NPN « Epitaxial Planar » Am plifier and switching NP N « Planar E p itaxte » A m p lific a tio n e t co m m u ta tio n Type Case Boitier tot W V CEx 'c VCEO (V) (A) h21E m in max 'c (A) VCEsat / ' C (V) / (A /l('AB) fT (MHz)	OCR Scan	PDF	Tpu76 PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A BUX53
transistor Amp 3055 Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055 Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@	OCR Scan	PDF	625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
8 pin ic 3773 Abstract: No abstract text available Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442	OCR Scan	PDF	E3B33c 000DQ5M lo-32 8 pin ic 3773
2N6758 Abstract: 6757 Text: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.	OCR Scan	PDF	2N6758 1L-S-19500/542A 2N6758 6757
BC 641 Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107 Text: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76	OCR Scan	PDF
2N2243 Abstract: H21E 2N3439 pnp case to-39 Text: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: 3QE D • ^.3 7 .15 7=12^537 0031143 û WÊ SGS-THOMSON [»œiLegTrtHÎ «! 2N2904/2N2905 2N2906/2N2907 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904,2N2905,2N2906 and 2N2907 are sili con planar epitaxial PNP transistors in JedecTO-39	OCR Scan	PDF	2N2904/2N2905 2N2906/2N2907 2N2904 2N2905 2N2906 2N2907 JedecTO-39 2N2904, 2N2905)
LKI300 Abstract: ao 6786 2n6785 Unitrode 678-6 dioda s31 Text: TH W T T R O ^ r T O R 9347963 D in i c1347clki3 0 0 1 0 5 3 b F UNITRODE CORP 92D 10536 D POWER MOSFET TRANSISTORS jtx jtxv 400 Volt, 3.6 Ohm N-Channel T - 3 <?~o7 FEATURES • Fast Switching « Low Drive Current • Ease of Paralleling • No Second Breakdown	OCR Scan	PDF	c1347c D1DS41 LKI300 ao 6786 2n6785 Unitrode 678-6 dioda s31
N mosfet 100v 500A Abstract: No abstract text available Text: DE~1 cl B 4 7 citi3 OOIQSBM 1 UNITRODE. CORP 9347963 U N I T R O D E CORP 920 POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Ghannel 1Û5 2 4 D7"-J^-o7 JTX jtkvI K FEATURES DESCRIPTION • • • • • Th e Unltrode power M O SFET design u tilize s the m ost advanced technology available.	OCR Scan	PDF	2N6782 N mosfet 100v 500A
N2222 Abstract: 2N222A 2N222 2N222-A 2N2708 2n3600 N222 BFS59 BFS60 BFS61 Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n M axim u m Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A B F S 59 B F S 60 BFS61 B FX84 BFX8S B F Y 50 BFY51 B FY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT 8 6 ZT 8 7 ZT88 ZT89	OCR Scan	PDF	BFS59 BFS60 BFS61 BFS96-98 BFX84 2N3571 2N3572 2N3600 at60MHz tat200 N2222 2N222A 2N222 2N222-A 2N2708 N222
sy 710 diode Abstract: IC 6757 diode sy 710 2N6758 2N6757 Text: POWER MOSFET TRANSISTORS , JTX 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability • Qualified to M IL-S-19500/542A 2N6757 J' JTX' JTXV 2N6758 DESCRIPTION	OCR Scan	PDF	2N6757 2N6758 IL-S-19500/542A 2N6757 sy 710 diode IC 6757 diode sy 710 2N6758

TO205AD Abstract: 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866 2N4428 Text: IF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE 145A-09 (.300” Stud) CASE 215-02 CASE 244-04 (.280" Stud) CASE 79-03 (TO-205 Type) CASE 305-01 (.204" Stud) CASE 305A-01 (.204” Pill) 3ASÊ 316-01 For UHF Applications	OCR Scan	PDF	O-205AD O-205 05A-01 MRF313, 2N6439 T0-205 MRF525* 2N4428 2N5160f TO205AD 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866
2n6788 Abstract: 2N6787 S/2N6787 Text: 2N6787 2N6788 POWER MOSFET TRANSISTORS 100 Volt, 0.30 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Ros»h> and a high transconductance.	OCR Scan	PDF	2N6787 2N6788 2N6787 2n6788 S/2N6787
y 6763 Abstract: No abstract text available Text: TE UNITRODE CORP 9347963 D E \| c1347c]b3 DDIOSOÛ 3 \| ~ U NI TRO DE CORP 92D 10508 D POWER MOSFET TRANSISTORS , 1TX JTXV 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second Breakdow n • Excellent T e m p e ra tu re S tability	OCR Scan	PDF	1347c 2N6764 DD1GS11 y 6763
2n222 TRANSISTOR Abstract: N2222 2n222a transistor 2n222a 2n222A TRANSISTOR n3055 2n222a npn transistor 2N222-A 2N222 ZT1482 Text: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.	OCR Scan	PDF	ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 2n222 TRANSISTOR N2222 2n222a transistor 2n222a 2n222A TRANSISTOR n3055 2n222a npn transistor 2N222-A 2N222
2N5862 Abstract: 2N5660 3051 3026LS 2N5680 3036 100CC 2N5661 2N5662 2N5663 Text: JAN, JAN, JAN, JAN, POWER TRANSISTORS 2 Amp, 300V, Planar NPN FEA TU R ES • Meets MlL-S-19500/454 • Collector-Base Voltage: up to 400V » D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & JANTXV 2N5660	OCR Scan	PDF	2N5660 2N5661 2N5662 2N5663 MlL-S-19500/454 2N5660 2N5662 2N5661, 2NS663 2N5862 3051 3026LS 2N5680 3036 100CC 2N5663
MRF309 Abstract: 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177 MRF604 Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.	OCR Scan	PDF	MRF229 MRF604 2N4427 MRF553 317D-01 MRF607 2N6255 2N3553 MRF237* MRF207 MRF309 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177
C495 transistor Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra	OCR Scan	PDF	BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
2N3419 Abstract: 2n341 2N3420 2N3421 Text: POWER TRANSISTORS JAN, JANTX, & JANTXV 2N3418 JAN, JANTX, & JANTXV 2N3419 JAN, JANTX, & JANTXV 2N3420 JAN, JANTX, & JANTXV 2N3421 3 Amp, 80V, Planar NPN FEATURES • M eets MIL-S-19500/393 • C ollector-Base Voltage: up to 125V • Peak Collector Current: 5A	OCR Scan	PDF	2N3418 2N3419 2N3420 2N3421 MIL-S-19500/393 2N3418-2N3421 2n341 2N3421
2N6510 Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514 Text: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass	OCR Scan	PDF	2N6510 2N6511 2N6512 2N6513 2N6514 2NG510 2N6514
2n222a Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482 Text: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.	OCR Scan	PDF	ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 2n222a ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132

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2N 326 TRANSISTOR Search Results

2N 326 TRANSISTOR Result Highlights (5)

2N 326 TRANSISTOR Datasheets Context Search

KT 819 transistor

BU 290A

2N3584

PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A

transistor Amp 3055

8 pin ic 3773

2N6758

BC 641

2N2243

Untitled

LKI300

N mosfet 100v 500A

N2222

sy 710 diode

TO205AD

2n6788

y 6763

2n222 TRANSISTOR

2N5862

MRF309

C495 transistor

2N3419

2N6510

2n222a