2IY TRANSISTOR Search Results

2IY TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

2IY TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
analog multiplier MC1496 Abstract: AN531 MC1496 balanced modulator MC1496 operation theory application note AN489 AN489 Analysis and Basic Operation of the MC1595 MC1496 application note AN489 MC1496 AN531 MC1595 Text: AN531/D MC1496 Balanced Modulator Prepared by: Roy Hejhall Applications Engineering http://onsemi.com APPLICATION NOTE MC1496 General Description Figure 1 shows a schematic diagram of the MC1496. For purposes of the analysis, the following conventional assumptions have been made for simplification: 1 Devices	Original	AN531/D MC1496 MC1496. r14525 analog multiplier MC1496 AN531 MC1496 balanced modulator MC1496 operation theory application note AN489 AN489 Analysis and Basic Operation of the MC1595 MC1496 application note AN489 AN531 MC1595	PDF
Untitled Abstract: No abstract text available Text: h 7 > y ^ ^ / T ransistors 2SB1066M /2SB1243 2 S B 1 0 6 6 M ^ ^ ^ ^ u - ^ p n p h 7 >vx^ O C R I O d 1 4J ^ * i'tiffl/M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistors • 9\Hi'rfiig l/D im e n s io n s U n it: mm) 1) V cE (sat)= —0.5V(Typ.)	OCR Scan	2SB1066M /2SB1243 2SD1507M/2SD1864 2SD1507 --40V --10V, 2SB1243 2SB1066M/2SB1243	PDF
2sb1237 Abstract: No abstract text available Text: ROHM 4GE CO L T D D • TflS ûW \|Q 9 M S B1RHI1 2SB909M/2SB1237 7 = 2 7 -2 J h 7 > V ^ 5 / T ransistors " 2S! DÜ QS S 0 3 1 77 ^ ^ U“ ^ PNP V U a > K 7 > V 7 ^ /M edium Power Amp. Epitaxial Planar PNP Silicon Transistors ' ÿ f-J f^ ^ H /D im e n s io n s Unit : mm	OCR Scan	2SB909M/2SB1237 2SD1225M/2SD1858 2SD1225M, 2SD1858. 2sb1237	PDF
2iy transistor Abstract: 2SD1227M Text: h -? > v $ /Transistors 2SD1227M/2SD1862 2SD1227M 2SD1862 Xk°2'>7^7°U-tfêNPN y bÿ>v$ Epitaxil Planar NPN Silicon Transistor /Medium Power Amp. • £1-Jfi'+;£Eil/Dimensions Unit : mm 1) P c = l W i: ± # i'„ 2SD1227M 2SD1862 r 2.5 ± 0.2 6.8 i 0.2	OCR Scan	2SD1227M/2SD1862 2SD1227M 2SD1862 2SD1227M 2SB911M SC-71 2iy transistor	PDF