2GM TRANSISTOR 6 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES  General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2gm transistor

Abstract: ota amplifier Modulation using OTA AB-180 OPA622 OPA660
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

NPN/transistor C 331

Abstract: vacuum tubes AB-180 OPA622 OPA660 ota ic
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage VCBO : MMBTA55: -60 V

2GM sot-23 transistor

Abstract: transistor MARKING 560 pnp sot23 TS560 marking 2GM 2GM TRANSISTOR
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES t PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. t As complementary type, the NPN transistor MMBTA06 is recommended. t This transistor is also available in the

2gm transistor

Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot-23 transistor 2GM sot marking code 2GM marking 2GM marking codes sot-23 2GM 20FEB02
Contextual Info: MMBTA56 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector

2gm transistor

Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 2GM sot MPSA56 MMBTA06 MMBTA56 2GM sot-23 transistor 20FEB02
Contextual Info: MMBTA56 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector

2gm transistor

Abstract: marking 2GM "MARKING CODE 2GM" 2GM sot PNP Epitaxial Silicon Transistor sot-23 MMBTA06 MMBTA56 MPSA56 marking code 2GM SOT 23
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) ♦ This transistor is also available in the

2GM sot-23 transistor

Abstract: a56 transistor 2GM H transistor 2GM surface transistor 2GM sot 2gm transistor transistor A56 MMBTA55 2H SOT23 marking code 2GM SOT 23
Contextual Info: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN types available MMBTA55/A56 Pb Lead-free MMBTA05/MMBTA06 APPLICATIONS z Ideal for medium NPN amplification and switching.

transistor tic 2250

Contextual Info: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBTA55LT1 transistor pnp MMBTA56LT1 FEATURES Power dissipation PCM : 0.225 Collector current Icm : -0. 5 Collector base voltage W (Tamb=25 °C) A : MMBTA55: -60 V MMBTA56: -80 V Operating and storage junction temperature range

MPSa56 equivalent

Abstract: transistor MARKING 560 pnp sot23 2gm transistor
Contextual Info: MMBTA56 Small Signal Transistor PNP TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 t c u rod P New .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) max. .004 (0.1)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA55LT1 MMBTA56LT1 TRANSISTOR（ PNP ） SOT—23 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.225 W（Tamb=25℃） Collector current

2GM H transistor

Abstract: 2GM TRANSISTOR transistor marking SA p sot-23
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA56 Small Signal Transistors PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 Ì3.1Ì .118 (3.0) .016 (0.4) Top View ♦ As complementary type, the NPN

DTD123TD

Abstract: 2gm transistor
Contextual Info: Transistors Digital transistors built-in resistors DTD123TK/DTD123TS •F e a tu re s 1) ►External dim ensions (Units: mm) B uilt-in b ia s re s is to rs e n a b le the configuration of an inverter circuit DTD123TK 2 .9 ± 0.2 1 .9 ± 0.2 w ithout con necting external input

IN6263

Abstract: AGC OPA660 R2M 45 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 sbos007
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

AGC OPA660

Abstract: in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

2gm marking

Abstract: TRANSISTOR marking code vishay
Contextual Info: MMBTA56 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBTA06 is recommended. • This transistor is also available in the TO-92 case

2N2907

Abstract: OPA1013 OPA660 OPA660AP OPA660AU REF200 BUF601
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

in6263

Abstract: coil gold detector circuit diagram OPA660 R2M diode transconductance amplifier spice OPA660AU REF200 2N2907 BUF601 OPA1013
Contextual Info: OPA 660 OPA660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● HIGH SLEW RATE: 3000V/µs ● VIDEO/BROADCAST EQUIPMENT ● COMMUNICATIONS EQUIPMENT ● LOW DIFFERENTIAL GAIN/PHASE

Contextual Info: MMBTA56 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W(Tamb=25OC) * Collector current ICM : -0.5 A * Collector-base voltage VCBO : -80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23

opa1013 equivalent

Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

in6263

Abstract: BUF601
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

2GM transistor

Abstract: MMBTA56
Contextual Info: MMBTA56 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.225 W(Tamb=25OC) * Collector current ICM : -0.5 A * Collector-base voltage VCBO : -80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23

SOT-23

Abstract: 2GM sot-23 transistor FMBTA56
Contextual Info: Formosa MS Driver Transistor FMBTA55 / FMBTA56 List List. 1 Package outline. 2 Features. 2