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    2N 303 TRANSISTOR Search Results

    2N 303 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N 303 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    future scope of jfet

    Abstract: 2N5638 2N5638 equivalent 2N5639 2N5369RLRA 2N5638RLRA
    Text: 2N5638, 2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for chopper and high–speed switching applications. http://onsemi.com • Low Drain–Source “ON” Resistance:


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    2N5638, 2N5639 2N5638 2N5638 2N5638) r14525 2N5638/D future scope of jfet 2N5638 equivalent 2N5639 2N5369RLRA 2N5638RLRA PDF

    2n5458

    Abstract: 2N5457 application note 2N5457 2N5638 2N5639
    Text: 2N5457, 2N5458 2N5457 and 2N5458 are Preferred Devices JFETs - General Purpose N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com


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    2N5457, 2N5458 2N5457 2N5458 r14525 2N5457/D 2N5457 application note 2N5638 2N5639 PDF

    NPN transistor 2n 3904

    Abstract: tr 2n3904 2N3904 pin diagram 2N3904 2N3904 transistor data sheet free download data sheet transistor 2n3904 2N3904 equivalent tr 3904 h 2n3904 2n3904 specification
    Text: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage


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    2N3903, 2N3904 2N3903 2N3903/D NPN transistor 2n 3904 tr 2n3904 2N3904 pin diagram 2N3904 2N3904 transistor data sheet free download data sheet transistor 2n3904 2N3904 equivalent tr 3904 h 2n3904 2n3904 specification PDF

    2N3904

    Abstract: equivalent al 2n3904 2n3904 application 2N3904RLRA 2N3904 equivalent 2N 3904 transistor 2N3903 2N3903RLRM 2N3904RL1 2N3904RLRE
    Text: 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO


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    2N3903, 2N3904 2N3903 r14525 2N3903/D 2N3904 equivalent al 2n3904 2n3904 application 2N3904RLRA 2N3904 equivalent 2N 3904 transistor 2N3903RLRM 2N3904RL1 2N3904RLRE PDF

    transistor bd 202

    Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
    Text: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    T0-220AB O-220AB 5-40V BD710 CB-244 transistor bd 202 transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711 PDF

    BDX 241

    Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    T0-220AB O-220AB 5-40V BD710 BDX 241 transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055 PDF

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 PDF

    BD 139 140

    Abstract: bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117
    Text: plastic power transistors c transistors de puissance plastiques THOMSON-CSF Type v CEO •c Ptot h 2iE / 1C VCE sat / >C / >B NPN | min PNP (V) (A) max (W) max (V) (A) I | (A) (A) high speed transistors 2N 5296 *s tf *t typ* max max max M (ws ) min (M Hz)


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    O-I26 CB-16 /TO-202 CB-203 CB-244 BD 139 140 bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117 PDF

    2N 3055

    Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
    Text: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )


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    TPu75 2N5294 2N6111 2N6109 2N 3055 2N3055 ESM434 BDX 71 ESM435 ESM142 84132N PDF

    Transistors bd 133

    Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
    Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20


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    TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135 PDF

    ci 4030

    Abstract: 2N4033 4030 IC 4033 4031 2N4031 2N4032 4033 LC150
    Text: 2N 4030 2N 4031 2N 4032 SILICON PLANAR PNP 21,4033 G E N E R A L PURPO SE A M P L IF IE R S A N D SW ITCHES The 2N 4030, 2N 4031, 2N 4032 and 2N 4033 are silicon planar epitaxial PN P transistors in Jedec TO -39 metal case primarily intended for large signal, low noise industrial applications.


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    2N4031 2N40315V -50mA ci 4030 2N4033 4030 IC 4033 4031 2N4032 4033 LC150 PDF

    BO241C

    Abstract: BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135
    Text: N PN Power transistors « Epitaxial Base » L F amplifier and switching » Transistors de puissance « Base épitaxiée » Amplification et commutation B F Type Compì. Case Boîtier Ptot W VcEO (V) *C (A) *21 E max min / 'C 1 (A) Tease 25 0 C iiC V c E sa t


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    TPu75 O-126 BD138 BO241C BO 241 A bo 135 transistor ESM 30 LF amplifier 2N2197 2N2196 bc 303 transistor ESM 304 100 bd 135 PDF

    bc 301 transistor

    Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP


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    BSX52 BSW21 BSW22 BSX51 BSW22 2N706 bc 301 transistor bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56 PDF

    2N6678

    Abstract: transformerless inverter 2N6676 2N6677 DO820
    Text: Series 2N6676, 2N6677, 2N6678 High Voltage NPN Transistors 15 Amperes • 400 Volts FEA TURES • High Voltage Rating— 400 Volts • Glass Passivation • Superior Resistance to Thermal Fatigue • Industrial and Military Applications APPLICATIONS • Switching Regulators


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    2N6676, 2N6677 2N6678 2N6677, 2N6678 transformerless inverter 2N6676 DO820 PDF

    emetteur

    Abstract: 2N3441 BDY72 3441 V560 2n 3441
    Text: *2 I\I 3441 *B D Y 7 2 NPN òlLICON TRANSISTORS, HOMOBASES T R A N S IS TO R S N P N S IL IC IU M , HO M O B A SE S 2N 3441 compì, of BDX 16 ^ Preferred device D is p o s itif recommandé LF large signal power amplification 140 V (120 V 3A CEO Am plification B F grands signaux de puissance


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    BDY72 Ali20 CB-72 emetteur 2N3441 BDY72 3441 V560 2n 3441 PDF

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF

    2N2405

    Abstract: 2N1893 transistor KD 503 RCA-2N2405 kd 503 transistor TA2235A RCA-ZN1893 TA2235
    Text: G E SOLID STATE 3875081 □ 1 G E S O LI D S TAT E DE I 3Ö7SDÖ1 GD17CHE 5 | ~ 01E 17092 D -T -2 J-Z 3 _mgn-speea rower Transistors File N u m b e r 3 4 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p plic a tio n s


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    RCA-ZN1893 2N2405* RCA-2N2405 2N1893 2N2405 2N240S. transistor KD 503 kd 503 transistor TA2235A TA2235 PDF

    TMPT404

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS 8514019 SPRAGUE. INC =53 D • G5DM33Ö 0D03b07 b ■ A L GR SE M IC O N DS /I C S SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type Marking BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D


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    G5DM33Ö 0D03b07 BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW67A BCW67B TMPT404 PDF

    TMPT404

    Abstract: No abstract text available
    Text: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A


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    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


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    CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756 PDF

    2sd 5023

    Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945 PDF

    2sd 5023

    Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
    Text: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1


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    13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345 PDF

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


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    2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224 PDF