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    2F TRANSISTOR SOT23 Search Results

    2F TRANSISTOR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    2F TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F


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    PDF OT-23 MMBT2907A OT-23 MMBT2222A) -500mA -150mA -15mA -500mA -50mA

    marking 2f 3

    Abstract: MMBT2222A MMBT2907A marking 2f
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR


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    PDF OT-23 MMBT2907A MMBT2222A) -10mA -500mA -150mA -15mA -500mA -50mA marking 2f 3 MMBT2222A MMBT2907A marking 2f

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR


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    PDF OT-23 MMBT2907A OT-23 MMBT2222A) Temperature-10V -10mA -500mA -150mA -15mA -500mA

    2SA1037KGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)


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    PDF 2SA1037KGP OT-23) OT-23 150mW 120mW 2SA1037KGP

    2F PNP SOT23

    Abstract: marking 2f 2f transistor SOt23
    Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)


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    PDF MMBT2907A OT-23 OT-23 MMBT2222A) -150mA -15mA -10mA -500mA 2F PNP SOT23 marking 2f 2f transistor SOt23

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


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    PDF MMBT2907A MMBT2907A OT-23 QW-R206-030

    pnp 2f

    Abstract: No abstract text available
    Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


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    PDF MMBT2907A MMBT2907A OT-23 QW-R206-030 pnp 2f

    5P sot23

    Abstract: FMMT2907 FMMT2907AR 2F PNP SOT23 FMMT2907A FMMT2907R FMMT2222 FMMT2222A DSA003691
    Text: FMMT2907 FMMT2907A SWITCHING CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER FMMT2907 FMMT2907A SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR SYMBOL FMMT2907 FMMT2907A TYP. TYP. MAX. UNIT CONDITIONS. MAX. Output Capacitance Cobo 8 8 pF


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    PDF FMMT2907 FMMT2907A 100KHz -150mA, -15mA 5P sot23 FMMT2907 FMMT2907AR 2F PNP SOT23 FMMT2907A FMMT2907R FMMT2222 FMMT2222A DSA003691

    Untitled

    Abstract: No abstract text available
    Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


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    PDF MMBT2907A 350mW, OT-23 MIL-STD-202,

    a10 transistor

    Abstract: marking code 2f MMBT2907A sot 23 marking code NT MARKING NT SOT23
    Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


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    PDF MMBT2907A 350mW, OT-23 MIL-STD-202, a10 transistor marking code 2f MMBT2907A sot 23 marking code NT MARKING NT SOT23

    PNP marking NY sot-223

    Abstract: TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to Dissipation Bandwidh No. Emitter Collector Current DC Current Gain


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    PDF CHTA64X CHT3906X CHT2907X CHT4033X CHT5401X CHTA92X CHTA64Z CHT3906Z CHT2907Z CHT2955Z PNP marking NY sot-223 TRANSISTOR S2A 2F PNP SOT23 2SA1036K s2A SOT23 marking NY sot-223 transistors sot-223 transistor circuit s2A PART MARKING SOT-23 TRANSISTOR CH3906

    Untitled

    Abstract: No abstract text available
    Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalHigh-Current Gain Bandwidth Product fT : purpose amplifier or switch in applications that require


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    PDF PN2907A MMBT2907A PZT2907A PN2907A, MMBT2907A, PZT2907A OT-223) PN2222A, MMBT2222A,

    K2F TRANSISTOR

    Abstract: MMBT2907A-13 C2F marking SOT23
    Text: MMBT2907A 60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT2222A Ideal for Low Power Amplification and Switching


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    PDF MMBT2907A MMBT2222A) AEC-Q101 J-STD-020 DS30040 K2F TRANSISTOR MMBT2907A-13 C2F marking SOT23

    sot-23 Marking 2F

    Abstract: No abstract text available
    Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Product Features SOT-23 ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant


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    PDF MMBT2907A 350mW, OT-23 MIL-STD-202, C/10s sot-23 Marking 2F

    Untitled

    Abstract: No abstract text available
    Text: LMR14203 www.ti.com SNVS732C – OCTOBER 2011 – REVISED APRIL 2013 LMR14203 SIMPLE SWITCHER 42Vin, 0.3A Step-Down Voltage Regulator in SOT-23 Check for Samples: LMR14203 FEATURES DESCRIPTION • • • • • • • • • • The LMR14203 is a PWM DC/DC buck step-down


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    PDF LMR14203 SNVS732C LMR14203 42Vin, OT-23 V-42V,

    CHT2907AGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2907AGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 60 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=60V . * High saturation current capability.


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    PDF CHT2907AGP OT-23 OT-23) 600mA) -15mA; CHT2907AGP

    smd transistor 2f

    Abstract: smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 26 smd transistor marking 26 SMD CODE TRANSISTOR JA MARKING SMD PNP TRANSISTOR R TRANSISTOR SMD MARKING CODE 2F 2f smd transistor transistor SMD 2f 2f pnp smd transistor
    Text: SMD General Purpose Transistor PNP MMBT2907A SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


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    PDF MMBT2907A OT-23 OT-23, MIL-STD-202G, smd transistor 2f smd TRANSISTOR code marking 2F TRANSISTOR SMD MARKING CODE 26 smd transistor marking 26 SMD CODE TRANSISTOR JA MARKING SMD PNP TRANSISTOR R TRANSISTOR SMD MARKING CODE 2F 2f smd transistor transistor SMD 2f 2f pnp smd transistor

    smd TRANSISTOR code marking 2F

    Abstract: transistor pnp 20v, 2.5a smd
    Text: SMD GENERAL PURPOSE TRANSISTOR PNP MMBT2907A SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208


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    PDF MMBT2907A OT-23, OT-23 MIL-STD-202G, smd TRANSISTOR code marking 2F transistor pnp 20v, 2.5a smd

    transistor c-111

    Abstract: TRANSISTOR 111
    Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a genHigh-Current Gain Bandwidth Product fT : eral-purpose amplifier or switch in applications that


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    PDF PN2907A MMBT2907A PZT2907A PN2907A, MMBT2907A, PZT2907A OT-223) PN2222A, MMBT2222A, transistor c-111 TRANSISTOR 111

    LDO sot23

    Abstract: APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181
    Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: pass transistor, linear regulator, LDO, increase LDO current, more load current Jan 24, 2003 APPLICATION NOTE 1861 Pass Transistor Boosts Current from Negative Linear Regulator Abstract: The addition of a pass transistor to the circuit of Figure 1 allows the linear regulator LDO to deliver


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    PDF com/an1861 MAX1735: AN1861, APP1861, Appnote1861, LDO sot23 APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181

    2F TRANSISTOR

    Abstract: MMBT2907A MPS2907A EQUIVALENT MPS2907A Marking Code 2F
    Text: MMBT2907A Small Signal Transistor PNP t c u rod P New TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 0.037 (0.95) 0.037 (0.95)


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    PDF MMBT2907A O-236AB OT-23) OT-23 E8/10K 200ns 2F TRANSISTOR MMBT2907A MPS2907A EQUIVALENT MPS2907A Marking Code 2F

    PN2907A

    Abstract: PN2222A/2907A
    Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Features Description • High DC Current Gain hFE Range: 100 – 300 The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that


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    PDF PN2907A MMBT2907A PZT2907A PN2907A, MMBT2907A, PZT2907A OT-223) OT-223 PZT2907A) PN2222A/2907A

    Untitled

    Abstract: No abstract text available
    Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA


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    PDF 350mA 380MHz 650MHz 600MHz 200mA 300MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: cP > G en eral v S e m ic o n d u c t o r MMBT2907A Small Signal Transistor PNP % TO-236AB (SOT-23) Mounting Pad Layout I— 0.037 (0.95)— j 0.037 .0 3 (0.95) " i~ r 0.079 (2.0) 0.035 (0.9) t H 0.031 (0.8) Features_ Mechanical Data_


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    PDF MMBT2907A O-236AB OT-23) MPS2907A. OT-23 E8/10K 30K/box 30K/box 150mA