2MBIT EPROM Search Results

pin diagram of ic 6116

Abstract: pin DIAGRAM OF IC 7474 ACER LABORATORIES INC M8720 flash 32 Pin PLCC 2mbit IC 7474 pin configuration Acer Laboratories 7474 ic pin configuration EPROM 27020 acer
Contextual Info: Acer Laboratories Inc. -Proprietary, Confidential, Preliminary- Product Brief M8720 : 2Mbit 256Kx8 MTP Flash Memory M8720 : 2 Mbit (256Kx8) MTP Flash Memory (5 Program/Erase Cycles) Features General Description ! High performance 90ns read access time !

39LV010

Abstract: 39lv512 PM39LV010-70VCE 39LV020 pm39lv512-70vce PM39LV512-70JCE PM39LV040-70JCE PM39LV040-70VC S5580 PM39LV010-70JCE
Contextual Info: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification

Contextual Info: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification

PMC 39LV040

Abstract: 39lv512 39lv040 PM39LV512 PM39LV010-70VCE PM39LV040 39LV010 Programmable Microelectronics 11000H 70Vce
Contextual Info: PMC Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification

Contextual Info: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification

ISC PSD834F2

Abstract: PSDSOFT EXPRESS
Contextual Info: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■

68HC11

Abstract: 80C251 80C31 PLCC52 PQFP52 PSD833F2 PSD834F2 PSD853F2 PSD854F2
Contextual Info: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■

PSD8XXFX

Abstract: AN1153 68HC11 80C251 80C31 PLCC52 PQFP52 PSD834F2 PSD85XF2
Contextual Info: PSD81XFX, PSD83XF2, PSD85XF2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5V±10% SINGLS SUPPLY VOLTAGE ■ UP TO 2Mbit OF PRIMARY FLASH MEMORY (8 UNIFORM SECTORS, 32K x 8) ■ UP TO 256Kbit SECONDARY FLASH

IMCS 700

Abstract: PLCC52 PQFP52 PSD813F2 PSD813F3 PSD813F4 PSD813F5 PSD833F2 PSD834F2 PSD853F2
Contextual Info: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5 V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■

Contextual Info: IS25CD512/010 & IS25LD020 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V – 3.60 V 512Kbit / 1Mbit 2.30 V – 3.60 V (2Mbit)

AD1033

Contextual Info: PSD813F2/3/4/5, PSD833F2 PSD834F2, PSD853F2, PSD854F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5 V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■

68HC11

Abstract: 80C251 80C31 PLCC52 PQFP52 PSD834F2 PSD8XXFX
Contextual Info: PSD81XFX, PSD83XF2, PSD85XF2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • 5V±10% Single Supply Voltage ■ Up to 2Mbit of Primary Flash Memory (8 uniform sectors, 32K x 8) ■ Up to 256Kbit Secondary Flash Memory (4

eproms

Contextual Info: Features • Fast read access time – 55ns • Low-power CMOS operation • • • • • • • • • – 100µA max standby – 40mA max active at 5MHz JEDEC standard packages – 40-lead PDIP – 44-lead PLCC Direct upgrade from 512Kbit, 1Mbit, and 2Mbit

Contextual Info: Features • Fast read access time – 55ns • Low-power CMOS operation • • • • • • • • • – 100µA max standby – 40mA max active at 5MHz JEDEC standard packages – 40-lead PDIP – 44-lead PLCC Direct upgrade from 512Kbit, 1Mbit, and 2Mbit

18XXXh

Contextual Info: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.

W39L020

Contextual Info: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.

2Axxx

Contextual Info: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7−DQ0.

AT45D321

Abstract: TbA 2025 ATMCU00100 AT8051 AT27LV520 AT27BV4096 AT27BV512 AT27BV800 AT27BV010 AT27BV020
Contextual Info: R PRODUCT GUIDE October 1998 EPROMs Part Number Organization Speeds Description Availability Battery-Voltage 2.7V to 3.6V AT27BV256 32K x 8 70-150 ns 256K-bit, 2.7-Volt to 3.6-Volt EPROM AT27BV512 64K x 8 70-150 ns 512K-bit, 2.7-Volt to 3.6-Volt EPROM

rfid cards with AT89c2051 ic

Abstract: sram 5volt 4m AT45DB041 AT29C020 MCU00100 AT27BV020 AT27BV040 AT27BV1024 AT27BV256 AT27BV400
Contextual Info: PRODUCT GUIDE April 1998 EPROMs Part Number Organization Speeds Description Availability Battery-Voltage 2.7V to 3.6V AT27BV256 32K x 8 70-150 ns 256K bit, 2.7-Volt to 3.6-Volt EPROM Now AT27BV512 64K x 8 70-150 ns 512K bit, 2.7-Volt to 3.6-Volt EPROM

C1157

Abstract: 74HCU04 MSM9800 MSM9805 EPROM 28 PINS "Piezo Speaker" Amplifier
Contextual Info: E2D0107-19-93 ¡ Semiconductor MSM9800 EVA BOARD ¡ Semiconductor This version:EVA Sep. 1999 MSM9800 BOARD Voice ROM Evaluation Board For MSM9802/9803/9805 GENERAL DESCRIPTION The MSM9800 EVA BOARD is an EPROM Evaluation board that enables the user to evaluate

intel 28F200

Abstract: 56-Lead TSOP Package E28F200CVB60 e28f200cv-b60 29053 TB28F200BVT80
Contextual Info: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology  5V or 12V Program/Erase  3.3V or 5V Read Operation  Increased Programming Throughput at 12V VPP

28F002BV-T

Abstract: 28F200BV-T 28F200CV-T E28F200CVB60
Contextual Info: 2-MBIT 128K X 16 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T B 28F200CV-T B 28F002BV-T B Y Y Y Y Y Y Y Y Y Intel SmartVoltage Technology 5V or 12V Program Erase 3 3V or 5V Read Operation Increased Programming Throughput at 12V VPP Very High-Performance Read

Contextual Info: iir tls J W W C T [p ^l¥0i 2-MBIT (128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at

Contextual Info: P I H i@ y T 1F [ ^ 1 ¥ D 0 in te l 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at